SM4307PSK
®
P-Channel Enhancement Mode MOSFET
Features
·
-30V/-11A,
R
DS(ON)
= 18mW(max.) @ V
GS
=-10V
R
DS(ON)
= 30mW(max.) @ V
GS
=-4.5V
Pin Description
D
D
D
D
S
·
Reliable and Rugged
·
Lead Free and Green Devices Available
(RoHS Compliant)
S
S
G
Top View of SOP-8
( 5,6,7,8 )
D DDD
Applications
·
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
(4)
G
S S S
(1, 2, 3)
Ordering and Marking Information
SM4307PS
Assembly Material
Handling Code
Temperature Range
Package Code
SM4307PS K :
4307
XXXXX
P-Channel MOSFET
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150
o
C
Handling Code
TR : Tape & Reel (2500pcs/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines
“Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - December, 2013
1
www.sinopowersemi.com
SM4307PSK
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
Da
I
DMa
I
Sa
I
ASb
E
ASb
T
J
T
STG
P
Da
R
qJA
a,c
R
qJL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (V
GS
=-10V)
300ms Pulsed Drain Current (V
GS
=-10V)
Diode Continuous Forward Current
Avalanche Current, Single pulse (L=0.3mH)
Avalanche Energy, Single pulse (L=0.3mH)
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Lead
2
®
(T
A
= 25°C Unless Otherwise Noted)
Rating
-30
±25
T
A
=25°C
T
A
=70°C
-11
-8.5
-44
-3
-20
60
150
-55 to 150
T
A
=25°C
T
A
=70°C
t
£
10s
Steady State
Steady State
3.1
2
40
75
24
°C/W
mJ
°C
W
A
Unit
V
Parameter
Note a：Surface Mounted on 1in pad area, t
£
10sec.
Note b：UIS tested and pulse width limited by maximum junction temperature 150
o
C (initial temperature T
j
=25
o
C).
Note c：Maximum under Steady State conditions is 75
°C/W.
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Parameter
(T
A
= 25°C Unless Otherwise Noted)
Test Conditions
SM4307PSK
Min.
-30
-
-
-1.5
-
-
-
-
-
-
Typ.
-
-
-
-2
-
14
22
-0.7
19
10
Max.
-
-1
-30
-2.5
±100
18
30
-1
-
-
Unit
V
GS
=0V, I
DS
=-250mA
V
DS
=-24V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=-250mA
V
GS
=±25V, V
DS
=0V
V
GS
=-10V, I
DS
=-11A
V
GS
=-4.5V, I
DS
=-4A
I
SD
=-1A, V
GS
=0V
I
SD
=-11A,
di
SD
/dt=100A/ms
V
mA
V
nA
mW
R
DS(ON) d
Drain-Source On-state Resistance
Diode Characteristics
V
SD
t
rr
e
e
d
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
ns
nC
Q
rr
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - December, 2013
2
www.sinopowersemi.com
SM4307PSK
Electrical Characteristics (Cont.)
Symbol
Parameter
e
®
(T
A
= 25°C Unless Otherwise Noted)
SM4307PSK
Min.
-
-
-
-
-
-
-
-
Typ.
3
1000
210
150
8
12
32
16
21
2.6
6.2
Max.
-
-
-
-
-
-
-
-
-
-
-
nC
ns
pF
Test Conditions
Unit
Dynamic Characteristics
R
g
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
e
V
GS
=0V, V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=-15V,
Frequency=1.0MHz
V
DD
=-15V, R
L
=15W,
I
DS
=-1A, V
GEN
=-10V,
R
G
=6W
W
Gate Charge Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=-15V, V
GS
=-10V,
I
DS
=-11A
-
-
-
Note d：Pulse test ; pulse width£300ms, duty cycle£2%.
Note e：Guaranteed by design, not subject to production testing.
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - December, 2013
3
www.sinopowersemi.com
SM4307PSK
Typical Operating Characteristics
®
Power Dissipation
3.5
3.0
2.5
12
Drain Current
10
-I
D
- Drain Current (A)
P
tot
- Power (W)
8
2.0
1.5
1.0
0.5
0.0
T
A
=25 C
0
20
40
60
80
100 120 140 160
o
6
4
2
T
A
=25 C,V
G
=-10V
0
20
40
60
80
100 120 140 160
o
0
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
300
2
Thermal Transient Impedance
Normalized Transient Thermal Resistance
100
Rd
s(
on
)L
im
it
1
Duty = 0.5
0.2
0.1
-I
D
- Drain Current (A)
10
300
m
s
1ms
0.1
0.01
0.05
0.02
1
10ms
100ms
0.1
1s
DC
0.01
Single Pulse
0.01
0.01
T
A
=25 C
o
0.1
1
10
100 300
1E-3
1E-4
Mounted on 1in pad
o
R
q
JA
: 40 C/W
2
1E-3
0.01
0.1
1
10
100
-V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - December, 2013
4
www.sinopowersemi.com
SM4307PSK
Typical Operating Characteristics (Cont.)
®
Output Characteristics
45
40
35
V
GS
= -4.5,-5,-6,-7,
50
45
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mW)
-8,-9,-10V
-4V
40
35
30
25
20
15
10
5
V
GS
=-10V
V
GS
=-4.5V
-I
D
- Drain Current (A)
30
25
20
-3.5V
15
10
5
0
0.0
0.5
1.0
1.5
-3V
2.0
2.5
3.0
0
0
10
20
30
40
50
-V
DS
- Drain-Source Voltage (V)
-I
D
- Drain Current (A)
Gate-Source On Resistance
70
60
I
DS
=-11A
1.6
1.4
Gate Threshold Voltage
I
DS
=-250
m
A
Normalized Threshold Voltage
R
DS(ON)
- On Resistance (mW)
50
40
30
20
10
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
2
3
4
5
6
7
8
9
10
0
25
50
75
100 125 150
-V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - December, 2013
5
www.sinopowersemi.com
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