BC846…BC850
NPN Silicon Epitaxial Transistor
for switching and amplifier applications
As complementary types the PNP transistors
BC856...BC860 is recommended.
TO-236 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
BC846
BC847, BC850
BC848, BC849
BC846
BC847, BC850
BC848, BC849
BC846, BC847
BC848, BC849, BC850
Symbol
V
CBO
V
CBO
V
CBO
V
CEO
V
CEO
V
CEO
V
EBO
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
Value
80
50
30
65
45
30
6
5
100
200
300
150
- 65 to + 150
Unit
V
V
V
V
V
V
V
V
mA
mA
mW
O
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
C
C
O
SEMTECH ELECTRONICS LTD.
®
Dated
：
27/04/2016 Rev
：
03
BC846…BC850
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 5 V, I
C
= 2 mA
Current Gain Group A
B
C
Symbol
h
FE
h
FE
h
FE
I
CBO
BC846
BC847, BC850
BC848, BC849
BC846
BC847, BC850
BC848, BC849
BC846, BC847
BC848,BC849,BC850
Min.
110
200
420
-
80
50
30
65
45
30
6
5
-
-
580
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
300
-
9
Max.
220
450
800
15
-
-
-
-
-
-
-
-
250
600
700
720
-
6
-
Unit
-
-
-
nA
V
V
V
V
V
V
V
V
mV
mV
mV
mV
MHz
pF
pF
Collector Base Cutoff Current
at V
CB
= 30 V
Collector Base Breakdown Voltage
at I
C
= 100 µA
V
(BR)CBO
V
(BR)CBO
V
(BR)CBO
V
(BR)CEO
V
(BR)CEO
V
(BR)CEO
V
(BR)EBO
V
(BR)EBO
V
CEsat
V
CEsat
V
BE(on)
V
BE(on)
f
T
C
ob
C
ib
Collector Emitter Breakdown Voltage
at I
C
= 2 mA
Collector Emitter Breakdown Voltage
at I
C
= 100 µA
Collector Emitter Saturation Voltage
at I
C
= 10 mA, I
B
= 0.5 mA
at I
C
= 100 mA, I
B
= 5 mA
Base Emitter On Voltage
at V
CE
= 5 V, I
C
= 2 mA
at V
CE
= 5 V, I
C
= 10 mA
Transition Frequency
at V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
Output Capacitance
at V
CB
= 10 V, f = 1 MHz
Input Capacitance
at V
EB
= 0.5 V, f = 1 MHz
SEMTECH ELECTRONICS LTD.
®
Dated
：
27/04/2016 Rev
：
03
BC846…BC850
STATIC CHARACTERISTIC
100
I
C
(mA),COLLECTOR CURRENT
I
C
(mA),COLLECTOR CURRENT
BASE-EMITTER ON VOLTAGE
100
80
I
B
=400 A
I
B
=350 A
I
B
=300 A
I
B
=250 A
I
B
=200 A
V
CE
=2V
10
60
40
I
B
=150 A
I
B
=100 A
1
20
I
B
=50 A
0.1
0
0
4
8
12
16
20
V
BE
(V),BASE-EMITTER VOLTAGE
V
CE
(V),COLLECTOR-EMITTER VOLTAGE
0.2
0.4
0.6
0.8
1.0
1.2
10000
V
CE
=5V
h
FE
DC CURRENT GAIN
f
T
(MHz), CURRENT GAIN-BANDWIDTH PRODUCT
DC CURRENT GAIN
CURRENT GAIN BANDWIDTH PRODUCT
1000
V
CE
=5V
1000
100
100
10
10
1
10
100
1000
I
C
(mA),COLLECTOR CURRENT
1
0.1
1
10
100
I
C
(mA),COLLECTOR CURRENT
V
BE(sat)
,V
CE(sat)
,(V) SATURATION VOLTAGE
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
10000
I
C
=10I
B
Cob(pF), CAPACITANCE
COLLECTOR OUTPUT CAPACITANCE
100
f=1MHz
1000
V
BE(sat)
10
100
1
V
CE(sat)
10
1
10
100
1000
0.1
1
10
100
1000
V
CB
(V),COLLECTOR-BASE VOLTAGE
I
C
(mA),COLLECTOR CURRENT
SEMTECH ELECTRONICS LTD.
®
Dated
：
27/04/2016 Rev
：
03
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