ES1A THRU ES1M
Surface Mount Superfast Recovery Rectifier
Reverse Voltage - 50 to 1000 V
Forward Current - 1 A
Features
• Glass passivated junction
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Easy pick and place
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Superfast recovery times for high efficiency
Mechanical Data
•
Case:
SMA (DO-214AC), molded plastic
•
Terminals:
Solder plated, solderable per
MIL-STD-750, Method 2026 guaranteed
•
Polarity:
Color band denotes cathode end
Absolute Maximum Ratings and Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For
capacitive load, derate current by 20%.
Symbols
ES1A ES1B ES1C ES1D ES1E ES1G ES1J
ES1K ES1M Units
-
V
V
V
A
A
Parameter
Marking
ES1A ES1B ES1C ES1D ES1E ES1G ES1J ES1K ES1M
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms Single
Half Sine Wave Superimposed on Rated
Load (JEDEC Method)
Maximum Forward Voltage at 1 A
Maximum Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
at V
R
= 4 V, f = 1 MH
Z
Typical Reverse Recovery Time
at I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
Typical Thermal Resistance
T
J
= 25℃
T
J
= 125℃
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
t
rr
R
θJL
R
θJA
1
5
50
10
35
35
85
- 55 to + 150
50
25
50
100
70
100
150
105
150
200
140
200
300
210
300
1
30
1.3
1.7
400
280
400
600
420
600
800
560
800
1000
700
1000
V
µA
pF
ns
℃/W
℃
Operating Junction and Storage Temperature Range T
j
,T
stg
SEMTECH ELECTRONICS LTD.
®
Dated : 10/03/2016 JG Rev:01
MEMS传感器
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