30V P-Channel MOSFETs
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
PDS3903
BVDSS
-30V
Features
-
30V,
-
13A, RDS(ON) =9.5mΩ@VGS =
-
10V
Fast switching
Green Device Available
Suit for
-
4.5V Gate Drive Applications
RDSON
9.5m
ID
-13A
SOP8 Pin Configuration
D
Applications
MB / VGA / Vcore
POL Applications
Load Switch
D
D
D
D
G
S
S
G
S
LED Application
S
Absolute Maximum Ratings
Tc=25℃ unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (T
C
=25℃)
Drain Current – Continuous (T
C
=100℃)
Drain Current – Pulsed
1
Power Dissipation (T
C
=25℃)
Power Dissipation – Derate above 25℃
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Rating
Units
V
V
A
A
A
W
W/℃
℃
℃
-
30
±20
-13
-7.8
-52
4.2
0.034
-55 to 150
-55 to 150
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Typ.
---
---
Max.
30
60
Unit
℃/W
℃/W
Potens semiconductor corp.
Ver.1.02
1
30V P-Channel MOSFETs
PDS3903
Electrical Characteristics
(T
J
=25
℃,
unless otherwise noted)
Off Characteristics
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=
-
250uA
Reference to 25℃ , I
D
=
-
1mA
V
DS
=
-
30V , V
GS
=0V , T
J
=25℃
V
DS
=
-
24V , V
GS
=0V , T
J
=125℃
V
GS
=±20V
, V
DS
=0V
Min.
Typ.
---
Max.
---
---
Unit
V
V/℃
uA
uA
nA
-
30
---
---
---
---
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
I
DSS
I
GSS
Drain-Source Leakage Current
Gate-Source Leakage Current
-
0.03
---
---
---
-
1
-
10
±100
On Characteristics
R
DS(ON)
V
GS(th)
△V
GS(th)
gfs
Static Drain-Source On-Resistance
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Forward Transconductance
V
GS
=
-
10V , I
D
=
-
10A
V
GS
=
-
4.5V , I
D
=
-
8A
V
GS
=V
DS
, I
D
=
-
250uA
V
DS
=
-
10V , I
D
=
-
10A
---
---
8
12.4
9.5
15
m
m
V
mV/℃
S
-
1.0
---
---
-
1.6
4
13
-
2.5
---
---
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
R
g
Total Gate Charge
2 , 3
Gate-Source Charge
2 , 3
Gate-Drain Charge
2 , 3
Turn-On Delay Time
Rise Time
2 , 3
Turn-Off Delay Time
2 , 3
Fall Time
2 , 3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, F=1MHz
V
DS
=
-
15V , V
GS
=0V , F=1MHz
2,3
---
V
DS
=
-
15V , V
GS
=
-
4.5V , I
D
=
-
10A
---
---
---
V
DD
=
-
15V , V
GS
=
-
10V , R
G
=6
I
D
=
-
1A
---
---
---
---
---
---
---
35
10.8
10.6
24.5
10.5
156.8
50
3300
410
280
8.5
56
16
16
38
16
230
75
4800
700
500
12
pF
ns
nC
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=
-
1A , T
J
=25℃
Min.
---
---
---
Typ.
---
---
---
Max.
-13
-26
Unit
A
A
V
-
1
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
3. Essentially independent of operating temperature.
Potens semiconductor corp.
Ver.1.02
2
30V P-Channel MOSFETs
PDS3903
Normalized On Resistance (m)
I
D
, Continuous Drain Current (A)
T
C
, Case Temperature (℃)
Fig.1 Continuous Drain Current vs. T
C
Normalized Gate Threshold Voltage (V)
Fig.2
T
J
, Junction Temperature (℃)
Normalized RDSON vs. T
J
T
J
, Junction Temperature (℃)
Fig.3
Normalized Thermal Response (R
θJA
)
Normalized V
th
vs. T
J
Fig.4
-I
D
, Continuous Drain Current (A)
-V
GS
, Gate to Source Voltage (V)
Qg , Gate Charge (nC)
Gate Charge Waveform
Fig.5
Square Wave Pulse Duration (s)
Normalized Transient Impedance
-V
DS
, Drain to Source Voltage (V)
Fig.6 Maximum Safe Operation Area
Ver.1.02
Potens semiconductor corp.
3
30V P-Channel MOSFETs
PDS3903
Fig.7 Switching Time Waveform
Fig.8
Gate Charge Waveform
Potens semiconductor corp.
Ver.1.02
4
30V P-Channel MOSFETs
PDS3903
SOP8 PACKAGE INFORMATION
Symbol
A
A1
A2
A3
b
c
D
E
E1
e
h
L
L1
θ
Potens semiconductor corp.
Dimensions In Millimeters
Min
Max
1.350
1.750
0.100
0.250
1.300
1.500
0.600
0.700
0.390
0.480
0.210
0.260
4.700
5.100
5.800
6.200
3.700
4.100
1.270(BSC)
0.250
0.500
0.500
0.800
1.050(BSC)
0˚
8˚
Dimensions In Inches
Min
Max
0.053
0.068
0.004
0.009
0.052
0.059
0.024
0.027
0.016
0.018
0.009
0.010
0.186
0.200
0.229
0.244
0.146
0.161
0.050(BSC)
0.010
0.019
0.019
0.031
0.041(BSC)
0˚
8˚
Ver.1.02
5
Microchip MCU
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