8050
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
The transistor is subdivided into four groups, B, C, D
and E, according to its DC current gain.
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 1 V, I
C
= 100 mA
Current Gain Group B
C
D
E
Symbol
h
FE
h
FE
h
FE
h
FE
h
FE
I
CBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
f
T
C
ob
Min.
70
120
160
300
60
-
40
25
6
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
100
12
Max.
120
200
300
380
-
100
-
-
-
0.5
1.2
-
-
Unit
-
-
-
-
-
nA
V
V
V
V
V
MHz
pF
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
40
25
6
800
100
625
150
- 55 to + 150
Unit
V
V
V
mA
mA
mW
O
C
C
O
at V
CE
= 1 V, I
C
= 350 mA
Collector Base Cutoff Current
at V
CB
= 35 V
Collector Base Breakdown Voltage
at I
C
= 10 µA
Collector Emitter Breakdown Voltage
at I
C
= 2 mA
Emitter Base Breakdown Voltage
at I
E
= 100 µA
Collector Emitter Saturation Voltage
at I
C
= 500 mA, I
B
= 50 mA
Base Emitter Saturation Voltage
at I
C
= 500 mA, I
B
= 50 mA
Gain Bandwidth Product
at V
CE
= 5 V, I
C
= 10 mA, f = 50 MHz
Collector Base Capacitance
at V
CB
= 10 V, f = 1 MHz
SEMTECH ELECTRONICS LTD.
®
Dated : 01/07/2016
Rev:02
8050
Admissible power dissipation
versus ambient temperature
Valid provided that leads are kept at
ambient temperature
at a distance of 2 mm from case
Collector current
versus base emitter voltage
DC current gain
versus collector current
W
1
mA
3
10
5
2
1000
700
V
CE
=1V
25
o
C
-50 C
o
500
400
300
200
150 C
o
C
=25
o
0.8
10
2
5
150
o
C
typical
limits
at Tamb=25
o
C
h
FE
Ta
mb
P
tot
0.6
I
C
10
100
70
50
40
30
-50
o
C
2
0.4
5
2
1
0.2
5
2
20
10
10
-1
1
10
10
2
10
3
I
C
0
0
100
T
amb
200 C
o
10
-1
0
1
V
BE
2V
C o llector satu ration vo ltage
versus collector current
V
0.5
typical
lim its
at Tam b =25
o
C
Base saturation voltage
versus collector current
V
2
typical
lim its
at Tam b=25
o
C
Ic
I
B
V
BE
sat
Com m on em itter
collector characteristics
mA
500
3.2
2.8
2.4
0.4
Ic
I
B
=10
400
=10
2
1.8
1.6
V
C E
sat
0.3
I
C
300
1.4
1.2
1
0.2
-50 C
25
o
C
o
1
200
0.8
0.6
0.1
150 C
o
25 C
-50 C
o
o
150 C
o
100
I
B
=
0.2m A
0.4
0
10
-1
1
10
10
2
10
3
m A
I
C
0
10
-1
1
10
10
2
10
3
mA
I
C
0
0
1
2V
V
CE
Common emitter
collector characteristics
mA
100
0.35
Common emitter
collector characteristics
mA
500
0.9
0.85
Gain bandwidth product
versus collector current
MHz
10
3
7
5
o
Tamb=25 C
f=20MHz
80
0.3
400
4
3
2
I
C
60
0.25
I
C
0.2
300
0.8
f
T
V
CE
=5V
1V
10
2
7
5
4
40
0.15
200
20
0.1
I
B
=0.05mA
100
0.75
3
2
V
BE
=0.7V
0
0
10
20V
V
CE
0
0
1
V
CE
2V
10
1
2
5
10
2
5
10
2 2
5
10
3
mA
I
C
SEMTECH ELECTRONICS LTD.
®
Dated : 01/07/2016
Rev:02
ARM技术
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