MMBD914
Silicon Epitaxial Planar Switching Diode
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
1
3
2
Marking Code:
5D
TO-236 Plastic Package
Applications
• Ultra high speed switching application
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Reverse Voltage
Forward Current
Non-repetitive Peak Forward Surge Current (t = 1
μs)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
I
FSM
P
tot
T
j
T
stg
Value
100
200
4
350
150
- 55 to + 150
Unit
V
mA
A
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 10 mA
Reverse Breakdown Voltage
at I
R
= 100 µA
Reverse Current
at V
R
= 20 V
at V
R
= 75 V
Reverse Recovery Time
at I
F
= I
R
= 10 mA
Total Capacitance
at V
R
= 0 , f = 1 MHz
Symbol
V
F
V
(BR)R
I
R
t
rr
C
T
Min.
-
100
-
-
-
-
Max.
1
-
25
5
4
4
Unit
V
V
nA
µA
ns
pF
SEMTECH ELECTRONICS LTD.
®
Dated : 16/03/2015 Rev:01