SM3324NHQG
®
N-Channel Enhancement Mode MOSFET
Features
•
30V/77A,
R
DS(ON)
= 3.6mΩ (Max.) @ V
GS
=10V
R
DS(ON)
= 5.3mΩ (Max.) @ V
GS
=4.5V
Pin Description
D D
D D
•
Lower Q
g
and Q
gd
for high-speed switching
•
Lower R
DS(ON)
to Minimize Conduction Losses
•
ESD Protection
•
100% UIS + R
g
Tested
•
Reliable and Rugged
•
Lead Free and Green Devices Available
(RoHS Compliant)
SG
S S
DFN3x3D-8_EP
(5,6,7,8)
DD DD
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
(4) G
S S S
( 1, 2, 3 )
N-Channel MOSFET
Ordering and Marking Information
SM3324NH
Assembly Material
Handling Code
Temperature Range
Package Code
SM
3324N
XXXXX
Package Code
QG : DFN3x3D-8_EP
Operating Junction Temperature Range
C : -55 to 150
o
C
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
SM3324NH QG :
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines
“Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2015
1
www.sinopowersemi.com
SM3324NHQG
Absolute Maximum Ratings
Symbol
Common Ratings
V
DSS
V
GSS
T
J
T
STG
I
S
I
D
I
DM
P
D
R
θJC
I
D b
P
D b
R
θJA
b
I
AS c
E
AS c
a
®
(T
A
= 25°C Unless Otherwise Noted)
Rating
30
±20
150
-55 to 150
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=25°C
T
C
=100°C
Steady State
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
t
≤
10s
Steady State
L=0.1mH
L=0.1mH
25
77
49
180
32.8
13.1
3.8
18.1
14.5
1.78
1.14
40
70
35
61.25
A
W
°C/W
A
W
°C/W
A
mJ
A
Unit
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
V
°C
Note a：Pulse width is limited by max. junction temperature.
2
Note b：Surface Mounted on 1in pad area, t
≤999sec.
Note c：UIS tested and pulse width limited by maximum junction temperature 150
o
C (initial temperature T
j
=25
o
C).
Copyright
©
Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2015
2
www.sinopowersemi.com
SM3324NHQG
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
BV
DSSt
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Drain-Source Breakdown Voltage
(transient)
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
V
GS
=0V, I
DS
=250µA
VGS=0V, I
D(aval)
=35A
T
case
=25°C, t
transi ent
=100ns
V
DS
=24V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=15A
R
DS(ON) d
Drain-Source On-state Resistance
Gfs
V
SD d
t
rr
t
a
t
b
Q
rr
R
G
C
iss
C
oss
C
rss
t
d(ON )
t
r
t
d(OFF)
t
f
Forward Transconductance
Diode Forward Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DS
=15V, V
GS
=10V,
I
DS
=15A
V
DD
=15V, R
L
=15Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=1Ω
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
I
SD
=5A, dl
SD
/dt=100A/µs,
V
dd
=15V
T
J
=125°C
V
GS
=4.5V, I
DS
=10A
V
DS
=5V, I
DS
=10A
I
SD
=10A, V
GS
=0V
Diode Characteristics
-
-
-
-
-
-
-
-
-
-
-
-
-
0.77
40
20
20
33
0.8
1820
1100
90
15
12
28
32
1.1
-
-
-
-
1.8
-
-
-
-
-
-
-
30
34
-
-
1.4
-
-
-
-
-
-
-
-
-
1.7
-
3
4.35
4.1
20
-
-
1
30
2.5
±12
3.6
-
5.3
-
Parameter
(T
A
= 25°C unless otherwise noted)
Test Conditions
Min.
Typ.
Max.
®
Unit
V
V
µA
V
µA
mΩ
S
V
ns
nC
Ω
pF
Dynamic Characteristics
ns
Gate Charge Characteristics
Q
g
Q
g
Q
gth
Q
gs
Q
gd
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=15V, V
GS
=4.5V,
I
DS
=15A
-
-
-
-
-
28
13.4
2.5
4
4.5
37
-
-
-
-
nC
Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%.
Copyright
©
Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2015
3
www.sinopowersemi.com
SM3324NHQG
Typical Operating Characteristics
Power Dissipation
35
30
25
20
15
10
5
0
T
C
=25 C
0
20
40
60
80
100 120 140 160
o
®
Drain Current
90
75
I
D
- Drain Current (A)
P
tot
- Power (W)
60
45
30
15
T
C
=25 C,V
G
=10V
0
0
20
40
60
80 100 120 140 160
o
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature
Safe Operation Area
Normalized Transient Thermal Resistance
400
2
1
Thermal Transient Impedance
Duty = 0.5
0.2
I
D
- Drain Current (A)
)L
im
it
100
(on
100
µ
s
Rd
s
0.1
0.02
0.1
0.05
10
1ms
0.01
0.01
10ms
1
DC
o
1E-3
Single Pulse
0.1
0.01
T
C
=25 C
0.1
1
10
100
1E-4
1E-6
R
θ
JC
: 3.8 C/W
o
1E-5
1E-4
1E-3
0.01
0.1
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
©
Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2015
4
www.sinopowersemi.com
SM3324NHQG
Typical Operating Characteristics (Cont.)
Safe Operation Area
Normalized Transient Thermal Resistance
400
100
2
1
0.2
0.1
0.05
Duty = 0.5
®
Thermal Transient Impedance
I
D
- Drain Current (A)
Rd
s(
on
)L
im
it
10
300
µ
s
1ms
0.1
0.02
0.01
1
10ms
0.01
Single Pulse
0.1
0.01
0.01
T
A
=25 C
O
DC
1s
100ms
0.1
1
10
100
1E-3
1E-4 1E-3 0.01 0.1
Mounted on 1in pad
o
R
θ
JA
: 70 C/W
2
1
10
100 1000
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Output Characteristics
180
V
GS
=4.5,5,6,7,8,9,10V
4V
7
Drain-Source On Resistance
120
R
DS(ON)
- On - Resistance (mΩ)
150
6
I
D
- Drain Current (A)
5
V
GS
=4.5V
90
3.5V
60
4
V
GS
=10V
3
30
3V
2.5V
0.5
1.0
1.5
2.0
2.5
3.0
2
0
0.0
1
0
30
60
90
120
150
180
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Copyright
©
Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2015
5
www.sinopowersemi.com
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