®
RT9610C
High Voltage Synchronous Rectified Buck MOSFET Driver
for Notebook Computer
General Description
The RT9610C is a high frequency, dual MOSFET driver
specifically designed to drive two power N-MOSFETS in
a synchronous-rectified buck converter topology. It is
especially suited for mobile computing applications that
require high efficiency and excellent thermal performance.
This driver, combined with Richtek's series of multi-phase
Buck PWM controllers, provides a complete core voltage
regulator solution for advanced microprocessors.
The drivers are capable of driving a 3nF load with fast
rising/falling time and fast propagation delay. This device
implements bootstrapping on the upper gates with only a
single external capacitor. This reduces implementation
complexity and allows the use of higher performance, cost
effective, N-MOSFETs. Adaptive shoot through protection
is integrated to prevent both MOSFETs from conducting
simultaneously.
The RT9610C is available in WDFN-8L 2x2 Package.
Features
Drives Two N-MOSFETs
Adaptive Shoot-Through Protection
0.5Ω On-Resistance, 4A Sink Current Capability
Ω
Supports High Switching Frequency
Tri-State PWM Input for Power Stage Shutdown
Output Disable Function
Integrated Boost Switch
Low Bias Supply Current
VCC POR Feature Integrated
Applications
Core Voltage Supplies for Intel
®
/ AMD
®
Mobile
Microprocessors
High Frequency Low Profile DC/DC Converters
High Current Low Output Voltage DC/DC Converters
High Input Voltage DC/DC Converters
Ordering Information
RT9610C
Package Type
QW : WDFN-8L 2x2 (W-Type)
Lead Plating System
G : Green (Halogen Free and Pb Free)
Note :
Richtek products are :
½
Marking Information
2Q : Product Code
2QW
W : Date Code
RoHS compliant and compatible with the current require-
ments of IPC/JEDEC J-STD-020.
Suitable for use in SnPb or Pb-free soldering processes.
½
Simplified Application Circuit
V
IN
RT9610C
V
CC
VCC
UGATE
BOOT
Enable
PWM
EN
PHASE
V
CORE
PWM
LGATE
GND
Copyright
©
2016 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
DS9610C-01 April 2016
www.richtek.com
1
RT9610C
Pin Configurations
(TOP VIEW)
EN
PHASE
UGATE
BOOT
2
3
4
1
8
7
6
5
9
VCC
LGATE
GND
PWM
WDFN-8L 2x2
Functional Pin Description
Pin No.
1
2
3
4
Pin Name
EN
PHASE
UGATE
BOOT
Pin Function
Enable Pin. When low, both UGATE and LGATE are driven low and the normal
operation is disabled.
Switch Node. Connect this pin to the source of the upper MOSFET and the drain
of the lower MOSFET. This pin provides a return path for the upper gate driver.
Upper Gate Drive Output. Connect to the gate of high side power N-MOSFET.
Floating Bootstrap Supply Pin for Upper Gate Drive. Connect the bootstrap
capacitor between this pin and the PHASE pin. The bootstrap capacitor
provides the charge to turn on the upper MOSFET.
Control Input for Driver. The PWM signal can enter three distinct states during
operation. Connect this pin to the PWM output of the controller.
Ground. The exposed pad must be soldered to a large PCB and connected to
GND for maximum power dissipation.
Lower Gate Drive Output. Connect to the gate of the low side power
N-MOSFET.
Input Supply Pin. Connect this pin to a 5V bias supply. Place a high quality
bypass capacitor from this pin to GND.
5
PWM
6,
GND
9 (Exposed Pad)
7
8
LGATE
VCC
Copyright
©
2016 Richtek Technology Corporation. All rights reserved.
GND
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
2
DS9610C-01 April 2016
RT9610C
Functional Block Diagram
VCC
BOOT
POR
UGATE
EN
VCC
R
PWM
R
Tri-State
Detect
Control
Logic
Shoot-Through
Protection
VCC
LGATE
GND
PHASE
Operation
POR (Power On Reset)
POR block detects the voltage at the VCC pin. When the
VCC pin voltage is higher than POR rising threshold, the
POR pin output voltage (POR output) is high. POR output
is low when VCC is not higher than POR rising threshold.
When the POR pin voltage is high, UGATE and LGATE
can be controlled by PWM input voltage. If the POR pin
voltage is low, both UGATE and LGATE will be pulled to
low.
Tri-State Detect
When both POR output and EN pin voltages are high,
UGATE and LGATE can be controlled by PWM input. There
are three PWM input modes which are high, low, and
shutdown state. If PWM input is within the shutdown
window, both UGATE and LGATE outputs are low. When
PWM input is higher than its rising threshold, UGATE is
high and LGATE is low. When PWM input is lower than
its falling threshold, UGATE is low and LGATE is high.
Control Logic
Control logic block detects whether high side MOSFET
is turned off by monitoring (UGATE - PHASE) voltages
below 1.1V or PHASE voltage below 2V. To prevent the
overlap of the gate drives during the UGATE pulls low and
the LGATE pulls high, low side MOSFET can be turned
on only after high side MOSFET is effectively turned off.
Shoot-Through Protection
Shoot-through protection block implements the dead-time
when both high side and low side MOSFETs are turned
off. With shoot-through protection block, high side and
low side MOSFETs are never turned on simultaneously.
Thus, shoot-through between high side and low side
MOSFETs is prevented.
Copyright
©
2016 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
DS9610C-01 April 2016
www.richtek.com
3
RT9610C
Absolute Maximum Ratings
(Note 1)
Supply Voltage, VCC -------------------------------------------------------------------------------------------------------
−0.3V
to 6V
BOOT to PHASE ------------------------------------------------------------------------------------------------------------
−0.3V
to 6V
PHASE to GND
DC -------------------------------------------------------------------------------------------------------------------------------
−0.3V
to 32V
< 20ns -------------------------------------------------------------------------------------------------------------------------
−8V
to 38V
UGATE to PHASE
DC -------------------------------------------------------------------------------------------------------------------------------
−0.3V
to 6V
< 20ns -------------------------------------------------------------------------------------------------------------------------
−5V
to 7.5V
LGATE to GND
DC -------------------------------------------------------------------------------------------------------------------------------
−0.3V
to 6V
< 20ns -------------------------------------------------------------------------------------------------------------------------
−2.5V
to 7.5V
PWM, EN to GND ----------------------------------------------------------------------------------------------------------
−
0.3V to 6V
Power Dissipation, P
D
@ T
A
= 25°C
WDFN-8L 2x2 ---------------------------------------------------------------------------------------------------------------- 2.19W
Package Thermal Resistance (Note 2)
WDFN-8L 2x2,
θ
JA
----------------------------------------------------------------------------------------------------------- 45.5°C/W
WDFN-8L 2x2,
θ
JC
---------------------------------------------------------------------------------------------------------- 11.5°C/W
Junction Temperature ------------------------------------------------------------------------------------------------------- 150°C
Lead Temperature (Soldering, 10 sec.) --------------------------------------------------------------------------------- 260°C
Storage Temperature Range ----------------------------------------------------------------------------------------------
−65°C
to 150°C
ESD Susceptibility (Note 3)
HBM (Human Body Model) ------------------------------------------------------------------------------------------------ 2kV
(Note 4)
Recommended Operating Conditions
Input Voltage, VIN ----------------------------------------------------------------------------------------------------------- 4.5V to 26V
Control Voltage, VCC ------------------------------------------------------------------------------------------------------- 4.5V to 5.5V
Ambient Temperature Range ----------------------------------------------------------------------------------------------
−40°C
to 85°C
Junction Temperature Range ----------------------------------------------------------------------------------------------
−40°C
to 125°C
Electrical Characteristics
(V
CC
= 5V, T
A
= 25°C, unless otherwise specified)
Parameter
VCC Supply Current
Quiescent Current
Shutdown Current
Symbol
Test Conditions
Min
Typ
Max
Unit
A
A
V
V
mV
I
Q
I
SHDN
V
PORH
PWM Pin Floating, V
EN
= 3.3V
V
EN
= 0V, PWM = 0V, V
CC
= 5V
VCC POR Rising
VCC POR Falling
--
--
--
3.5
--
80
0
4.2
3.84
360
--
5
4.5
--
--
VCC Power On Reset (POR) V
PORL
Internal BOOT Switch
Internal Boost Switch On
Resistance
R
BOOT
V
PORHYS
Hysteresis
VCC to BOOT, 10mA
--
--
80
Copyright
©
2016 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
4
DS9610C-01 April 2016
RT9610C
Parameter
PWM Input
Input Current
PWM Tri-State Rising Threshold
PWM Tri-State Falling Threshold
EN Input
EN Input Voltage
Switching Time
UGATE Rise Time
UGATE Fall Time
LGATE Rise Time
LGATE Fall Time
LGATE Turn-Off Propagation Delay
t
UGATEr
t
UGATEf
t
LGATEr
t
LGATEf
t
PDLL
t
PDHL
t
PTS
V
CC
= 5V, 3nF Load
V
CC
= 5V, 3nF Load
V
CC
= 5V, 3nF Load
V
CC
= 5V, 3nF Load
V
CC
= 5V, Outputs Unloaded
V
CC
= 5V, Outputs Unloaded
V
CC
= 5V, Outputs Unloaded
V
CC
= 5V, Outputs Unloaded
V
CC
= 5V, Outputs Unloaded
--
--
--
--
--
--
--
--
--
8
8
8
4
35
35
20
20
35
--
--
--
--
--
--
--
--
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
Logic-High
Logic-Low
V
ENH
V
ENL
V
CC
= 5V
V
CC
= 5V
1.4
--
--
--
--
0.48
V
I
PWM
V
PWMH
V
PWML
V
PWM
= 5V
V
PWM
= 0V
V
CC
= 5V
V
CC
= 5V
--
--
3.5
0.7
174
174
3.8
1
--
--
4.1
1.3
A
V
V
Symbol
Test Conditions
Min
Typ
Max
Unit
UGATE Turn-Off Propagation Delay t
PDLU
UGATE Turn-On Propagation Delay t
PDHU
LGATE Turn-On Propagation Delay
UGATE/LGATE Tri-State
Propagation Delay
Output
UGATE Driver Source Resistance
UGATE Driver Source Current
UGATE Driver Sink Resistance
UGATE Driver Sink Current
LGATE Driver Source Resistance
LGATE Driver Source Current
LGATE Driver Sink Resistance
LGATE Driver Sink Current
R
UGATEsr
I
UGATEsr
R
UGATEsk
I
UGATEsk
R
LGATEsr
I
LGATEsr
R
LGATEsk
I
LGATEsk
100mA Source Current
V
UGATE
V
PHASE
= 2.5V
100mA Sink Current
V
UGATE
V
PHASE
= 2.5V
100mA Source Current
V
LGATE
= 2.5V
100mA Sink Current
V
LGATE
= 2.5V
--
--
--
--
--
--
--
--
1
2
1
2
1
2
0.5
4
--
--
--
--
--
--
--
--
A
A
A
A
Note 1.
Stresses beyond those listed
“Absolute
Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2.
θ
JA
is measured at T
A
= 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7.
θ
JC
is
measured at the exposed pad of the package.
Note 3.
Devices are ESD sensitive. Handling precaution recommended. The human body mode is a 100pF capacitor is
charged through a 1.5kΩ resistor into each pin.
Note 4.
The device is not guaranteed to function outside its operating conditions.
Copyright
©
2016 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
DS9610C-01 April 2016
www.richtek.com
5
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