MMBT7002
N-Channel Enhancement Mode Field Effect Transistor
Features
• High density cell design for low R
DS(ON)
• Voltage controlled small signal switching
• High saturation current capability
• High speed switching
Drain
Gate
Source
1.Gate 2.Source 3.Drain
TO-236 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R
GS
1MΩ)
Gate-Source Voltage
-Continuous
-Non Repetitive (tp < 50 µs)
Symbol
V
DSS
V
DGR
V
GSS
I
D
P
tot
T
J
, T
stg
Value
60
60
± 20
± 40
115
800
200
- 55 to + 150
Unit
V
V
V
mA
mW
O
Maximum Drain Current -Continuous
-Pulsed
Total Power Dissipation
Operating and Storage Temperature Range
C
Characteristics at T
a
= 25
O
C
Parameter
Drain Source Breakdown Voltage
at I
D
= 10 µA
Zero Gate Voltage Drain Current
at V
DS
= 60 V
Gate-Body Leakage Current
at V
GS
= ± 20 V
Gate Threshold Voltage
at V
DS
= V
GS
, I
D
= 250 µA
On-State Drain Current
at V
GS
= 10 V, V
DS
= 7.5 V
Drain-Source On-Voltage
at V
GS
= 10 V, I
D
= 500 mA
at V
GS
= 5 V, I
D
= 50 mA
Static Drain-Source On-Resistance
at V
GS
= 10 V, I
D
= 500 mA
Forward Transconductance
at V
DS
= 10 V, I
D
= 200 mA
Input Capacitance
at V
DS
= 25 V, f = 1 MHz
Output Capacitance
at V
DS
= 25 V, f = 1 MHz
Reverse Transfer Capacitance
at V
DS
= 25 V, f = 1 MHz
Turn-On Time
at V
DD
= 30 V, R
L
= 150
Ω,
I
D
= 0.2 A, V
GS
= 10V, R
GEN
= 25Ω
Turn-Off Time
at V
DD
= 30 V, R
L
= 150
Ω,
I
D
= 0.2 A, V
GS
= 10V, R
GEN
= 25Ω
Symbol
BV
DSS
I
DSS
±I
GSS
V
GS(th)
I
D(ON)
V
DS(ON)
R
DS(ON)
g
FS
C
iss
C
oss
C
rss
t
on
t
off
Min.
60
-
-
1
500
-
-
-
80
-
-
-
-
-
Max.
-
1
100
2.5
-
3.75
1.5
7.5
-
50
25
5
20
20
Unit
V
µA
nA
V
mA
V
V
Ω
mS
pF
pF
pF
ns
ns
SEMTECH ELECTRONICS LTD.
®
Dated: 16/03/2015 Rev:01
嵌入式系统
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