SM3380EHQG
®
Dual N-Channel Enhancement Mode MOSFET
Features
·
Channel 1
30V/18A,
R
DS(ON)
= 10.8mW (max.) @ V
GS
= 10V
R
DS(ON)
= 17.5mW (max.) @ V
GS
= 4.5V
Pin Description
G2
S2
S2 S2
2
/D
S1
D1
·
G1
D1
D1
D1
Channel 2
30V/18A,
R
DS(ON)
= 10mW (max.) @ V
GS
= 10V
R
DS(ON)
= 16mW (max.) @ V
GS
= 4.5V
D1
(2) (3) (4)
DFN3x3E-8_EP2
S1/D2
·
·
·
·
100% UIS Tested
ESD Protection
Reliable and Rugged
Lead Free Available (RoHS Compliant)
G1 (1)
G2
(8)
Applications
·
Power Management in Desktop Computer or
DC/DC Converters.
S2 (5) (6)(7)
N-Channel MOSFET
Ordering and Marking Information
SM3380EH
Assembly Material
Handling Code
Temperature Range
Package Code
SM
3380E
XXXXX
Package Code
QG : DFN3x3E-8_EP2
Operating Junction Temperature Range
C : -55 to 150
o
C
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
SM3380EH QG :
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines
“Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - February, 2016
1
www.sinopowersemi.com
SM3380EHQG
Absolute Maximum Ratings
Symbol
Common Ratings
V
DSS
V
GSS
T
J
T
STG
I
S
I
D a
I
DM b
P
D
R
qJC
I
D c
I
DM
P
D c
R
qJA
I
AS
d
®
(T
A
= 25°C unless otherwise noted)
Channel 1 Channel 2
30
±20
150
-55 to 150
T
C
=25°C
T
C
=25°C
T
C
=25°C
T
C
=25°C
Steady State
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=25°C
T
A
=70°C
t
£
10s
Steady State
c
L=0.1mH
L=0.5mH
L=0.1mH
L=0.5mH
5
18 *
45
b
20
6
8.4
6.7
33.5
1.14
0.7
66
110
15
9
11.25
20.3
5
18 *
45
b
20
6
9.1
7.3
36
1.3
0.8
60
100
15
9
11.25
20.3
30
±20
Unit
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Continuous Drain Current
Pulse Drain Current Tested
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Continuous Drain Current
Pulse Drain Current Tested
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
V
°C
A
A
A
W
°C/W
A
A
W
°C/W
A
mJ
E
AS d
Note
Note
Note
Note
a,*：Max. continuous current is limited by bonding wire.
b：Pulse width is limited by max. junction temperature.
c：R
q
JA
steady state t=999s.
d：UIS tested and pulse width limited by maximum junction temperature 150
o
C (initial temperature T
j
=25
o
C).
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - February, 2016
2
www.sinopowersemi.com
SM3380EHQG
Electrical Characteristics
Symbol
Static Characteristics
BV
DS S
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
V
GS
=0V, I
DS
=250mA
V
DS
=24V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
D S
=250mA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=10A
V
GS
=4.5V, I
DS
=8A
I
SD
=5A, V
GS
=0V
I
DS
=10A, dl
SD
/dt=100A/ms
30
-
-
1.4
-
-
-
-
-
-
-
-
-
-
-
V
DD
=15V, R
L
=15W,
I
DS
=1A, V
GEN
=10V,
R
G
=6W
-
-
-
-
V
DS
=15V, V
GS
=10V,
I
DS
=10A
-
-
-
-
-
1.8
-
9
13.5
0.8
20.5
7.2
1.35
455
318
22
8.5
10
14
10.6
8
1.6
1.2
-
1
30
2.5
±10
10.8
17.5
1.1
-
-
2.5
600
-
-
16
18
26
19
12
-
-
Parameter
(T
A
= 25°C unless otherwise noted)
Channel 1
Min.
Typ.
Max.
®
Test Conditions
Unit
V
mA
V
mA
mW
R
DS(ON) e
Drain-Source On-state Resistance
Diode Characteristics
V
SD e
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
ns
nC
W
pF
Q
rr
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Dynamic Characteristics
f
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
ns
Gate Charge Characteristics
f
nC
Note e：Pulse test ; pulse width£300
m
s, duty cycle£2%.
Note f：Guaranteed by design, not subject to production testing.
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - February, 2016
3
www.sinopowersemi.com
SM3380EHQG
Electrical Characteristics
Symbol
Static Characteristics
BV
DS S
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
V
GS
=0V, I
DS
=250mA
V
DS
=24V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
D S
=-250mA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=10A
V
GS
=4.5V, I
DS
=8A
I
SD
=5A, V
GS
=0V
I
DS
=10A, dl
SD
/dt=100A/ms
30
-
-
1.3
-
-
-
-
-
-
-
-
-
-
-
V
DD
=15V, R
L
=15W,
I
DS
=1A, V
GEN
=10V,
R
G
=6W
-
-
-
-
V
DS
=15V, V
GS
=10V,
I
DS
=10A
-
-
-
-
-
1.8
-
8.3
12.5
0.8
20.5
7.2
1.35
455
318
22
8.5
10
14
10.6
8
1.6
1.2
-
1
30
2.5
±10
10
16
1.3
-
-
2.5
600
-
-
16
18
26
19
12
-
-
Parameter
(T
A
= 25°C unless otherwise noted)
Test Conditions
Channel 2
Min.
Typ.
Max.
®
Unit
V
mA
mA
V
mA
mW
R
DS(ON) e
Drain-Source On-state Resistance
Diode Characteristics
V
SD e
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
ns
nC
W
pF
Q
rr
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Dynamic Characteristics
f
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
ns
Gate Charge Characteristics
f
nC
Note e：Pulse test; pulse width£300
m
s, duty cycle£2%.
Note f：Guaranteed by design, not subject to production testing.
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - February, 2016
4
www.sinopowersemi.com
SM3380EHQG
Channel 1 Typical Operating Characteristics
Power Dissipation
24
20
®
Drain Current
20
16
16
I
D
- Drain Current (A)
o
P
tot
- Power (W)
12
12
8
8
4
T
C
=25 C
0
20
40
60
80
100 120 140 160
4
T
C
=25 C,V
G
=10V
0
20
40
60
80 100 120 140 160
o
0
0
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature
Safe Operation Area
100
3
Thermal Transient Impedance
Normalized Transient Thermal Resistance
100
m
s
1
0.2
Duty = 0.5
I
D
- Drain Current (A)
n)
L
im
it
Rd
s(o
10
0.1
0.02
0.1
0.05
1ms
0.01
0.01
1
10ms
DC
1E-3
Single Pulse
Mounted on 1in pad
o
R
q
JC
:6 C/W
2
0.1
0.01
T
C
=25 C
o
0.1
1
10
100 300
1E-4
1E-6
1E-5
1E-4
1E-3
0.01
0.1
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - February, 2016
5
www.sinopowersemi.com
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