MMBTA42 / MMBTA43
NPN Silicon High Voltage Transistors
for high voltage switching and amplifier applications.
TO-236 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature Range
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 10 V, I
C
= 1 mA
at V
CE
= 10 V, I
C
= 10 mA
at V
CE
= 10 V, I
C
= 30 mA
Collector Base Cutoff Current
at V
CB
= 200 V
at V
CB
= 160 V
Emitter Base Cutoff Current
at V
EB
= 6 V
at V
EB
= 4 V
Collector Base Breakdown Voltage
at I
C
= 100 µA
Collector Emitter Breakdown Voltage
at I
C
= 1 mA
Emitter Base Breakdown Voltage
at I
E
= 100 µA
Collector Emitter Saturation Voltage
at I
C
= 20 mA, I
B
= 2 mA
Base Emitter Saturation Voltage
at I
C
= 20 mA, I
B
= 2 mA
Gain Bandwidth Product
at V
CE
= 20 V, I
C
= 10 mA, f = 100 MHz
Collector Output Capacitance
at V
CB
= 20 V, f = 1 MHz
MMBTA42
MMBTA43
MMBTA42
MMBTA43
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
R
θJA
T
j
, T
stg
Value
300
200
300
200
6
500
350
357
- 55 to + 150
Unit
V
V
V
mA
mW
O
C/W
O
C
Symbol
h
FE
h
FE
h
FE
MMBTA42
MMBTA43
MMBTA42
MMBTA43
MMBTA42
MMBTA43
MMBTA42
MMBTA43
I
CBO
I
CBO
I
EBO
I
EBO
V
(BR)CBO
V
(BR)CBO
V
(BR)CEO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
f
T
MMBTA42
MMBTA43
C
ob
Min.
25
80
40
-
-
-
-
300
200
300
200
6
-
-
50
-
-
Max.
-
200
-
0.1
0.1
0.1
0.1
-
-
-
-
-
0.5
0.9
-
3
4
Unit
-
-
-
µA
µA
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated : 16/03/2015
Rev:01
MMBTA42 / MMBTA43
120
h
FE
, DC Current Gain
100
80
60
40
T
J
=+125°C
V
CE
=10Vdc
T
J
=25°C
T
J
=-55°C
20
0
0.1
1.0
10
100
I
C
, Collector Current (mA)
Figure 1. DC Current Gain
tT, Current-Gain-Bandwidth (MHz)
C, Capacitance (pF)
100
C
eb
@ 1MHz
80
70
60
50
40
30
20
10
1.0
2.0
3.0
5.0 7.0
10
20
30
50 70 100
V
CE
=20V
f=20MHz
T
J
=20°C
10
1
C
cb
@ 1MHz
0.1
0.1
1
10
100
1000
V
R
, Reverse Voltage (volts)
Figure 2. Capacitance
Ic, Collector Current (mA)
Figure 3. Current-Gain-Bandwidth
1.4
1.2
A
V
BE
(sat) @-55°C, I
C
/I
B
=10
B
V
BE
(on) @ -55°C,V
CE
=10V
C
V
BE
(sat) @ 125°C,I
C
/I
B
=10
D
V
BE
(sat) @ 25°C,I
C
/I
B
=10
E
V
BE
(on) @ 125°C,V
CE
=10V
F
V
BE
(on) @ 25°C,V
CE
=10V
G
V
CE
(sat) @ 125°C,I
C
/I
B
=10
H
V
CE
(sat) @ 25°C,I
C
/I
B
=10
I
V
CE
(sat) @ -55°C,I
C
/I
B
=10
0.1
1.0
10
100
V, Voltage (volts)
1.0
0.8
0.6
0.4
0.2
0.0
I
C
, Collector Current (mA)
Figure 4."on" Voltages
SEMTECH ELECTRONICS LTD.
®
Dated : 16/03/2015
Rev:01
详细参数
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