SVF2N60M/F/T/D_Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N60M/F/T/D is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-cell
TM
structure DMOS technology. The improved
planar stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
∗
∗
∗
∗
∗
2A,600V,R
DS(on)(typ.)
=3.7Ω@V
GS
=10V
Low gate charge
Low C
rss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING SPECIFICATIONS
Part No.
SVF2N60M
SVF2N60F
SVF2N60T
SVF2N60D
SVF2N60DTR
Package Type
TO-251-3L
TO-220F-3L
TO-220-3L
TO-252-2L
TO-252-2L
Marking
SVF2N60M
SVF2N60F
SVF2N60T
SVF2N60D
SVF2N60D
Material
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Tube
Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.21
Page 1 of 10
SVF2N60M/F/T/D_Datasheet
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation(T
C
=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
T
J
T
stg
34
0.27
Rating
SVF2N60M/D
SVF2N60T
600
±30
2.0
8
44
0.35
115
-55½+150
-55½+150
23
0.18
SVF2N60F
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Rating
SVF2N60M/D
3.7
110
SVF2N60T
2.86
62.5
SVF2N60F
5.56
120
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C unless otherwise noted)
Parameter
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
B
VDSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
(Note 2,3)
V
DS
=480V,I
D
=2.0A,
V
GS
=10V
(Note 2,3)
Test conditions
V
GS
=0V, I
D
=250µA
V
DS
=600V, V
GS
=0V
V
GS
=±30V, V
DS
=0V
V
GS
= VDS, I
D
=250µA
V
GS
=10V, I
D
=1.0A
V
DS
=25V,V
GS
=0V,
f=1.0MHZ
V
DD
=300V,I
D
=2.0A,
R
G
=25Ω
Min.
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
3.7
250.1
35.7
1.1
9.2
23.4
15.3
20.1
5.67
1.74
1.99
Max.
--
1.0
±100
4.0
4.2
--
--
--
--
--
--
--
--
--
--
nC
ns
pF
Unit
V
µA
nA
V
Ω
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.21
Page 2 of 10
SVF2N60M/F/T/D_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Test conditions
Integral Reverse P-N
Junction Diode in the
MOSFET
I
S
=2.0A,V
GS
=0V
I
S
=2.0A,V
GS
=0V,
dI
F
/dt=100A/µS
Min.
--
--
--
--
--
Typ.
--
--
--
230
1.0
Max.
2.0
8.0
1.4
--
--
A
V
ns
µC
Unit
Notes:
1.
L=30mH, I
AS
=2.52A, V
DD
=145V, R
G
=25Ω, starting T
J
=25°C;
2.
Pulse Test: Pulse width
≤300μs,Duty
cycle≤2%;
3.
Essentially independent of operating temperature.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.21
Page 3 of 10
Http://www.silan.com.cn
TYPICAL CHARACTERISTICS
Capasistance(pF)
Drain Current – I
D
(A)
Drain-Source On-Resistance
– R
DS(on)
(Ω)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Reverse Drain Current – I
DR
(A)
Drain Current – I
D
(A)
Gate-Source Voltage– V
GS
(V)
SVF2N60M/F/T/D_Datasheet
REV:1.1
2010.10.21
Page 4 of 10
SVF2N60M/F/T/D_Datasheet
TYPICAL CHARACTERISTICS (CONTINUED)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.21
Page 5 of 10
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