APM4500AK
Dual Enhancement Mode MOSFET (N- and P-Channel)
Features
•
N-Channel
20V/8A,
R
DS(ON)
=22mΩ(typ.) @ V
GS
= 4.5V
R
DS(ON)
=30mΩ(typ.) @ V
GS
= 2.5V
Pin Description
D1
D1
D2
D2
S1
G1
S2
G2
•
P-Channel
-20V/-4.3A,
R
DS(ON)
=80mΩ(typ.) @ V
GS
=-4.5V
R
DS(ON)
=105mΩ(typ.) @ V
GS
=-2.5V
Top View of SOP
−
8
(8)
D1
(7)
D1
•
•
•
(6)
D2
(5)
D2
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
(2)
G1
(4)
G2
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
S1
(1)
S2
(3)
N-Channel
P-Channel
Ordering and Marking Information
APM4500A
Assembly Material
Handling Code
Temp. Range
Package Code
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150
°
C
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
XXXXX - Date Code
APM4500A K :
APM4500A
XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which
are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for
MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to mean lead-free (RoHS compliant) and halogen
free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by
weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
ANPEC Electronics Corp.
Rev. A.3 - May., 2008
1
www.anpec.com.tw
APM4500AK
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θJA
*
Note:
*Surface Mounted on 1in
pad area, t
≤
10sec.
2
(T
A
= 25°C unless otherwise noted)
N Channel
20
±12
V
GS
=10V(N)
V
GS
=-10V(P)
8
30
2.5
150
-55 to 150
T
A
=25°C
T
A
=100°C
2
0.8
62.5
W
°C/W
P Channel
-20
±12
-4.3
-16
-2
A
°C
V
A
Unit
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Power Dissipation
Thermal Resistance-Junction to Ambient
Electrical Characteristics
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
Test Conditions
APM4500AK
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
I
DSS
I
DSS
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Zero Gate Voltage Drain
Current
V
GS
=0V, I
DS
=250µA
V
GS
=0V, I
DS
=-250µA
V
DS
=16V, V
GS
=0V
T
J
=85°C
V
DS
=-16V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±10V, V
DS
=0V
V
GS
=4.5V, I
DS
=8A
R
DS(ON) a
Drain-Source On-State
Resistance
V
GS
=-4.5V, I
DS
=-4.3A
V
GS
=2.5V, I
DS
=5.2A
V
GS
=-2.5V, I
DS
=-2A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
-20
-
-
-
-
0.5
-0.5
-
-
-
-
-
-
0.7
-0.75
-
-
22
80
30
105
-
-
1
30
-1
-30
1
-1
±10
±10
26
90
36
115
mΩ
V
µA
V
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
-
-
-
-
-
-
µA
Copyright
©
ANPEC Electronics Corp.
Rev. A.3 - May., 2008
2
www.anpec.com.tw
APM4500AK
Electrical Characteristics (Cont.)
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
Test Conditions
APM4500AK
Min.
Typ.
Max.
Unit
Diode Characteristics
V
SDa
t
rr
q
rr
Diode Forward Voltage
Reverse Recovery Time
I
SD
=2.5A, V
GS
=0V
I
SD
=-2A, V
GS
=0V
N-Channel
I
SD
=-8A, dl
SD
/dt =100A/µs
N-Ch
P-Ch
N-Ch
P-Ch
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.8
-0.7
15
22
7
6
4
9
740
565
160
125
125
95
5
6
11
13
40
34
23
32
10
6
1
1
4
2.2
1.3
-1.3
-
-
-
-
-
-
-
-
-
-
-
-
10
12
21
24
73
62
42
59
13
8
-
-
-
-
nC
ns
pF
V
ns
nC
N-Ch
Reverse Recovery Charge P-Channel
I
SD
=-4.3A, dl
SD
/dt =100A/µs P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Dynamic Characteristics
b
R
G
C
iss
C
oss
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
P-Channel
V
GS
=0V,
V
DS
=-10V,
Frequency=1.0MHz
N-Channel
V
DD
=10V, R
L
=10Ω,
I
DS
=1A, V
GEN
=4.5V,
R
G
=6Ω
P-Channel
V
DD
=-10V, R
L
=10Ω,
I
DS
=-1A, V
GEN
=-4.5V,
R
G
=6Ω
V
GS
=0V,V
DS
=0V,F=1MHz
N-Channel
V
GS
=0V,
V
DS
=10V,
Frequency=1.0MHz
Ω
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Charge Characteristics
b
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
P-Channel
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-4.3A
N-Channel
V
DS
=10V, V
GS
=4.5V,
I
DS
=8A
Notes:
a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright
©
ANPEC Electronics Corp.
Rev. A.3 - May., 2008
3
www.anpec.com.tw
APM4500AK
Typical Characteristics
N-Channel
Power Dissipation
2.5
Drain Current
10
2.0
8
1.5
I
D
- Drain Current (A)
o
P
tot
- Power (W)
6
1.0
4
0.5
T
A
=25 C
0.0
0
20
40
60
80 100 120 140 160
2
T
A
=25 C,V
G
=4.5V
0
0
20
40
60
80 100 120 140 160
o
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
100
2
1
Thermal Transient Impedance
Duty = 0.5
0.2
0.1
300
µ
s
I
D
- Drain Current (A)
10
Lim
it
Rd
s(o
n)
1ms
10ms
0.1
0.05
0.02
0.01
1
100ms
1s
0.01
0.1
Single Pulse
DC
0.01
0.01
T
A
=25 C
O
0.1
1
10
100
1E-3
1E-4
Mounted on 1in pad
o
R
θ
JA
: 62.5 C/W
2
1E-3
0.01
0.1
1
10 30
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
©
ANPEC Electronics Corp.
Rev. A.3 - May., 2008
4
www.anpec.com.tw
APM4500AK
Typical Characteristics (Cont.)
N-Channel
Output Characteristics
20
18
16
V
GS
= 3, 4, 5, 6, 7, 8, 9, 10V
2.5V
Drain-Source On Resistance
60
R
DS(ON)
- On - Resistance (mΩ)
50
V
GS
=2.5V
I
D
- Drain Current (A)
14
12
10
8
6
4
2
0
0.0
0.5
1.0
1.5
1.5V
2.0
2.5
3.0
2V
40
30
V
GS
=4.5V
20
10
0
0
4
8
12
16
20
V
DS
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
Drain-Source On Resistance
40
I
D
=8A
1.6
1.4
Gate Threshold Voltage
I
DS
=250
µ
A
R
DS(ON)
- On - Resistance (mΩ)
Normalized Threshold Voltage
35
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
30
25
20
15
10
1
2
3
4
5
6
7
8
9
10
0
25
50
75 100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
©
ANPEC Electronics Corp.
Rev. A.3 - May., 2008
5
www.anpec.com.tw
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