SC7002 DATASHEET
SOUTHCHIP SEMICONDUCTOR
SOUTHCHIP CONFIDENTIAL
12 mΩ Power Switch with Curernt Limit and Charging Port Controller
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DESCRIPTION
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FEATURES
12mΩ Ultra-low Rdson NMOS Switch
Programmable Current Limit
± 5% Current Limit Accuracy at 2.7A
Built-in Soft-Start
Ultra-low Operation Current
USB Charging Port Controller Function
✓
Battery Charging specification BC1.2 for DCP
✓
Chinese telecommunication industrial standard
YD/T 1591-2009
✓
D+/D- option for Apple device (2.4A)
✓
D+/D- option for Samsung device
The SC7002 is a power switch which integrates an
ultra-low Rdson (12mΩ) N-channel MOSFET. It is
designed for USB port applications or other applications
which require high current switch. It provides current
limit function, and the current limit can be
programmable through an external resistor.
The SC7002 also integrates USB charging port
controller function. It can support traditional type A USB
port with DP and DM signals. It monitors the DP/DM
data line voltage, and automatically supports the DCP
schemes for Battery Charging specification (BC1.2), the
divider Mode and 1.2V/1.2V Mode.
The SC7002 also supports various protections,
including over voltage protection, under voltage
protection, short circuit protection, and thermal
shutdown protection.
The SC7002 requires a minimum number of external
components to complete USB switch and charging port
solution. It is available in TSOT23-6 package.
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Input Under Voltage Protection
Input Over Voltage Protection
Over Current Protection
Short Circuit Protection
Thermal Shutdown Protection
±
8kV HBM ESD Rating for USB IO pins
TSOT23-6 package
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APPLICATIONS
USB chargers
USB HUB
USB power supplies
USB peripherals
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ORDERING INFORMATION
Part Number
SC7002SAER
Package
TSOT23-6
Dimension
2.9*2.8*0.95 mm
Copyright © 2018, Southchip Semiconductor Technology (Shanghai) Co., Ltd.
SC7002 DATASHEET
SOUTHCHIP SEMICONDUCTOR
5
Typical Application Circuit
SOUTHCHIP CONFIDENTIAL
4.7
F
VOUT
Power Supply
DCDC or ACDC
VIN
470
F
4.7
F
VOUT
DP
GND
ISET
Riset
GND
DM
Figure 1 SC7002 typical application circuit
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Pin Configurations and Functions
TOP VIEW
1
6
VIN
GND
VOUT
2
SC7002
5
DP
DM
ISET
3
4
Table 1 Pin description
Terminals
1
2
3
4
5
6
NAME
VIN
GND
ISET
DM
DP
VOUT
I/O
I
IO
I
IO
IO
O
Input to the switch
Ground
Set the current limit value
DMpin for type A USB port interface
DP pin for type A USB port interface
Output of the switch
Description
Type-A USB
Copyright © 2018, Southchip Semiconductor Technology (Shanghai) Co., Ltd.
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SC7002 DATASHEET
SOUTHCHIP SEMICONDUCTOR
7
7.1
SOUTHCHIP CONFIDENTIAL
Electrical Specifications
Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)
(1)
Min.
VIN, VOUT
Voltage
(2)
DP, DM,
ISET
T
J
T
stg
T
L
T
D
T
ΘJA(3)
T
ΘJC(3)
(1)
(2)
(3)
Operating junction temperature
Storage temperature
Lead Temperature
Continuous power dissipation (TA=25°
C)
Junction to ambient thermal resistance
Junction to case thermal resistance
100
12
-0.3
-0.3
-0.3
-40
-65
Max.
7
VIN+0.3V
or 5.7V
5.5
150
150
260
1.25
Unit
V
V
V
°
C
°
C
°
C
W
°
C/W
°
C/W
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device.
All voltages are with respect to network ground terminal.
Measured on JESD51-7, 4-layer PCB.
7.2
ESD Ratings
Min.
All pins except DP / DM
Human-body Model (HBM)
(2)
Max.
4
8
1000
Unit
kV
kV
V
-4
-8
-1000
V
ESD(1)
Charged-device Model (CDM)
(3)
(1)
(2)
(3)
DP / DM
Electrostatic discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges
into the device.
Level listed above is the passing level per ANSI, ESDA, and JEDEC JS-001. JEDEC document JEP155 states that 500-V HBM allows
safe manufacturing with a standard ESD control process.
Level listed above is the passing level per EIA-JEDEC JESD22-C101. JEDEC document JEP157 states that 250-V CDM allows safe
manufacturing with a standard ESD control process.
7.3
Recommended Operation Conditions
Min.
V
IN
C
IN
C
OUT
T
A
T
J
VIN votlage range
VIN capacitor
VOUTcapacitor
Operating ambient temperature
Operating junction temperature
4
4.7
3.3
-40
-40
22
85
125
Typ.
5
Max.
5.6
Unit
V
µF
µF
C
C
Copyright © 2018, Southchip Semiconductor Technology (Shanghai) Co., Ltd.
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SC7002 DATASHEET
SOUTHCHIP SEMICONDUCTOR
7.4
Electrical Characteristics
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SOUTHCHIP CONFIDENTIAL
T
J
= 25° and V
IN
= 5V and V
OUT
= 5V unless otherwise noted.
C
PARAMETER
SUPPLY VOLTAGE
V
IN
V
IN_UVLO
I
Q
POWER FET
R
DS_ON
T
SS
CURRENT LIMIT
V
REF
I
LIM
PROTECTION
V
IN_OVP
I
ML
V
SC-th
T
HIC_ON
T
HIC_OFF
VIN OVP protection
Maximum current limit
VOUT short circuit protection
threshold
OCP on time of hiccup
OCP off time of hiccup
Thermal shutdown temperature
threshold
Thermal shutdown hysteresis
Not in current limit
In current limit
Thermal shutdown hysteresis
VOUT<1.1V
Rising edge, over V
OUT
, V
OUT
= 5V
Falling edge
R
ISET
=0
5.6
5.5
5.5
3.4
3.6
3
0.5
150
140
25
3.8
5.8
5.7
6
5.9
V
V
A
V
ms
s
Reference voltage
Current limit accuracy
R
ISET
= 150 KΩ
1.176
2.65
1.2
2.75
1.224
2.88
V
A
Rdson of switch
Soft start time
VIN=5V
VIN = 5V, turning on, no load
VIN = 5V, turning on, IOUT = 2.4A
12
1
1.5
mΩ
ms
ms
Operating voltage
Under
threshold
voltage
lockout
Rising
Hysteresis
VIN=5V, No load
4
3.7
0.5
60
3.8
0.6
92
5.6
3.9
0.7
120
V
V
V
μA
Quiescent current
C
C
C
TSD
DP/DM LOGIC
V
DP_2P75_SRC
V
DM_2P75_SRC
Z
DP/M_2P75
Z
DP/M 1P2
V
DP/DM_1P2_SRC
R
DP/DM_short
DP source 2.75V voltage
DM source 2.75V voltage
DP/DM pin output impedance
for 2.75V output
DP/DM pin output impedance
for1.2V output
DP/DM source 1.2V voltage
DP and DM short circuit switch
VIN=5V
VIN=5V
2.57
2.57
24
70
1.1
5
2.75
2.75
30
2.84
2.84
36
V
V
KΩ
KΩ
V
Ω
100
1.2
10
130
1.3
20
Copyright © 2018, Southchip Semiconductor Technology (Shanghai) Co., Ltd.
4
SC7002 DATASHEET
SOUTHCHIP SEMICONDUCTOR
7.5
Typical Characteristics
SOUTHCHIP CONFIDENTIAL
3.4
6
5.9
Input OVP- V
-40 -20
0
20
40
60
80 100 120
TJ-Junction Temperature -
℃
3.3
UVLO- V
3.2
3.1
3
5.8
5.7
5.6
5.5
-40 -20 0 20 40 60 80 100 120
TJ-Junction Temperature -
℃
Figure 2 Under Voltage Lock Output VS. Temperature
Figure 3 Input Over Voltage Protection VS. Temperature
110
ISB- uA
RDS_O N- mΩ @3A IOUT
120
18
16
14
12
10
VIN=4.5V
VIN=5V
VIN=5.5V
100
90
80
70
-40 -20 0 20 40 60 80 100 120
TJ-Junction Temperature -
℃
8
-40 -20 0 20 40 60 80 100 120
TJ-Junction Temperature -
℃
Figure 5 ON–Resistance VS. Temperature
Figure 4 Standby Current (VIN=5V) VS. Temperature
3
OCP Threshold- A
2.9
2.8
2.7
2.6
2.5
2.4
-40 -20 0 20 40 60 80 100 120
TJ-Junction Temperature -
℃
Figure 6 Over Current Protection (OCP) Threshold
(R
IST
=150K)VS. Temperature
Copyright © 2018, Southchip Semiconductor Technology (Shanghai) Co., Ltd.
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