MMBTA92 / MMBTA93
PNP Silicon High Voltage Transistors
for high voltage switching and amplifier applications.
TO-236 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 10 V, -I
C
= 1 mA
at -V
CE
= 10 V, -I
C
= 10 mA
at -V
CE
= 10 V, -I
C
= 30 mA
Collector Base Cutoff Current
at -V
CB
= 200 V
at -V
CB
= 160 V
Emitter Base Cutoff Current
at -V
EB
= 3 V
Collector Base Breakdown Voltage
at -I
C
= 100 µA
Collector Emitter Breakdown Voltage
at -I
C
= 1 mA
Emitter Base Breakdown Voltage
at -I
E
= 100 µA
Collector Emitter Saturation Voltage
at -I
C
= 20 mA, -I
B
= 2 mA
Base Emitter Saturation Voltage
at -I
C
= 20 mA, -I
B
= 2 mA
Current Gain Bandwidth Product
at -V
CE
= 20 V, -I
C
= 10 mA, f = 100 MHz
Collector Base Capacitance
at -V
CB
= 20 V, f = 1 MHz
MMBTA92
MMBTA93
MMBTA92
MMBTA93
MMBTA92
MMBTA93
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
P
tot
T
j
T
stg
Value
300
200
300
200
5
500
350
150
- 55 to + 150
Unit
V
V
V
mA
mW
O
C
C
O
Symbol
h
FE
h
FE
h
FE
-I
CBO
-I
CBO
-I
EBO
MMBTA92
MMBTA93
MMBTA92
MMBTA93
-V
(BR)CBO
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
BE(sat)
f
T
MMBTA92
MMBTA93
C
cb
Min.
25
80
25
-
-
-
300
200
300
200
5
-
-
50
-
-
Max.
-
200
-
0.25
0.25
0.1
-
-
-
-
-
0.5
0.9
-
6
8
Unit
-
-
-
µA
µA
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated :16/03/2015 Rev:01
详细参数
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