SM5306
High-Efficiency Dual-String with up to 10-WLED
White LED Driver
Description
The SM5306 is a current mode boost converter which
supplies the power and controls current in up to two strings
2
of 10 LEDs per string. Programming is done over an I C-
compatible interface. The maximum LED current is
adjustable from 5mA to 28.5mA. At any given maximum
LED current the LED brightness is further adjusted with
exponential or linear dimming steps. Additionally, pulsed
width modulation (PWM) brightness control can be enabled
allowing for LED current adjustment by a logic level PWM
signal.
The boost switching frequency is programmable at 500kHz
for low switching loss performance or 1MHz to allow the
use of tiny low profile inductors. A setting for a 10% offset of
these frequencies is available. Over Voltage Protection is
programmable at 16V, 24V, 32V, or 40V to accommodate a
wide variety of LED configurations and schottky
diode/output capacitor combinations.
The SM5306 is available in a 12-bump, 1.65mm x 1.43mm
WLCSP package.
Features
Drives up to Two String of 10 Series LEDs
11-bit Programmable Dimming Resolution
Exponential or Linear Brightness Control
PWM Brightness Control for CABC Operation
Independent Current Control per String
Internal Soft-Start Limits Inrush Current
Wide 2.5V to 5.5V Input Voltage Range
Adaptive Headroom Control
Selectable Boost Frequency of 500kHz or 1MHz with
Optionally Additional Offset
CONFIDENTIAL - Target Datasheet
12-Bump 1.65mm x 1.43mm WLCSP Package
Protections
. Programmable 16V/24V/32V/40V Over-Voltage
Protection
. LED Open/Short Circuit Protection
. Thermal Shutdown
. Current Limit
Applications
Mobile and Smart Phones LCD Backlight
Tablet LCD Backlight
Portable Devices LCD Backlight
Evaluation Board Request
Will be available
Ordering Information
Part
SM5306
Temp. Range
-40°C to +85°C
Pb-Free
Yes
Package
12 WLCSP
0.4mm pitch
© 2014 Silicon Mitus, Inc.
July 2014 – Rev. 0.0.4
www.siliconmitus.com
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SM5306
Pin Assignments
Top view
Bottom view
SW
SW
SCL
SDA
A
B
C
CONFIDENTIAL - Target Datasheet
SDA
SCL
A
B
C
D
HWEN
INTN
GND
GND
INTN
HWEN
PWM
SEL
IN
IN
SEL
PWM
D
OVP
ILED2
ILED1
ILED1
ILED2
OVP
1
Pin Description
Pin
A1
A2
A3
B1
B2
B3
C1
C2
C3
D1
D2
D3
Name
SDA
SCL
SW
HWEN
INTN
GND
PWM
SEL
IN
OVP
ILED2
ILED1
2
3
3
2
1
Description
Data I/O
pin for the I C serial interface.
Clock Input
pin for the I C serial interface.
Switching Node
of boost converter. SW pin is the drain of power N-MOSFET. Long traces
of inductor to this pin and this pin to rectifying diode should be avoided.
IC Enable Input.
Drive this pin high to enable the device. Drive this pin low to force the
device into a low power shutdown. HWEN is a high-impedance input and cannot be left
floating.
Interrupt Output
for fault status change. Open drain active low signal.
Ground.
External PWM Input
for brightness control.
I2C Address Select.
Ground selects address 0x36h and VIN selects address 0x38h.
IC Supply Input.
In addition to using bulk capacitors of sufficient capacity, it is highly
recommended to use the shunt capacitor of low ESR/ESL to bypass high frequency noise.
Place shunt capacitor as close as possible to this pin.
Over Voltage Protection Pin.
This pin is sensing the output voltage of the boost
converter. The boost converter output is connected to this pin directly.
LED Current Sink Regulation Input 2.
LED Current Sink Regulation Input 1.
2
2
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© 2014 Silicon Mitus, Inc.
July 2014 – Rev. 0.0.4
SM5306
Operational Diagram
V
LED
IN
SW
Bandgap Voltage/Current
Reference
Boost
Controller
GND
OVP
LED Open Protection
INTN
Over Voltage Protection
Thermal Shutdown
Protections
Lowest V
ILED
Detector
CONFIDENTIAL - Target Datasheet
LED Open
Detector
ILED1
ILED2
SDA
SCL
SEL
PWM
HWEN
PWM
Sampler
Brightness
Control
I2C Interface & Control
Current Source
© 2014 Silicon Mitus, Inc.
July 2014 – Rev. 0.0.4
www.siliconmitus.com
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SM5306
Absolute Maximum Ratings
Stress(es) beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the
following operational sections of the specifications is not implied. Exposure to absolute maximum rating condition(s) for
extended periods may affect device reliability.
Parameter
IN, HWEN, PWM, SCL, SDA, INTN, SEL to GND
1)
SW, OVP, ILED1, ILED2 to GND
1)
ESD Human Body Model
2)
ESD Machine Model
2)
Continuous Power Dissipation (T
A
≤ 25 °C)
3)
Continuous Power Dissipation (T
A
= 70 °C)
3)
Continuous Power Dissipation (T
A
= 80 °C)
3)
Operating Ambient Temperature
Recommended Operation Junction Temperature
Maximum Junction Temperature
Storage Ambient Temperature
Lead Soldering Temperature (within 10s)
-40
-40
-
-65
Lower Limit
-0.3
-0.3
Upper Limit
6
45
2000
200
TBD
TBD
TBD
85
125
150
150
300
Unit
V
V
V
V
W
W
W
°C
°C
°C
°C
°C
CONFIDENTIAL - Target Datasheet
Notes
1) GND: all of the PGNDx, PGNDHx, CGND, MGND and AGND should be within the limit.
2) Human Body Model (HBM) per JESD22-A114 for all pins.
3) Highly depends on the PCB heat dissipation. Tested with the following Thermal Characteristics test conditions.
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© 2014 Silicon Mitus, Inc.
July 2014 – Rev. 0.0.4
SM5306
Electrical Characteristics
V
IN
= 3.6V, T
A
= - 40°C ~ 85°C . Typical values are at T
A
= +25 °C, unless otherwise specified.
*) Specifications over the T
A
range are assured by design, characterized and correlated with process control.
Parameter
GENERAL
Input Voltage Range
Input Supply Current when Disabled
V
S_IN
I
SD_IN1
I
SD_IN2
I
S_IN1
Input Supply Current
VIN Start Threshold Voltage
UVLO Hysteresis
Initialization Timing
I
S_IN2
V
START
HY
UVLO
t
WAIT
2.5V<V
IN
<5.5V, I
2
C shutdown
2.5V<V
IN
<5.5V, HWEN=GND
Not switching
Switching,
Address<02h>[1:0]=”00b”
V
IN
rising
V
STOP
=V
START
-HY
UVLO
1
TBD
2.5
-
1
1
350
1.52
TBD
TBD
2.5
2.5
5.5
4
4
V
μA
μA
μA
mA
V
mV
ms
*)
Symbol
Condition
Min.
Typ.
Max.
Unit
CONFIDENTIAL - Target Datasheet
LOGIC INPUT/OUTPUT (PWM, HWEN, SEL, INTN)
Logic Input Low Voltage (PWM, HWEN, SEL)
Logic Input High Voltage (PWM, HWEN, SEL)
Output Low Voltage (INTN)
PWM Input Frequency
V
IL
V
IH
V
OL
f
PWM
2.3V ≤ V
IN
≤5.5V
2.3V ≤ V
IN
≤5.5V
I
SINK
=1mA
2.3V ≤ V
IN
≤5.5V
10
0
1.2
0.4
V
IN
0.4
80
V
V
V
kHz
PROTECTIONS
Thermal Shutdown Temperature
1)
Thermal Shutdown Hysteresis
1)
Over Voltage Protection Threshold
High
Over Voltage Protection Hysteresis
T
SD
HY
TSD
V
OVP_H1
V
OVP_H2
HY
OVP
I
LIM1
I
LIM2
Switch Current Limit Threshold
I
LIM3
I
LIM4
2.5V<V
IN
<5.5V, V
OVP
rising,
Address<02h>[6:5]=”01b”
2.5V<V
IN
<5.5V, V
OVP
rising,
Address<02h>[6:5]=”11b”
V
OVP_L
(OVP Threshold
Low)=V
OVP_H
-HY
OVP
2.5V<V
IN
<5.5V,
Address<02h>[4:3]=”00b”
2.5V<V
IN
<5.5V,
Address<02h>[4:3]=”01b”
2.5V<V
IN
<5.5V,
Address<02h>[4:3]=”10b”
2.5V<V
IN
<5.5V,
Address<02h>[4:3]=”11b”
TBD
TBD
TBD
TBD
23
39
Temperature rising
140
TBD
24
41
1
600
800
1000
1200
TBD
TBD
TBD
TBD
25
44
°C
°C
V
V
V
mA
mA
mA
mA
BOOST CONVERTER
f
SW1
Switching Frequency
f
SW2
f
SW3
f
SW4
Maximum Duty Cycle
SW On-Resistance
SW Leakage Current
D
MAX
R
DS_ON
I
LK_SW
I
SW
=100mA
V
SW
=45V
Address<02h>[1:0]=”00b”
Address<02h>[1:0]=”10b”
Address<02h>[1:0]=”01b”
Address<02h>[1:0]=”11b”
TBD
TBD
TBD
TBD
500
560
1000
1120
94
250
10
TBD
TBD
TBD
TBD
kHz
kHz
kHz
kHz
%
mΩ
μA
© 2014 Silicon Mitus, Inc.
July 2014 – Rev. 0.0.4
www.siliconmitus.com
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