100V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
PDH0980
BVDSS
100V
Features
100V,150A, RDS(ON) =4.2mΩ@VGS = 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
RDSON
4.2m
ID
150A
TO263 Pin Configuration
D
Applications
Networking
Load Switch
LED applications
D
G
G
S
S
Quick Charger
Absolute Maximum Ratings
Tc=25℃ unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
EAS
IAS
P
D
T
STG
T
J
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (T
C
=25℃)
Drain Current – Continuous (T
C
=100℃)
Drain Current – Pulsed
1
Single Pulse Avalanche Energy
2
Single Pulse Avalanche Current
2
Power Dissipation (T
C
=25℃)
Power Dissipation – Derate above 25℃
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Rating
100
+20/-12
150
95
600
378
87
275
2.22
-50 to 150
-50 to 150
Units
V
V
A
A
A
mJ
A
W
W/℃
℃
℃
Thermal Characteristics
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
Typ.
---
---
Max.
62
0.45
Unit
℃/W
℃/W
Potens semiconductor corp.
Ver.1.01
1
100V N-Channel MOSFETs
Electrical Characteristics
(T
J
=25
℃,
unless otherwise noted)
Off Characteristics
Symbol
BV
DSS
I
DSS
I
GSS
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Conditions
V
GS
=0V , I
D
=250uA
V
DS
=100V , V
GS
=0V , T
J
=25℃
V
DS
=80V , V
GS
=0V , T
J
=85℃
V
GS
=20V
, V
DS
=0V
Min.
100
---
---
---
PDH0980
Typ.
---
---
---
---
Max.
---
1
10
100
Unit
V
uA
uA
nA
On Characteristics
R
DS(ON)
V
GS(th)
gfs
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
V
GS
=10V , I
D
=20A
V
GS
=4.5V , I
D
=15A
V
GS
=V
DS
, I
D
=250uA
V
DS
=10V , I
D
=3A
---
---
1.2
---
3.5
4.5
1.8
20
4.2
6.0
2.5
---
m
m
V
S
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
R
g
Total Gate Charge
3 , 4
Gate-Source Charge
3 , 4
Gate-Drain Charge
3 , 4
Turn-On Delay Time
3 , 4
Rise Time
3 , 4
Turn-Off Delay Time
3 , 4
Fall Time
3 , 4
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, F=1MHz
V
DS
=25V , V
GS
=0V , F=1MHz
V
DD
=50V , V
GS
=10V , R
G
=6
I
D
=1A
V
DS
=80V , V
GS
=10V , I
D
=10A
---
---
---
---
---
---
---
---
---
---
---
110
11.5
28
23
32
157
115
6680
1690
78
1.9
165
18
42
46
64
320
230
13300
3380
156
---
pF
ns
nC
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
V
GS
=0V , I
S
=1A , T
J
=25℃
Conditions
V
G
=V
D
=0V , Force Current
Min.
---
---
---
Typ.
---
---
---
Max.
150
300
1
Unit
A
A
V
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=87A.,R
G
=25
,
Starting T
J
=25℃.
3. The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
4. Essentially independent of operating temperature.
Potens semiconductor corp.
Ver.1.01
2
100V N-Channel MOSFETs
PDH0980
Normalized On Resistance (m)
I
D
, Continuous Drain Current (A)
Fig.1
T
C
, Case Temperature (℃)
Continuous Drain Current vs. T
C
T
J
, Junction Temperature (℃)
Fig.2
Normalized RDSON vs. T
J
Normalized Gate Threshold Voltage (V)
V
GS
, Gate to Source Voltage (V)
Fig.3
T
J
, Junction Temperature (℃)
Normalized Vth vs. T
J
Qg , Gate Charge (nC)
Fig.4
Gate Charge Characteristics
Normalized Thermal Response (R
θJC
)
I
D
, Drain Current (A)
Square Wave Pulse Duration (s)
Fig.5
Normalized Transient Impedance
Fig.6
V
DS
, Drain to Source Voltage (V)
Maximum Safe Operation Area
Potens semiconductor corp.
Ver.1.01
3
100V N-Channel MOSFETs
V
DS
90%
PDH0980
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.7
Switching Time Waveform
Fig.8
Gate Charge Waveform
Potens semiconductor corp.
Ver.1.01
4
100V N-Channel MOSFETs
PDH0980
TO263 PACKAGE INFORMATION
Potens semiconductor corp.
Ver.1.01
5
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