BC817 / BC818
NPN Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier application,
These transistors are subdivided into three groups
-16, -25, -40 according to their current gain.
As complementary types, the PNP transistors
BC807 and BC808 are recommended.
TO-236 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
BC817
BC818
BC817
BC818
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
50
30
45
25
5
500
300
150
- 55 to + 150
Unit
V
V
V
mA
mW
O
C
C
O
Electrical Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 1 V, I
C
= 100 mA
at V
CE
= 1 V, I
C
= 500 mA
Collector Base Cutoff Current
at V
CB
= 20 V
Emitter Base Cutoff Current
at V
EB
= 5 V
Collector Emitter Saturation Voltage
at I
C
= 500 mA, I
B
= 50 mA
Base Emitter Voltage
at I
C
= 500 mA, V
CE
= 1 V
Transition Frequency
at V
CE
= 5 V, I
C
= 10 mA, f = 50 MHz
Collector Base Capacitance
at V
CB
= 10 V, f = 1 MHz
Current Gain Group -16
-25
-40
Symbol
h
FE
h
FE
h
FE
h
FE
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
f
T
C
ob
Min.
100
160
250
40
-
-
-
-
100
-
Typ.
-
-
-
-
-
-
-
-
-
5
Max.
250
400
600
-
100
100
0.7
1.2
-
-
Unit
-
-
-
-
nA
nA
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated
：
16/03/2015 Rev
：
01
BC817 / BC818
500
Power Dissipation: Ptot (mW)
400
300
200
100
0
0
25
100
150
A m b ie n t T e m p e ra tu re : T a ( C )
O
200
P o w e r D e ra tin g C u rv e
SEMTECH ELECTRONICS LTD.
®
Dated
：
16/03/2015 Rev
：
01
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
