30V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
PDK3908
BVDSS
30V
Features
30V, 7.5A, RDS(ON)=15.5mΩ@VGS = 10V
Fast switching
RDSON
15.5m
ID
7.5A
Green Device Available
SOT89 Pin Configuration
Applications
D
D
S
G
S
Notebook
Load Switch
G
D
Absolute Maximum Ratings
Tc=25℃ unless otherwise noted
Symbol
V
DS
V
GS
I
D
Parameter
ar
yd
Parameter
---
at
as
LED applications
Hand-Held Device
Rating
30
±20
7.5
6
30
1.47
0.012
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Typ.
Max.
85
Unit
℃/W
Ver.1.00
Drain-Source Voltage
Gate-Source Voltage
Pr
el
im
in
I
DM
P
D
Drain Current – Pulsed
1
Power Dissipation (T
A
=25℃)
T
STG
T
J
Storage Temperature Range
Drain Current – Continuous (T
A
=25℃)
Drain Current – Continuous (T
A
=70℃)
Power Dissipation – Derate above 25℃
Operating Junction Temperature Range
Thermal Characteristics
Symbol
R
θJA
Thermal Resistance Junction to ambient
Potens semiconductor corp.
1
he
et
Improved dv/dt capability
30V N-Channel MOSFETs
Electrical Characteristics
(T
J
=25
℃,
unless otherwise noted)
Off Characteristics
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
DS
=30V , V
GS
=0V , T
J
=25℃
V
DS
=24V , V
GS
=0V , T
J
=125℃
I
GSS
Gate-Source Leakage Current
V
GS
=±20V
, V
DS
=0V
Min.
30
---
---
---
---
PDK3908
Typ.
---
0.04
---
---
---
Max.
---
---
1
10
±100
Unit
V
V/℃
uA
uA
nA
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
I
DSS
Drain-Source Leakage Current
On Characteristics
R
DS(ON)
V
GS(th)
△V
GS(th)
gfs
Static Drain-Source On-Resistance
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Forward Transconductance
V
GS
=10V , I
D
=4A
V
GS
=4.5V , I
D
=3A
V
GS
=V
DS
, I
D
=250uA
V
DS
=10V , I
D
=10A
at
as
1.2
---
---
---
---
---
---
---
---
---
---
---
---
---
Conditions
Min.
---
---
---
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
Total Gate Charge
2 , 3
Gate-Source Charge
2 , 3
Gate-Drain Charge
2 , 3
Rise Time
2 , 3
Fall Time
2 , 3
Input Capacitance
Turn-On Delay Time
2 , 3
Turn-Off Delay Time
2 , 3
ar
yd
I
D
=1A
V
DS
=15V , V
GS
=10V , I
D
=4A
V
DD
=15V , V
GS
=10V , R
G
=3.3
Pr
el
im
in
C
oss
C
rss
R
g
Output Capacitance
V
DS
=25V , V
GS
=0V , F=1MHz
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, F=1MHz
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
Parameter
Typ.
---
---
---
Max.
7.5
15
1
Unit
A
A
V
Continuous Source Current
Pulsed Source Current
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25℃
I
SM
V
SD
Diode Forward Voltage
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
3. Essentially independent of operating temperature.
Potens semiconductor corp.
2
he
et
---
---
13
17
15.5
22
m
m
V
mV/℃
S
1.6
-4
18
2.5
---
---
16.7
1.3
4.5
4.8
12.5
27.6
8.2
750
150
110
2.7
32
3
9
9
25
50
16
1350
300
200
4.5
pF
ns
nC
Ver.1.00
30V N-Channel MOSFETs
PDK3908
Normalized On Resistance (m)
I
D
, Continuous Drain Current (A)
Fig.1
Normalized Gate Threshold Voltage (V)
T
J
, Junction Temperature (℃)
Continuous Drain Current vs. T
C
Fig.2
T
J
, Junction Temperature (℃)
Normalized RDSON vs. T
J
Pr
el
im
in
Fig.3
Normalized Thermal Response (R
θJC
)
Fig.5
Square Wave Pulse Duration (s)
Normalized Transient Impedance
Potens semiconductor corp.
T
J
, Junction Temperature (℃)
Normalized V
th
vs. T
J
ar
yd
1
Fig.4
I
D
, Continuous Drain Current (A)
Fig.6
3
V
GS
, Gate to Source Voltage (V)
at
as
Qg , Gate Charge (nC)
Gate Charge Waveform
V
DS
, Drain to Source Voltage (V)
Maximum Safe Operation Area
Ver.1.00
he
et
30V N-Channel MOSFETs
V
DS
90%
BV
DSS
EAS=
1
L x I
AS2
x
2
PDK3908
BV
DSS
BV
DSS
-V
DD
V
DD
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.8
Fig.7
Switching Time Waveform
EAS Waveform
Pr
el
im
in
Potens semiconductor corp.
ar
yd
Ver.1.00
at
as
4
he
et
I
AS
30V N-Channel MOSFETs
PDK3908
SOT89 PACKAGE INFORMATION
Pr
el
im
in
A
b
b1
c
D
D1
E
E1
e
e1
L
Symbol
Dimensions In Millimeters
Min
Max
1.400
1.600
0.320
0.520
0.400
0.580
0.350
0.440
4.400
4.600
1.550 REF
2.300
2.600
3.940
4.250
1.500 TYP.
3.000 TYP
0.900
1.200
ar
yd
5
Potens semiconductor corp.
at
as
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.016
0.014
0.173
0.061 REF
0.091
0.155
0.060 TYP.
0.118 TYP
0.035
0.047
0.102
0.167
0.023
0.017
0.181
Ver.1.00
he
et
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
