SM1402NSS
®
N-Channel Enhancement Mode MOSFET
Features
•
60V/0.4A,
R
DS(ON)
= 2.2Ω(max.) @ V
GS
=10V
R
DS(ON)
= 2.6Ω(max.) @ V
GS
=4.5V
Pin Description
D
S
G
•
ESD Protection
•
Reliable and Rugged
•
Lead Free and Green Devices Available
(RoHS Compliant)
Top View of SC-70
D
Applications
•
•
High Speed Switching.
Analog Switching Application.
G
S
N-Channel MOSFET
Ordering and Marking Information
SM1402NS
Package Code
S : SC-70
Operating Junction Temperature Range
C : -55 to 150
o
C
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
Assembly Material
Handling Code
Temperature Range
Package Code
SM1402NS S :
02
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines
“Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
Sinopower Semiconductor, Inc.
Rev. A.1 - August, 2015
1
www.sinopowersemi.com
SM1402NSS
Absolute Maximum Ratings
Symbol
Common Ratings
V
DSS
V
GSS
T
J
T
STG
I
S
I
D
I
DM a
P
D
R
θJA
b
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=25°C
T
A
=70°C
Steady State
60
±20
150
-55 to 150
0.2
0.4
0.32
1.6
0.75
0.48
165
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
®
Unit
V
°C
A
A
A
W
°C/W
Note a：Pulse width limited by max. junction temperature.
2
Note b：Surface Mounted on 1in pad area.
Copyright
©
Sinopower Semiconductor, Inc.
Rev. A.2 - August, 2015
2
www.sinopowersemi.com
SM1402NSS
Electrical Characteristics (Cont.)
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
V
GS
=0V, I
DS
=250µA
V
DS
=48V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=100mA
V
GS
=4.5V, I
DS
=50mA
I
SD
=100mA, V
GS
=0V
I
SD
=1A, dl
SD
/dt=100A/µs
60
-
-
1
-
-
-
-
-
-
-
-
-
2
-
1.8
2
0.8
13
8
-
1
30
2.5
±10
2.2
2.6
1.3
-
-
Parameter
(T
A
= 25°C unless otherwise noted)
Min.
Typ.
Max.
®
Test Conditions
Unit
V
µA
V
uA
Ω
Ω
V
ns
nC
R
DS(ON) d
Drain-Source On-state Resistance
Diode Characteristics
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
t
d(ON )
t
r
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Dynamic Characteristics
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=30V, R
L
=300Ω,
I
DS
=0.1A, V
GEN
=10V,
R
G
=6Ω
V
GS
=0V,
V
DS
=30V,
Frequency=1.0MHz
-
-
-
-
-
-
-
24
5.5
2.5
3
7
10
12
32
-
-
6
13
18
22
ns
pF
Gate Charge Characteristics
d
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=30V, V
GS
=10V,
I
DS
=1A
-
-
-
1.5
0.6
0.3
2.1
-
-
nC
Note c：Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
Note d：Guaranteed by design, not subject to production testing.
Copyright
©
Sinopower Semiconductor, Inc.
Rev. A.2 - August, 2015
3
www.sinopowersemi.com
SM1402NSS
Typical Operating Characteristics
Power Dissipation
0.90
0.48
®
Drain Current
0.75
0.40
P
tot
- Power (W)
0.60
I
D
- Drain Current (A)
o
0.32
0.45
0.24
0.30
0.16
0.15
T
A
=25 C
0
20
40
60
80
100 120 140 160
0.08
T
A
=25 C,V
G
=10V
0
20
40
60
80
100 120 140 160
o
0.00
0.00
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature
Safe Operation Area
3
1
it
ds
(o
n)
Li
m
Thermal Transient Impedance
Normalized Transient Thermal Resistance
2
1
0.2
0.1
0.05
Duty = 0.5
I
D
- Drain Current (A)
R
0.1
300
µ
s
1ms
10ms
100ms
0.02
0.01
0.01
DC
0.1
Single Pulse
Mounted on 1in pad
o
R
θ
JA
: 165 C/W
2
1E-3
0.1
T
A
=25 C
O
1
10
100
300
0.05
1E-4 1E-3 0.01
0.1
1
10
100 1000
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
©
Sinopower Semiconductor, Inc.
Rev. A.2 - August, 2015
4
www.sinopowersemi.com
SM1402NSS
Typical Operating Characteristics (Cont.)
®
Output Characteristics
1.0
V
GS
=4.5,5,6,7,8,9,10V
4V
4.0
0.8
4.5
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mΩ)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
V
GS
=10V
V
GS
=4.5V
I
D
- Drain Current (A)
0.6
3.5V
0.4
3V
0.2
2.5V
0.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Gate-Source On Resistance
10
I
DS
=100mA
8
1.2
1.4
Gate Threshold Voltage
I
DS
=250
µ
A
R
DS(ON)
- On - Resistance (mΩ)
Normalized Threshold Voltage
6
1.0
4
0.8
2
0.6
0
2
3
4
5
6
7
8
9
10
0.4
-50 -25
0
25
50
75
100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
©
Sinopower Semiconductor, Inc.
Rev. A.2 - August, 2015
5
www.sinopowersemi.com
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