SM4512NHKP
®
N-Channel Enhancement Mode MOSFET
Features
·
30V/80A,
R
DS(ON)
= 1.9mW (Max.) @ V
GS
=10V
R
DS(ON)
= 3mW (Max.) @ V
GS
=4.5V
Pin Description
D
D D
D
·
100% UIS + R
g
Tested
·
Reliable and Rugged
·
Lower Q
g
and Q
gd
for high-speed switching
·
Lower R
DS(ON)
to Minimize Conduction Losses
·
Lead Free and Green Devices Available
(RoHS Compliant)
S S
S
G
Pin 1
DFN5x6A-8_EP
(5,6,7,8)
DD DD
Applications
·
Power Management in Desktop Computer or
DC/DC Converters.
(4) G
S S S
( 1, 2, 3 )
N-Channel MOSFET
Ordering and Marking Information
SM4512NH
Assembly Material
Handling Code
Temperature Range
Package Code
4512NH
XXXXX
Package Code
KP : DFN5x6A-8_EP
Operating Junction Temperature Range
C : -55 to 150
o
C
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
SM4512NH KP :
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines
“Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2017
1
www.sinopowersemi.com
SM4512NHKP
Absolute Maximum Ratings
Symbol
Common Ratings
V
DSS
V
GSS
T
J
T
STG
I
S
I
D
a
®
(T
A
= 25°C Unless Otherwise Noted)
Rating
30
±20
150
-55 to 150
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=25°C
T
C
=100°C
Steady State
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
t
£
10s
Steady State
L=0.1mH
L=0.1mH
42.5
80*
75
160
78
31
1.6
28
22
2.3
1.5
20
55
43
92
W
°C/W
A
W
°C/W
A
mJ
A
Unit
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Continuous Drain Current
Maximum Power Dissipation
V
°C
I
DM
b
P
D
R
qJC
I
D
P
D
c
c
R
qJA
I
AS
c
Thermal Resistance-Junction to Ambient
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
d
d
E
AS
Note a,*：Max. continue current is limited by bonding wire.
Note b：Pulse width is limited by max. junction temperature.
Note c：R
q
JA
steady state t=999s.
Note d：UIS tested and pulse width limited by maximum junction temperature 150
o
C (initial temperature T
j
=25
o
C).
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2017
2
www.sinopowersemi.com
SM4512NHKP
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
BV
DSSt
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Drain-Source Breakdown Voltage
(transient)
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
V
GS
=0V, I
DS
=250mA
VGS=0V, I
D(aval)
=40A
T
case
=25°C, t
transient
=100ns
V
DS
=24V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250mA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=20A
R
DS(ON) e
Drain-Source On-state Resistance
Gfs
V
SD e
t
rr
t
a
t
b
Q
rr
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Forward Transconductance
Diode Forward Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DS
=15V, V
GS
=10V,
I
DS
=20A
V
DS
=15V, V
GS
=4.5V,
I
DS
=20A
V
DD
=15V, R
L
=15W,
I
DS
=1A, V
GEN
=10V,
R
G
=6W
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
I
SD
=20A, dl
SD
/dt=100A/ms
T
J
=125°C
V
GS
=4.5V, I
DS
=12A
V
DS
=5V, I
DS
=15A
I
SD
=20A, V
GS
=0V
Diode Characteristics
-
-
-
-
-
-
-
-
-
-
-
-
-
0.8
50
23.5
27.5
45
0.9
2820
1910
140
15.5
11
35
40
1.1
-
-
-
-
2
3666
2674
210
-
-
-
-
30
34
-
-
1.3
-
-
-
-
-
-
-
-
-
1.6
-
1.5
2.2
2.2
32
-
-
1
30
2.3
±100
1.9
-
3
-
Parameter
®
(T
A
= 25°C unless otherwise noted)
Test Conditions
Min.
Typ.
Max.
Unit
V
V
mA
V
nA
mW
S
V
ns
nC
W
pF
Dynamic Characteristics
ns
Gate Charge Characteristics
Q
g
Q
g
Q
gth
Q
gs
Q
gd
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
-
-
44.5
21.2
2.9
4.3
8.3
57.8
-
-
-
-
nC
Note e：Pulse test ; pulse width£300ms, duty cycle£2%.
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2017
3
www.sinopowersemi.com
SM4512NHKP
Typical Operating Characteristics
Power Dissipation
90
90
®
Drain Current
75
75
60
I
D
- Drain Current (A)
P
tot
- Power (W)
60
45
45
30
30
15
T
C
=25 C
0
20
40
60
80
100 120 140 160
o
15
T
C
=25 C,V
G
=10V
0
20
40
60
80 100 120 140 160
o
0
0
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature
Safe Operation Area
Normalized Transient Thermal Resistance
300
100
im
it
Thermal Transient Impedance
3
1
0.2
0.1
0.05
0.02
Duty = 0.5
I
D
- Drain Current (A)
Rd
s(
on
)L
100
m
s
300
m
s
1ms
0.1
10
0.01
0.01
1
DC
1E-3
Single Pulse
0.1
0.01
T
C
=25 C
o
0.1
1
10
100
1E-4
1E-6
R
q
JC
:1.6 C/W
o
1E-5
1E-4
1E-3
0.01
0.1
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2017
4
www.sinopowersemi.com
SM4512NHKP
Typical Operating Characteristics (Cont.)
Safe Operation Area
300
2
®
Thermal Transient Impedance
Normalized Transient Thermal Resistance
100
)
on
s(
Rd
it
im
L
1
0.2
0.1
0.05
Duty = 0.5
I
D
- Drain Current (A)
10
300
m
s
1ms
0.1
0.02
0.01
1
10ms
0.01
Single Pulse
Mounted on 1in pad
o
R
q
JA
:55 C/W
2
0.1
100ms
0.01
0.01
T
A
=25 C
O
DC
1s
0.1
1
10
100
1E-3
1E-4 1E-3 0.01 0.1
1
10
100 1000
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Output Characteristics
160
140
120
V
GS
=3.5,4,5,6,7,8,9,10V
4.0
3.5
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mW)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
=10V
V
GS
=4.5V
I
D
- Drain Current (A)
100
80
60
40
20
0
0.0
2.5V
0.5
1.0
1.5
2.0
2.5
3.0
3V
V
DS
- Drain - Source Voltage (V)
0
25
I
D
- Drain Current (A)
50
75
100
125
150
Copyright
ã
Sinopower Semiconductor, Inc.
Rev. A.2 - January, 2017
5
www.sinopowersemi.com
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