2N3905 / 2N3906
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
As complementary types the NPN transistors
2N3903 and 2N3904 are recommended.
On special request, these transistors can be
manufactured in different pin configurations.
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
P
tot
T
j
T
stg
Value
40
40
6
200
625
150
- 55 to + 150
Unit
V
V
V
mA
mW
O
C
C
O
SEMTECH ELECTRONICS LTD.
®
Dated : 11/08/2016 Rev:02
2N3905 / 2N3906
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 1 V, -I
C
= 0.1 mA
at -V
CE
= 1 V, -I
C
= 1 mA
at -V
CE
= 1 V, -I
C
= 10 mA
at -V
CE
= 1 V, -I
C
= 50 mA
at -V
CE
= 1 V, -I
C
= 100 mA
Collector Base Cutoff Current
at -V
CB
= 30 V
Emitter Base Cutoff Current
at -V
EB
= 6 V
Collector Base Breakdown Voltage
at -I
C
= 10 µA
Collector Emitter Breakdown Voltage
at -I
C
= 1 mA
Emitter Base Breakdown Voltage
at -I
E
= 10 µA
Collector Emitter Saturation Voltage
at -I
C
= 10 mA, -I
B
= 1 mA
at -I
C
= 50 mA, -I
B
= 5 mA
Base Emitter Saturation Voltage
at -I
C
= 10 mA, -I
B
= 1 mA
at -I
C
= 50 mA, -I
B
= 5 mA
Gain Bandwidth Product
at -V
CE
= 20 V, -I
C
= 10 mA, f = 100 MHz
Symbol
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
-I
CBO
-I
EBO
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
CE(sat)
-V
BE(sat)
-V
BE(sat)
2N3905
2N3906
f
T
C
ob
t
d
t
r
t
s
t
f
Min.
30
60
40
80
50
100
30
60
15
30
-
-
40
40
6
-
-
-
-
200
250
-
-
-
-
-
Max.
-
-
-
-
150
300
-
-
-
-
50
50
-
-
-
0.25
0.4
0.85
0.95
-
-
4.5
35
35
225
75
Unit
-
-
-
-
-
-
-
-
-
-
nA
nA
V
V
V
V
V
MHz
pF
ns
ns
ns
ns
Collector Base Capacitance
at -V
CB
= 5 V, f = 100 KHz
Delay Time
at -V
CC
= 3 V, -V
BE
= 0.5 V, -I
C
= 10 mA, -I
B1
= 1 mA
Rise Time
at -V
CC
= 3 V, -V
BE
= 0.5 V, -I
C
= 10 mA, -I
B1
= 1 mA
Storage Time
at -V
CC
= 3 V, -I
C
= 10 mA, -I
B1
= I
B2
= 1 mA
Fall Time
at -V
CC
= 3 V, -I
C
= 10 mA, -I
B1
= I
B2
= 1 mA
SEMTECH ELECTRONICS LTD.
®
Dated : 11/08/2016 Rev:02