MMBT8550C / MMBT8550D (1.5A)
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
The transistor is subdivided into two groups, C and D,
according to its DC current gain. As complementary
type the NPN transistor MMBT8050C and
MMBT8050D (1.5A) is recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Symbol
Value
25
40
6
1.5
200
150
-55 to +150
Unit
V
V
V
A
mW
O
C o l l e c t o r E m itt e r V o lt a g e
Collec to r B ase V ol tag e
Emitter Base Voltage
Peak Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
-V
CEO
-V
CBO
-V
EBO
-I
CM
P
tot
T
j
T
S
C
C
O
РАДИОТЕХ
®
Тел.: (495) 795-0805
Факс: (495) 234-1603
Эл. почта: info@rct.ru
Веб: www.rct.ru
MMBT8550C / MMBT8550D (1.5A)
Characteristics at T
amb
=25
O
C
Symbol
DC Current Gain
at -V
CE
=1V, -I
C
=100mA
at -V
CE
=1V, -I
C
=800mA
Collector Cutoff Current
at -V
CB
=35V
Emitter Cutoff Current
at -V
BE
=6V
Collector Saturation Voltage
at -I
C
=800mA, -I
B
=80mA
Base Saturation Voltage
at -I
C
=800mA, -I
B
=80mA
Collector Emitter Breakdown Voltage
at -I
C
=2mA
Collector Base Breakdown Voltage
at -I
C
=100µA
Emitter Base Breakdown Voltage
at -I
E
=100µA
Base Emitter Voltage
at -I
C
=10mA, -V
CE
=1V
Gain Bandwidth Product
at -V
CE
=10V, -I
C
=50mA
MMBT8550C
MMBT8550D
h
FE
h
FE
h
FE
-I
CBO
-I
EBO
-V
CE(sat)
-V
BE(sat)
-V
(BR)CEO
-V
(BR)CBO
-V
(BR)EBO
-V
BE
f
T
120
160
40
-
-
-
-
25
40
6
-
120
250
400
-
100
100
0.5
1.2
-
-
-
1
-
-
-
-
nA
nA
V
V
V
V
V
V
MHz
Min.
Max.
Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 20/10/2005
MMBT8550C / MMBT8550D (1.5A)
Typical Characteristics
Static Characteristic
Ic(mA), COLLECTOR CURRENT
DC Current Gain
h
FE
, DC CURRENT GAIN
-0.5
-0.4
-0.3
-0.2
-0.1
0
-0.4
-0.8
I
B
=-4.0mA
I
B
=-3.5mA
I
B
=-3.0mA
I
B
=-2.5mA
I
B
=-2.0mA
I
B
=-1.5mA
I
B
=-1.0mA
I
B
=-0.5mA
-1.2
-1.6
-2.0
1000
V
CE
=-1V
100
10
1
-0.1
-1
-10
-100
-1000
V
CE
(V), COLLECTOR-EMITTR VOLTAGE
Base -Emittr Saturation Voltage
Collector-Emitter Saturation Voltage
I
C
=10I
B
V
BE(sat)
I
C
(mA), COLLECTOR CURRENT
Base-Emitter On Voltage
Ic(mA), COLLECTOR CURRENT
V
BE(sat)
, V
CE(sat)
(mV), SATURATION
VOLTAGE
-10000
-100
V
CE
=-1V
-1000
-10
-100
V
CE(sat)
-10
-0.1
-1
-10
-100
-1000
-1
-0.1
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
I
C
(mA), COLLECTOR CURRENT
Current Gain Bandwidth Product
V
BE
(V), BASE-EMITTER VOLTAGE
f
T
(MHz), CURRENT GAIN
BANDWIDTH PRODUCT
1000
V
CE
=-10V
100
10
-1
-10
-100
-1000
I
C
(mA), COLLECTOR CURRENT
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 20/10/2005
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