30V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
PDP3960
BVDSS
30V
Features
30V, 176A, RDS(ON) =3mΩ@VGS = 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
RDSON
3m
ID
176A
TO220 Pin Configuration
D
Applications
MB / VGA / Vcore
POL Applications
SMPS 2
nd
SR
G
G
DS
S
Absolute Maximum Ratings
Tc=25℃ unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
EAS
IAS
P
D
T
STG
T
J
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (T
C
=25℃)
Drain Current – Continuous (T
C
=100℃)
Drain Current – Pulsed
1
Single Pulse Avalanche Energy
2
Single Pulse Avalanche Current
2
Power Dissipation (T
C
=25℃)
Power Dissipation – Derate above 25℃
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Rating
30
±20
176
111
704
180
60
168
1.34
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
W/℃
℃
℃
Thermal Characteristics
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
Typ.
---
---
Max.
62
0.74
Unit
℃/W
℃/W
Potens semiconductor corp.
Ver.1.0.2
1
30V N-Channel MOSFETs
Electrical Characteristics
(T
J
=25
℃,
unless otherwise noted)
Off Characteristics
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
DS
=30V , V
GS
=0V , T
J
=25℃
V
DS
=24V , V
GS
=0V , T
J
=125℃
Gate-Source Leakage Current
V
GS
=±20V
, V
DS
=0V
Min.
30
---
---
---
---
PDP3960
Typ.
---
0.03
---
---
---
Max.
---
---
1
10
±100
Unit
V
V/℃
uA
uA
nA
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
I
DSS
I
GSS
Drain-Source Leakage Current
On Characteristics
R
DS(ON)
V
GS(th)
△V
GS(th)
gfs
Static Drain-Source On-Resistance
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Forward Transconductance
3
V
GS
=10V , I
D
=30A
V
GS
=4.5V , I
D
=15A
V
GS
=V
DS
, I
D
=250uA
V
DS
=10V , I
D
=2A
---
---
1.2
---
---
2.4
3.2
1.6
-5
16
3
4
2.5
---
---
m
m
V
mV/℃
S
Dynamic Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
R
g
Total Gate Charge
3,4
3,4
---
V
DS
=15V , V
GS
=4.5V , I
D
=24A
---
---
---
V
DD
=15V , V
GS
=10V , R
G
=1
---
---
---
---
V
DS
=25V , V
GS
=0V , F=1MHz
---
---
V
GS
=0V, V
DS
=0V, F=1MHz
---
I
D
=1A
40
6
19
20
32
75
28
4800
735
420
1.6
75
12
35
40
60
130
55
8000
1300
800
3.5
pF
ns
nC
Gate-Source Charge
Gate-Drain Charge
3,4
3,4
3,4
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
3,4
3,4
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Drain-Source Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
Pulsed Source Current
3
3
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25℃
V
DS
=30V,I
S
=1A , di/dt=100A/µs
T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
49
18
Max.
176
352
1
85
35
Unit
A
A
V
ns
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=60A.,R
G
=25
,
Starting T
J
=25℃.
3. The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
4. Essentially independent of operating temperature.
Potens semiconductor corp.
Ver.1.0.2
2
30V N-Channel MOSFETs
PDP3960
Normalized On Resistance (m)
I
D
, Continuous Drain Current (A)
Fig.1
Normalized Gate Threshold Voltage (V)
T
C
, Case Temperature (℃)
Continuous Drain Current vs. T
C
Fig.2
T
J
, Junction Temperature (℃)
Normalized RDSON vs. T
J
Fig.3
Normalized Thermal Response (R
θJC
)
T
J
, Junction Temperature (℃)
Normalized V
th
vs. T
J
V
GS
, Gate to Source Voltage (V)
Fig.4
Qg , Gate Charge (nC)
Gate Charge Waveform
I
D
, Continuous Drain Current (A)
Fig.5
Square Wave Pulse Duration (s)
Normalized Transient Impedance
Fig.6
V
DS
, Drain to Source Voltage (V)
Maximum Safe Operation Area
Potens semiconductor corp.
Ver.1.0.2
3
30V N-Channel MOSFETs
V
DS
90%
BV
DSS
EAS=
1
L x I
AS2
x
2
PDP3960
BV
DSS
BV
DSS
-V
DD
V
DD
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
I
AS
V
GS
Fig.8
EAS Waveform
Fig.7
Switching Time Waveform
Potens semiconductor corp.
Ver.1.0.2
4
30V N-Channel MOSFETs
PDP3960
TO220 PACKAGE INFORMATION
Symbol
A
A1
A2
A3
B
C
C1
D
E
G
H
K
L
M
N
T
DIA
Potens semiconductor corp.
Dimensions In Millimeters
MAX
10.300
8.840
1.250
5.300
16.200
4.680
1.500
1.000
3.800
9.300
0.600
2.700
13.600
1.500
2.590
W0.35
Φ1.5 TYP.
deep0.2 TYP.
MIN
9.700
8.440
1.050
5.100
15.400
4.280
1.100
0.600
3.400
8.700
0.400
2.100
12.800
1.100
2.490
Dimensions In Inches
MAX
0.406
0.348
0.049
0.209
0.638
0.184
0.059
0.039
0.150
0.366
0.024
0.106
0.535
0.059
0.102
W0.014
Φ0.059 TYP.
deep0.008 TYP.
MIN
0.382
0.332
0.041
0.201
0.606
0.169
0.043
0.024
0.134
0.343
0.016
0.083
0.504
0.043
0.098
Ver.1.0.2
5
微控制器 MCU
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