60V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
PDK6912
BVDSS
60V
Features
⚫
60V,5A, RDS(ON) =75mΩ@VGS = 10V
⚫
Improved dv/dt capability
⚫
Fast switching
⚫
100% EAS Guaranteed
⚫
Green Device Available
RDSON
75m
ID
5A
SOT89 Pin Configuration
D
D
S
G
D
S
G
Applications
⚫
Motor Drive
⚫
Power Tools
⚫
LED Lighting
Absolute Maximum Ratings
Tc=25℃ unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
EAS
IAS
P
D
T
STG
T
J
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (T
C
=25℃)
Drain Current – Continuous (T
C
=100℃)
Drain Current – Pulsed
1
Single Pulse Avalanche Energy
2
Single Pulse Avalanche Current
2
Power Dissipation (T
C
=25℃)
Power Dissipation – Derate above 25℃
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Rating
60
±20
5
3.2
20
25
7
1.79
0.014
-50 to 150
-50 to 150
Units
V
V
A
A
A
mJ
A
W
W/℃
℃
℃
Thermal Characteristics
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
Typ.
---
---
Max.
70
30
Unit
℃/W
℃/W
Potens semiconductor corp.
Ver.1.01
1
60V N-Channel MOSFETs
Electrical Characteristics
(T
J
=25
℃,
unless otherwise noted)
Off Characteristics
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
DS
=60V , V
GS
=0V , T
J
=25℃
V
DS
=48V , V
GS
=0V , T
J
=125℃
I
GSS
Gate-Source Leakage Current
V
GS
=±20V
, V
DS
=0V
Min.
60
---
---
---
---
PDK6912
Typ.
---
0.05
---
---
---
Max.
---
---
1
10
±100
Unit
V
V/℃
uA
uA
nA
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
I
DSS
Drain-Source Leakage Current
On Characteristics
R
DS(ON)
V
GS(th)
△V
GS(th)
gfs
Static Drain-Source On-Resistance
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Forward Transconductance
V
DS
=10V , I
D
=3A
V
GS
=10V , I
D
=5A
V
GS
=4.5V , I
D
=3A
V
GS
=V
DS
, I
D
=250uA
---
---
1.2
---
---
60
70
1.8
-5
7
75
90
2.5
---
---
m
m
V
mV/℃
S
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
R
g
Total Gate Charge
2 , 3
Gate-Source Charge
2 , 3
Gate-Drain Charge
2 , 3
Turn-On Delay Time
2 , 3
Rise Time
2 , 3
Turn-Off Delay Time
2 , 3
Fall Time
2 , 3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, F=1MHz
V
DS
=15V , V
GS
=0V , F=1MHz
V
DD
=30V , V
GS
=10V , R
G
=3.3
I
D
=1A
V
DS
=48V , V
GS
=10V , I
D
=5A
---
---
---
---
---
---
---
---
---
---
---
9.3
2.1
1.8
2.9
9.5
18.4
5.3
500
45
16
2
14
4
4
6
18
35
10
725
65
30
4
pF
ns
nC
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
2
Reverse Recovery Charge
2
V
GS
=0V , I
S
=1A , T
J
=25℃
V
GS
=30V,I
S
=1A , dI/dt=100A/µs
T
J
=25℃
Conditions
V
G
=V
D
=0V , Force Current
Min.
---
---
---
---
---
Typ.
---
---
---
23.2
14.3
Max.
5
20
1
---
---
Unit
A
A
V
ns
nC
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. V
DD
=25V,V
GS
=10V,L=1mH,I
AS
=7A.,R
G
=25
,
Starting T
J
=25℃
3. The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
4. Essentially independent of operating temperature.
Potens semiconductor corp.
Ver.1.01
2
60V N-Channel MOSFETs
Drain to Source On Resistance (m)
PDK6912
VGS=6V
VGS=5V
VGS=4V
I
D
, Drain Current (A)
VGS=10V
VGS=9V
VGS=8V
VGS=7V
ID=5A
ID=1A
VGS=3V
V
DS
, Drain to Source Voltage (V)
Fig.1
Typical Output Characteristics
Fig.2
V
GS
, Gate to Source Voltage (V)
RDSON vs. Gate Voltage
I
D
, Continuous Drain Current (A)
T
C
, Case Temperature (℃)
Fig.3
Continuous Drain Current vs. T
C
Fig.4
Normalized On Resistance (m)
T
C
, Case Temperature (℃)
Normalized RDSON vs. T
J
Normalized Gate Threshold Voltage
V
GS
, Gate to Source Voltage (V)
(V)
Fig.5
T
J
, Junction Temperature (℃)
Normalized V
th
vs. T
J
Qg , Gate Charge (nC)
Fig.6
Gate Charge Waveform
Potens semiconductor corp.
Ver.1.01
3
60V N-Channel MOSFETs
PDK6912
I
D ,
Continuous Drain Current (A)
Normalized Thermal Response
(R
ΘJC
)
Square Wave Pulse Duration (s)
Normalized Transient Response
Fig.7
V
DS
Fig.8
EAS=
V
DS
, Drain to Source Voltage (V)
Maximum Safe Operation Area
1
L x I
AS2
x
2
BV
DSS
BV
DSS
-V
DD
V
DD
90%
BV
DSS
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10
EAS Waveform
Fig.9
Switching Time Waveform
Potens semiconductor corp.
Ver.1.01
4
60V N-Channel MOSFETs
PDK6912
SOT89 PACKAGE INFORMATION
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min
Max
1.400
1.600
0.320
0.520
0.400
0.580
0.350
0.440
4.400
4.600
1.550 REF
2.300
2.600
3.940
4.250
1.500 TYP.
3.000 TYP
0.900
1.200
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.016
0.014
0.173
0.061 REF
0.091
0.155
0.060 TYP.
0.118 TYP
0.035
0.047
0.102
0.167
0.023
0.017
0.181
Potens semiconductor corp.
Ver.1.01
5
嵌入式系统
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