1N5817 THRU 1N5819
SCHOTTKY BARRIER RECTIFIERS
Features
• Metal silicon junction, majority carrier conduction
• Guarding for overvoltage protection
• Low power loss, high efficiency
• High current capability
• low forward voltage drop
• High surge capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Mechanical Data
•
Case: Molded plastic, DO-41
Maximum Ratings and Electrical Characteristics
Ratings at 25
O
C ambient temperature unless otherwise specified.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375" (9.5 mm) Lead Length at T
L
= 90
O
C
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
Superimposed On Rated Load (JEDEC method) at T
L
= 70
O
C
Maximum Instantaneous Forward Voltage at 1 A
Maximum Instantaneous Forward Voltage at 3.1 A
Maximum Instantaneous Reverse Current at
Rated DC Reverse Voltage
Typical Thermal Resistance
Typical Junction Capacitance
Storage and Operating Junction Temperature Range
S
®
H
C
E
T
M
E
Dimensions in mm
Symbols
V
RRM
V
RMS
V
DC
I
(AV)
1N5817
20
14
1N5818
30
21
30
1
1N5819
40
28
Units
V
V
V
20
40
A
I
FSM
V
F
I
R
25
A
0.45
0.75
0.55
0.875
1
10
50
15
0.6
0.9
V
T
A
= 25
O
C
T
A
= 100
O
C
mA
R
θJA
R
θJL
C
J
T
j
,T
stg
O
C/W
pF
O
110
- 65 to + 125
C
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
Dated : 11/11/2008
1N5817 THRU 1N5819
FIG.1-FORWARD CURRENT DERATING CURVE
Fig.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
30
25
20
15
10
5
0
1
10
100
T
J
=T
J
max.
8.3ms SINGLE HALF
SINE-WAVE
(JEDEC Method)
1
0.75
0.5
0.25
0
0
20
40
60
RESISTIVE OR
INDUCTIVE LOAD
0.375" (9.5mm)
LEAD LENGTH
LEAD TEMPERATURE, ( C)
Fig.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT
AMPERES
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
50
10
Tj=125 C
1
0.1
0.01
0
TRANSIENT THERMAL IMPEDANCE, C/W
JUNCTION CAPACITANCE,pF
S
400
100
10
0.1
INSTANTANEOUS FORWARD VOLTAGE
VOLTS
Fig.5- TYPICAL JUNCTION CAPACITANCE
H
C
E
T
M
E
80
100
120
140
NUMBER OF CYCLES AT 60 Hz
o
Fig.4- TYPICAL REVERSE CHARACTERISTICS
100
10
o
Pulse Width=300 S
1% Duty Cycle
1
T
J
=125
o
C
Tj=25 C
o
0
T
J
=75 C
o
0.01
T
J
=25 C
o
0.2 0.4
0.6
0.8
1.0 1.2 1.4
1.6
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE,%
Fig.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
100
o
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
o
10
1
1
10
100
0.1
0.01
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
t, PULSE DURATION,sec.
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated : 11/11/2008
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