SM2313PSA
®
P-Channel Enhancement Mode MOSFET
Features
·
-20V/-3.5A,
R
DS(ON)
= 73mW (Max.) @ V
GS
=-4.5V
R
DS(ON)
= 110mW (Max.) @ V
GS
=-2.5V
R
DS(ON)
= 193mW (Max.) @ V
GS
=-1.8V
Pin Description
D
S
G
·
·
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Top View of SOT-23-3
D
Applications
·
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
G
S
P-Channel MOSFET
Ordering and Marking Information
SM2313PS
Package Code
A : SOT-23-3
Operating Junction Temperature Range
C : -55 to 150
o
C
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XX - Lot Code
Assembly Material
Handling Code
Temperature Range
Package Code
SM2313PS A :
B13XX
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines
“Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
1
www.sinopowersemi.com
SM2313PSA
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
qJA
*
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300ms Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=70°C
t
£
10s
Steady state
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
-20
±12
-3.5
-2.8
-14.2
-11.4
-1
150
-55 to 150
1
0.7
90
125
®
Unit
V
A
°C
W
°C/W
Note: *Surface Mounted on 1in
2
pad area, t
£
10sec.
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Parameter
(T
A
= 25°C unless otherwise noted)
Test Conditions
V
GS
=0V, I
DS
=-250mA
V
DS
=-16V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
D S
=-250mA
V
GS
=±12V, V
DS
=0V
V
GS
=-4.5V, I
DS
=-3.5A
Min.
-20
-
-
-0.5
-
-
-
-
-
-
-
-
Typ.
-
-
-
-0.7
-
58
82
130
-0.7
5.2
0.7
1.8
Max.
-
-1
-30
-1
±100
73
110
193
-1
-
-
-
nC
V
mW
Unit
V
mA
V
nA
R
D S(ON) a
Drain-Source On-State Resistance V
GS
=-2.5V, I
DS
=-2.2A
V
GS
=-1.8V, I
DS
=-0.9A
V
SD a
Q
g
Q
gs
Q
gd
Diode Forward Voltage
b
I
SD
=-1A, V
GS
=0V
Gate Charge Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-3.5A
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
2
www.sinopowersemi.com
SM2313PSA
Electrical Characteristics (Cont.)
Symbol
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
t
rr
Q
rr
Parameter
b
®
(T
A
= 25°C unless otherwise noted)
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
4.2
357
72
61
5.6
13.2
21
4.5
12
6.6
Max.
-
-
-
-
-
-
-
-
-
-
nC
ns
pF
Unit
W
Test Conditions
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=-10V,
Frequency=1.0MHz
V
DD
=-10V, R
L
=10W,
I
DS
=-1A, V
GEN
=-4.5V,
R
G
=6W
I
SD
=-3.5A, dl
SD
/dt =100A/µs
Dynamic Characteristics
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Note a : Pulse test ; pulse width£300
m
s, duty cycle£2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
3
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SM2313PSA
Typical Operating Characteristics
®
Power Dissipation
1.2
4.0
3.5
3.0
Drain Current
1.0
P
tot
- Power (W)
0.8
-I
D
- Drain Current (A)
o
2.5
2.0
1.5
1.0
0.5
0.6
0.4
0.2
T
A
=25 C
0.0
0
20
40
60
80
100 120 140 160
T
A
=25 C,V
G
=-4.5V
0.0
0
20
40
60
80
100 120 140 160
o
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
50
Thermal Transient Impedance
2
Normalized Transient Thermal Resistance
1
0.2
0.1
0.05
0.02
Duty = 0.5
-I
D
- Drain Current (A)
R
ds
(o
n)
Li
m
it
10
1
300
m
s
1ms
10ms
0.1
0.01
0.1
100ms
1s
DC
T
A
=25 C
o
Single Pulse
Mounted on 1in pad
o
R
q
JA
: 90 C/W
2
0.01
0.01
0.1
1
10
100
0.01
1E-4
1E-3
0.01
0.1
1
10 30
-V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
4
www.sinopowersemi.com
SM2313PSA
Typical Operating Characteristics (Cont.)
®
Output Characteristics
14
12
10
8
-2V
6
4
2
0
0.0
-1.8V
V
GS
=-2.5,-3,-4,-5,
-6,-7,-8,-9,-10V
240
210
Drain-Source On Resistance
V
GS
=-1.8V
R
DS(ON)
- On - Resistance (mW)
180
150
120
90
60
30
0
V
GS
=-4.5V
-I
D
- Drain Current (A)
V
GS
=-2.5V
-1.5V
0.5
1.0
1.5
2.0
2.5
3.0
0
2
4
6
8
10
12
14
-V
DS
- Drain-Source Voltage (V)
-I
D
- Drain Current (A)
Gate-Source On Resistance
200
I
DS
=-3.5A
1.4
1.6
Gate Threshold Voltage
I
DS
= -250
m
A
Normalized Threshold Voltage
R
DS(ON)
- On Resistance (mW)
160
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
120
80
40
0
1
2
3
4
5
6
7
8
9
10
0
25
50
75
100 125 150
-V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
5
www.sinopowersemi.com
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