SM2363PSA
®
P-Channel Enhancement Mode MOSFET
Features
·
-60V/-1.8A,
R
DS(ON)
= 225mW(max.) @ V
GS
=-10V
R
DS(ON)
= 300mW(max.) @ V
GS
=-4.5V
Pin Description
D
S
G
·
·
·
·
ESD Protection
100% UIS+R
g
Tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
D
Top View of SOT-23
Applications
·
·
Power Management in DC/DC Converter.
Load switch.
G
S
P-Channel MOSFET
Ordering and Marking Information
SM2363PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
A : SOT-23
Operating Junction Temperature Range
C : -55 to 150
o
C
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XX - Lot Code
SM2363PS A :
B63XX
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines
“Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2015
1
www.sinopowersemi.com
SM2363PSA
Absolute Maximum Ratings
Symbol
Common Ratings
V
DSS
V
GSS
T
J
T
STG
I
S
I
D
*
®
(T
A
= 25°C Unless Otherwise Noted)
Rating
-60
±20
150
-55 to 150
T
A
=25°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=25°C
T
A
=70°C
t
£
10s
Steady State
L=0.5mH
L=0.5mH
-1
-1.8
-1.5
-7.2
1.56
1
80
125
6
9
Unit
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
V
°C
A
A
A
W
°C/W
A
mJ
I
DM a
P
D
R
qJA
c
I
AS b
E
AS b
Note *：t
£
10s.
Note a：Pulse
width is limited by maximum junction temperature.
Note b：UIS tested and pulse width limited by maximum junction temperature 150
o
C (initial temperature T
j
=25
o
C).
Note
c：Surface Mounted on 1in
2
pad area.
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2015
2
www.sinopowersemi.com
SM2363PSA
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
V
GS
=0V, I
DS
=250mA
V
DS
=-48V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250mA
V
GS
=±20V, V
DS
=0V
V
GS
=-10V, I
DS
= -1.8A
V
GS
=-4.5V, I
DS
= -1.4A
I
SD
=-1A, V
GS
=0V
I
SD
=-1.8A,
dl
SD
/dt=100A/ms
V
GS
=0V,V
DS
=0V,f=1MHz
V
GS
=0V,
V
DS
=-30V,
Frequency=1.0MHz
-60
-
-
-1
-
-
-
-0.5
-
-
-
-
-
-
-
V
DD
=-30V, R
L
=-30W,
I
DS
=-1A, V
GEN
=-10V,
R
G
=6W
e
®
(T
A
= 25°C Unless Otherwise Noted)
Test Conditions
Min.
Typ.
-
-
-
-2
-
180
220
-0.8
20
20
Parameter
Max.
-
1
30
-3
±10
225
300
-1
-
-
-
380
-
-
13
9
31
15
Unit
V
mA
V
uA
mW
mW
V
ns
nC
W
pF
R
DS(ON) d
Drain-Source On-state Resistance
Diode Characteristics
V
SD d
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
d
Q
rr
R
G
C
iss
C
oss
C
rss
t
d(O N)
t
r
t
d(OFF)
t
f
Dynamic Characteristics
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
7
290
31
17
7
5
17
8
-
-
-
ns
Gate Charge Characteristics
Q
g
Q
g
Q
gs
Q
gd
Total Gate Charge
Total Gate Charge
V
DS
=-30V, V
GS
=-4.5V,
I
DS
=-1.8A
V
DS
=-30V, V
GS
=-10V,
I
DS
=-1.8A
-
-
-
-
3.5
7.2
1.3
1.4
-
10
-
-
nC
Gate-Source Charge
Gate-Drain Charge
Note d：Pulse test; pulse width£300ms, duty cycle£2%.
Note e：Guaranteed by design, not subject to production testing.
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2015
3
www.sinopowersemi.com
SM2363PSA
Typical Operating Characteristics
®
Power Dissipation
1.8
2.0
Drain Current
1.5
1.6
P
tot
- Power (W)
1.2
-I
D
- Drain Current (A)
o
1.2
0.9
0.8
0.6
0.3
T
A
=25 C
0
20
40
60
80
100 120 140 160
0.4
T
A
=25 C,V
G
=-10V
0
20
40
60
80
100 120 140 160
o
0.0
0.0
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
30
2
Thermal Transient Impedance
Normalized Transient Thermal Resistance
10
ds
1
0.1
0.05
Duty = 0.5
0.2
-I
D
- Drain Current (A)
R
it
im
)L
n
(o
300
m
s
1ms
1
0.1
0.01
0.02
0.1
10ms
100ms
0.01
Single Pulse
0.01
1s
DC
T
A
=25 C
o
Mounted on 1in pad
2
1E-3
0.1
1
10
100 300
1E-3
1E-4 1E-3 0.01
0.1
1
10
100 1000
-V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
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Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2015
4
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SM2363PSA
Typical Operating Characteristics (Cont.)
®
Output Characteristics
8
7
6
V
GS
=-4.5,-5,-6,-7,
-8,-9,-10V
-4V
400
350
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mW)
-I
D
- Drain Current (A)
300
250
200
150
100
50
V
GS
=-4.5V
V
GS
=-10V
5
-3.5V
4
3
2
1
0
0.0
-2.5V
0.5
1.0
1.5
2.0
2.5
3.0
-3V
0
1
2
3
4
5
6
7
-V
DS
- Drain-Source Voltage (V)
-I
D
- Drain Current (A)
Gate-Source On Resistance
1200
I
DS
=-1.8A
1.6
1.4
Gate Threshold Voltage
I
DS
= -250
m
A
Normalized Threshold Voltage
R
DS(ON)
- On Resistance (mW)
1000
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
800
600
400
200
0
2
3
4
5
6
7
8
9
10
0
25
50
75
100 125 150
-V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2015
5
www.sinopowersemi.com
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