MMBT8550
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
As complementary type the NPN transistor
MMBT8050 is recommended.
TO-236 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
P
tot
T
j
T
Stg
Value
40
25
6
600
350
150
- 55 to + 150
Unit
V
V
V
mA
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 1 V, -I
C
= 100 mA
at -V
CE
= 1 V, -I
C
= 500 mA
Collector Base Cutoff Current
at -V
CB
= 35 V
Collector Base Breakdown Voltage
at -I
C
= 10 µA
Collector Emitter Breakdown Voltage
at -I
C
= 2 mA
Emitter Base Breakdown Voltage
at -I
E
= 100 µA
Collector Emitter Saturation Voltage
at -I
C
= 500 mA, -I
B
= 50 mA
Base Emitter Saturation Voltage
at -I
C
= 500 mA, -I
B
= 50 mA
Gain Bandwidth Product
at -V
CE
= 5 V, -I
C
= 10 mA
Symbol
MMBT8550C
MMBT8550D
h
FE
h
FE
h
FE
-I
CBO
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
BE(sat)
f
T
Min.
100
160
40
-
40
25
6
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
100
Max.
250
400
-
100
-
-
-
0.5
1.2
-
Unit
-
-
-
nA
V
V
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
®
Dated : 16/03/2015 Rev:01
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