SS32D THRU SS3AD
SCHOTTKY BARRIER RECTIFIERS
Reverse Voltage - 20 to 100 V
Forward Current - 3 A
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Metal silicon junction, majority carrier conduction
• For surface mount applications
• Low power loss, high efficiency
• High current capability, low forward voltage drop.
• Low profile package
• Built-in strain relief, ideal for automated placement
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Mechanical Data
•
Case:
SMB (DO-214AA), molded plastic body
•
Terminals:
Solder plated, solderable per
MIL-STD-750, method 2026
•
Polarity:
Color band denotes cathode end
Absolute Maximum Ratings and Characteristics
Ratings at 25
o
C ambient temperature unless otherwise specified. Single phase, half wave, resistive or inductive
load. For capactive load, derate by 20 %.
Parameter
Symbols
SS32D SS33D SS34D SS35D SS36D SS38D SS3AD
V
RRM
V
RMS
V
DC
20
14
20
30
21
30
40
28
40
50
35
50
3
60
42
60
80
57
80
100
71
Units
V
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at 0.375"(9.5 mm) Lead Length
Peak Forward Surge Current 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC Method)
Maximum Instantaneous Forward Voltage at 3 A
Maximum Reverse Current at Rated
DC Blocking at Voltage
Typical Junction Capacitance
1)
Typical Thermal Resistance
2)
Operating Junction Temperature Range
Storage Temperature Range
1)
2)
S
®
H
C
E
T
M
E
V
100
V
I
F(AV)
A
I
FSM
V
F
I
R
C
j
R
θJA
R
θJL
T
j
T
stg
- 65 to + 125
80
A
0.55
20
250
55
17
- 65 to + 150
- 65 to + 150
0.75
0.85
V
at T
a
= 25
O
C
at T
a
= 100
O
C
1.5
10
160
O
mA
pF
C/W
O
C
C
O
Measured at 1 MHz and reverse voltage of 4 V
P.C.B. mounted 0.55 X 0.55" (14 X 14 mm) copper pad areas.
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
Dated
：
27/03/2012 J Rev
：
01
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
