2N2907 / 2N2907A
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into one group
according to its DC current gain. As
complementary type the NPN transistor ST
2N2222 and ST 2N2222A are recommended.
On special request, these transistors can be
manufactured in different pin configurations.
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Absolute Maximum Ratings (T
a
= 25℃)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
2N2907
2N2907A
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
P
tot
T
j
T
stg
Value
60
40
60
5
600
625
150
- 55 to + 150
Unit
V
V
V
mA
mW
℃
℃
SEMTECH ELECTRONICS LTD.
®
Dated: 12/04/2016 Re: 02
2N2907 / 2N2907A
Characteristics at T
a
= 25℃
Parameter
DC Current Gain
at -I
C
= 0.1 mA, -V
CE
= 10 V
at -I
C
= 1 mA, -V
CE
= 10 V
at -I
C
= 10 mA, -V
CE
= 10 V
at -I
C
= 150 mA, -V
CE
= 10 V
at -I
C
= 500 mA, -V
CE
= 10 V
Collector Base Cutoff Current
at -V
CB
= 50 V
Collector Base Breakdown Voltage
at -I
C
= 10 µA
Collector Emitter Breakdown Voltage
at -I
C
= 10 mA
Emitter Base Breakdown Voltage
at -I
E
= 10 µA
Collector Saturation Voltage
at -I
C
= 150 mA, -I
B
= 15 mA
at -I
C
= 500 mA, -I
B
= 50 mA
Base Saturation Voltage
at -I
C
= 150 mA, -I
B
= 15 mA
at -I
C
= 500 mA, -I
B
= 50 mA
Gain Bandwidth Product
at -I
C
= 50 mA , -V
CE
= 20 V, f = 100 MHz
Collector Output Capacitance
at -V
CB
= 10 V, f = 1 MHz
Turn-on Time
at -V
CC
= 30 V, -I
C
= 150 mA, -I
B1
= 15 mA
Delay Time
at -V
CC
= 30 V, -I
C
= 150 mA, -I
B1
= 15 mA
Rise Time
at -V
CC
= 30 V, -I
C
= 150 mA, -I
B1
= 15 mA
Turn-off Time
at -V
CC
= 6 V, -I
C
= 150 mA, -I
B1
= -I
B2
= 15 mA
Storage Time
at -V
CC
= 6 V, -I
C
= 150 mA, -I
B1
= -I
B2
= 15 mA
Fall Time
at -V
CC
= 6 V, -I
C
= 150 mA, -I
B1
= -I
B2
= 15 mA
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A
Symbol
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
-I
CBO
-I
CBO
-V
(BR)CBO
2N2907
2N2907A
-V
(BR)CEO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
CE(sat)
-V
BE(sat)
-V
BE(sat)
f
T
C
ob
t
on
t
d
t
r
t
off
t
s
t
f
Min.
35
75
50
100
75
100
100
30
50
-
-
60
40
60
5
-
-
-
-
200
-
-
-
-
-
-
-
Max.
-
-
-
-
-
-
300
-
-
20
10
-
-
-
-
0.4
1.6
1.3
2.6
-
8
45
10
40
100
80
30
Unit
-
-
-
-
-
-
-
-
-
nA
nA
V
V
V
V
V
V
V
V
MHz
pF
ns
ns
ns
ns
ns
ns
SEMTECH ELECTRONICS LTD.
®
Dated: 12/04/2016 Re: 02
详细参数
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