LLDB3, LLDB4
Silicon Bidirectional Trigger Diodes
These diacs are intended for use in thyristor phase control,
circuits for lamp-dimming, universal-motor speed controls, and
heat controls.
LL-34
3.5±0.1
0.3±0.1
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Power Dissipation (T
a
= 65
O
C)
Repetitive Peak On-state Current (tp = 20 µs, f = 100 Hz)
Operating Junction and Storage Temperature Range
Characteristics at T
a
= 25
O
C
Parameter
Breakover Voltage
at C = 22 nF, see diagram 1
Breakover Voltage Symmetry
at C = 22 nF, see diagram 1
Dynamic Breakover Voltage
at
ΔI
= [I
BO
to I
F
= 10 mA]
Output Voltage
See diagram 2
Breakover Current
at C = 22 nF
Leakage Current
at V
B
= 0.5 V
BO
max
Rise Time
See diagram 3
S
®
H
C
E
T
M
E
Symbol
P
tot
Value
150
2
Unit
mW
A
I
TRM
T
j
, T
stg
- 40 to + 125
O
Glass Case Mini MELF
Dimensions in mm
1.45±0.05
C
Symbol
V
BO
Min.
28
35
-
Max.
36
45
3
-
Unit
V
LLDB3
LLDB4
[|+V
BO
|-|-V
BO
|]
|
ΔV
± |
V
O
V
5
V
5
-
-
V
I
BO
I
B
t
r
50
µA
-
-
10
2
µA
µs
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
Dated : 08/08/2009
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
