30V P-Channel MOSFETs
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
PDS3807
BVDSS
-30V
Features
-
30V,
-
7A, RDS(ON) =23mΩ@VGS =
-
10V
Fast switching
Green Device Available
Suit for
-
4.5V Gate Drive Applications
RDSON
23m
ID
-7A
SOP8 Pin Configuration
Applications
D1
D2
MB / VGA / Vcore
POL Applications
Load Switch
D2
D2
D1
D1
G2
S2
G1
S1
G1
G2
LED Application
S1
S2
Absolute Maximum Ratings
Tc=25℃ unless otherwise noted
Symbol
V
DS
V
GS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Drain-Source Voltage
Gate-Source Voltage (base on I
GSS1
condition)
Gate-Source Voltage (base on I
GSS2
condition)
Drain Current – Continuous (T
C
=25℃)
Drain Current – Continuous (T
C
=100℃)
Drain Current – Pulsed
1
Power Dissipation (T
C
=25℃)
Power Dissipation – Derate above 25℃
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Rating
Units
V
V
V
A
A
A
W
W/℃
℃
℃
-
30
±20
±25
-7
-4.43
-28
2.1
0.017
-55 to 150
-55 to 150
Thermal Characteristics
Symbol
R
θJA
Parameter
Thermal Resistance Junction to ambient
Typ.
---
Max.
60
Unit
℃/W
Potens semiconductor corp.
Ver.1.01
1
30V P-Channel MOSFETs
PDS3807
Electrical Characteristics
(T
J
=25
℃,
unless otherwise noted)
Off Characteristics
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=
-
250uA
Reference to 25℃ , I
D
=
-
1mA
V
DS
=
-
30V , V
GS
=0V , T
J
=25℃
V
DS
=
-
24V , V
GS
=0V , T
J
=125℃
V
GS
=±20V
, V
DS
=0V
V
GS
=±25V
, V
DS
=0V
Min.
Typ.
---
Max.
---
---
Unit
V
V/℃
uA
uA
nA
mA
-
30
---
---
---
---
---
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
I
DSS
I
GSS1
I
GSS2
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Leakage Current
-
0.03
---
---
---
---
-
1
-
10
±100
±1
On Characteristics
R
DS(ON)
V
GS(th)
△V
GS(th)
gfs
Static Drain-Source On-Resistance
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Forward Transconductance
V
GS
=
-
10V , I
D
=
-
5A
V
GS
=
-
4.5V , I
D
=
-
3A
V
GS
=V
DS
, I
D
=
-
250uA
V
DS
=
-
10V , I
D
=
-
3A
---
---
20
30
23
36
m
m
V
mV/℃
S
-
1.2
---
---
-
1.6
4
6.8
-
2.5
---
---
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Total Gate Charge
2 , 3
Gate-Source Charge
2 , 3
Gate-Drain Charge
2 , 3
Turn-On Delay Time
2 , 3
Rise Time
2 , 3
Turn-Off Delay Time
2 , 3
Fall Time
2 , 3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=
-
15V , V
GS
=0V , F=1MHz
V
DD
=
-
15V , V
GS
=
-
10V , R
G
=6
I
D
=
-
1A
V
DS
=
-
15V , V
GS
=
-
4.5V , I
D
=
-
5A
---
---
---
---
---
---
---
---
---
---
11
3.4
4.2
5.8
18.8
46.9
12.3
1250
160
90
17
6
8
11
36
89
23
1820
235
130
pF
ns
nC
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=
-
1A , T
J
=25℃
Min.
---
---
---
Typ.
---
---
---
Max.
-7
-14
Unit
A
A
V
-
1
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
3. Essentially independent of operating temperature.
Potens semiconductor corp.
Ver.1.01
2
30V P-Channel MOSFETs
PDS3807
Normalized On Resistance (m)
I
D
, Continuous Drain Current (A)
T
C
, Case Temperature (℃)
Fig.1 Continuous Drain Current vs. T
C
Normalized Gate Threshold Voltage (V)
Fig.2
T
J
, Junction Temperature (℃)
Normalized RDSON vs. T
J
T
J
, Junction Temperature (℃)
Fig.3
Normalized Thermal Response (R
θJA
)
Normalized V
th
vs. T
J
Fig.4
-I
D
, Continuous Drain Current (A)
-V
GS
, Gate to Source Voltage (V)
Qg , Gate Charge (nC)
Gate Charge Waveform
Fig.5
Square Wave Pulse Duration (s)
Normalized Transient Impedance
-V
DS
, Drain to Source Voltage (V)
Fig.6 Maximum Safe Operation Area
Potens semiconductor corp.
Ver.1.01
3
30V P-Channel MOSFETs
PDS3807
Fig.7 Switching Time Waveform
Fig.8
Gate Charge Waveform
Potens semiconductor corp.
Ver.1.01
4
30V P-Channel MOSFETs
PDS3807
SOP8 PACKAGE INFORMATION
Symbol
A
A1
A2
A3
b
c
D
E
E1
e
h
L
L1
θ
Potens semiconductor corp.
Dimensions In Millimeters
Min
Max
1.350
1.750
0.100
0.250
1.300
1.500
0.600
0.700
0.390
0.480
0.210
0.260
4.700
5.100
5.800
6.200
3.700
4.100
1.270(BSC)
0.250
0.500
0.500
0.800
1.050(BSC)
0˚
8˚
Dimensions In Inches
Min
Max
0.053
0.068
0.004
0.009
0.052
0.059
0.024
0.027
0.016
0.018
0.009
0.010
0.186
0.200
0.229
0.244
0.146
0.161
0.050(BSC)
0.010
0.019
0.019
0.031
0.041(BSC)
0˚
8˚
Ver.1.01
5
DIY/开源硬件专区
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
