BC516
PNP Silicon Darlington Transistor
Collector
Base
Emitter
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
-I
CM
P
tot
T
j
T
S
Value
40
30
10
500
800
500
150
- 55 to + 150
Unit
V
V
V
mA
mA
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 2 V, -I
C
= 20 mA
Collector Base Cutoff Current
at -V
CB
= 30 V
Emitter Base Cutoff Current
at -V
EB
= 10 V
Collector Base Breakdown Voltage
at -I
C
= 100 µA
Collector Emitter Breakdown Voltage
at -I
C
= 1 mA
Emitter Base Breakdown Voltage
at -I
E
= 10 µA
Collector Emitter Saturation Voltage
at -I
C
= 100 mA, -I
B
= 0.1 mA
Base Emitter Saturation Voltage
at -I
C
= 100 mA, -I
B
= 0.1 mA
Base Emitter On Voltage
at -V
CE
= 5 V, -I
C
= 10 mA
Transition Frequency
at -V
CE
= 5 V, -I
C
= 10 mA
Symbol
h
FE
-I
CBO
-I
EBO
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
BE(sat)
-V
BE(on)
f
T
Min.
30000
-
-
40
30
10
-
-
-
125
Max.
-
100
100
-
-
-
1
1.5
1.4
-
Unit
-
nA
nA
V
V
V
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/01/2008
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