MMBT4403
PNP Silicon General Purpose Transistor
.
TO-236 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation FR-5 Board
1)
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
P
tot
R
θJA
T
j
T
stg
Value
40
40
5
600
300
417
150
- 55 to + 150
Unit
V
V
V
mA
mW
O
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature Range
1)
C/W
O
C
C
O
FR-5 = 1 X 0.75 X 0.062 in.
SEMTECH ELECTRONICS LTD.
®
Dated : 05/11/2015 Rev:02
MMBT4403
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 1 V, -I
C
= 0.1 mA
at -V
CE
= 1 V, -I
C
= 1 mA
at -V
CE
= 1 V, -I
C
= 10 mA
at -V
CE
= 2 V, -I
C
= 150 mA
at -V
CE
= 2 V, -I
C
= 500 mA
Collector Base Cutoff Current
at -V
CB
= 35 V
Emitter Base Cutoff Current
at -V
EB
= 5 V
Collector Base Breakdown Voltage
at -I
C
= 0.1 mA
Collector Emitter Breakdown Voltage
at -I
C
= 1 mA
Emitter Base Breakdown Voltage
at -I
E
= 0.1 mA
Collector Emitter Saturation Voltage
at -I
C
= 150 mA, -I
B
= 15 mA
at -I
C
= 500 mA, -I
B
= 50 mA
Base Emitter Saturation Voltage
at -I
C
= 150 mA, -I
B
= 15 mA
at -I
C
= 500 mA, -I
B
= 50 mA
Current Gain Bandwidth Product
at -V
CE
= 10 V, -I
C
= 20 mA, f = 100 MHz
Collector Base Capacitance
at -V
CB
= 10 V, f = 1 MHz
Delay Time
-V
CC
= 30 V, -V
EB
= 2 V, -I
C
= 150 mA, -I
B1
= 15 mA
Rise Time
-V
CC
= 30 V, -V
EB
= 2 V, -I
C
= 150 mA, -I
B1
= 15 mA
Storage Time
-V
CC
= 30 V, -I
C
= 150 mA, -I
B1
= -I
B2
= 15 mA
Fall Time
-V
CC
= 30 V, -I
C
= 150 mA, -I
B1
= -I
B2
= 15 mA
Symbol
h
FE
h
FE
h
FE
h
FE
h
FE
-I
CBO
-I
EBO
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
CE(sat)
-V
BE(sat)
-V
BE(sat)
f
T
C
ob
t
d
t
r
t
s
t
f
Min.
30
60
100
100
20
-
-
40
40
5
-
-
0.75
-
200
-
-
-
-
-
Max.
-
-
-
300
-
0.1
0.1
-
-
-
0.4
0.75
0.95
1.3
-
8.5
15
20
225
30
Unit
-
-
-
-
-
µA
µA
V
V
V
V
V
V
V
MHz
pF
ns
ns
ns
ns
SEMTECH ELECTRONICS LTD.
®
Dated : 05/11/2015 Rev:02
详细参数
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