2SA1015
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into three groups, O, Y
and G, L , according to its DC current gain. As
complementary type the NPN transistor
2SC1815 is recommended.
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
-I
B
P
tot
T
j
T
stg
Value
50
50
5
150
50
400
150
- 55 to + 150
Unit
V
V
V
mA
mA
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 6 V, -I
C
= 2 mA
Current Gain Group O
Y
G
L
at -V
CE
= 6 V, -I
C
= 150 mA
Collector Base Breakdown Voltage
at -I
C
= 100 µA
Collector Emitter Breakdown Voltage
at -I
C
= 10 mA
Emitter Base Breakdown Voltage
at -I
E
= 10 µA
Collector Base Cutoff Current
at -V
CB
= 50 V
Emitter Cutoff Current
at -V
EB
= 5 V
Collector Emitter Saturation Voltage
at -I
C
= 100 mA, -I
B
= 10 mA
Base Emitter Saturation Voltage
at -I
C
= 100 mA, -I
B
= 10 mA
Gain Bandwidth Product
at -V
CE
= 10 V, -I
C
= 1 mA
Output Capacitance
at -V
CB
= 10 V, f = 1 MHz
Symbol
h
FE
h
FE
h
FE
h
FE
h
FE
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
-I
CBO
-I
EBO
-V
CE(sat)
-V
BE(sat)
f
T
C
OB
Min.
70
120
200
350
25
50
50
5
-
-
-
-
80
-
Max.
140
240
400
700
-
-
-
-
0.1
0.1
0.3
1.1
-
7
Unit
-
-
-
-
-
V
V
V
µA
µA
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated : 17/08/2016
Rev:01
汽车电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
