MMBT3904
NPN Silicon General Purpose Transistor
for switching and amplifier applications.
TO-236 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
60
40
6
200
350
150
- 55 to + 150
Unit
V
V
V
mA
mW
O
C
C
O
SEMTECH ELECTRONICS LTD.
®
Dated : 16/03/2015 Rev: 02
MMBT3904
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 1 V, I
C
= 0.1 mA
at V
CE
= 1 V, I
C
= 1 mA
at V
CE
= 1 V, I
C
= 10 mA
at V
CE
= 1 V, I
C
= 50 mA
at V
CE
= 1 V, I
C
= 100 mA
Collector Base Cutoff Current
at V
CB
= 30 V
Emitter Base Cutoff Current
at V
EB
= 6 V
Collector Base Breakdown Voltage
at I
C
= 10 µA
Collector Emitter Breakdown Voltage
at I
C
= 1 mA
Emitter Base Breakdown Voltage
at I
E
= 10 µA
Collector Emitter Saturation Voltage
at I
C
= 10 mA, I
B
= 1 mA
at I
C
= 50 mA, I
B
= 5 mA
Base Emitter Saturation Voltage
at I
C
= 10 mA, I
B
= 1 mA
at I
C
= 50 mA, I
B
= 5 mA
Current Gain Bandwidth Product
at V
CE
= 20 V, I
C
= 10 mA, f = 100 MHz
Collector Output Capacitance
at V
CB
= 5 V, I
E
= 0, f = 1 MHz
Delay Time
at V
CC
= 3 V, V
BE
= 0.5 V, I
C
= 10 mA, I
B1
= 1 mA
Rise Time
at V
CC
= 3 V, V
BE
= 0.5 V, I
C
= 10 mA, I
B1
= 1 mA
Storage Time
at V
CC
= 3 V, I
C
= 10 mA, I
B1
= -I
B2
= 1 mA
Fall Time
at V
CC
= 3 V, I
C
= 10 mA, I
B1
= -I
B2
= 1 mA
Symbol
h
FE
h
FE
h
FE
h
FE
h
FE
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
f
T
C
ob
t
d
t
r
t
s
t
f
Min.
40
70
100
60
30
-
-
60
40
6
-
-
0.65
-
300
-
-
-
-
-
Max.
-
-
300
-
-
50
50
-
-
-
0.2
0.3
0.85
0.95
-
4
35
35
200
50
Unit
-
-
-
-
-
nA
nA
V
V
V
V
V
V
V
MHz
pF
ns
ns
ns
ns
SEMTECH ELECTRONICS LTD.
®
Dated : 16/03/2015 Rev: 02
详细参数
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