2SC1815
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups,
O, Y, G and L, according to its DC current
gain. As complementary type the PNP
transistor 2SA1015 is recommended.
On special request, these transistors can be
manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
60
50
5
150
50
400
150
- 55 to + 150
Unit
V
V
V
mA
mA
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 6 V, I
C
= 2 mA
Current Gain Group
O
Y
G
L
Symbol
h
FE
h
FE
h
FE
h
FE
h
FE
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
f
T
C
ob
Min.
70
120
200
350
25
-
-
-
-
80
-
Max.
140
240
400
700
-
100
100
0.25
1
-
3
Unit
-
-
-
-
-
nA
nA
V
V
MHz
pF
at V
CE
= 6 V, I
C
= 150 mA
Collector Base Cutoff Current
at V
CB
= 60 V
Emitter Base Cutoff Current
at V
EB
= 5 V
Collector Emitter Saturation Voltage
at I
C
= 100 mA, I
B
= 10 mA
Base Emitter Saturation Voltage
at I
C
= 100 mA, I
B
= 10 mA
Gain Bandwidth Product
at V
CE
= 10 V, I
C
= 1 mA
Output Capacitance
at V
CB
= 10 V, f = 1 MHz
SEMTECH ELECTRONICS LTD.
®
Dated
：
12/08/2016 Rev
：
02
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
