30V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
PDN3912S
BVDSS
30V
Features
30V,6.5A, RDS(ON) =24mΩ @VGS = 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
RDSON
24m
ID
6.5A
SOT23-3S Pin Configuration
D
D
S
G
S
G
Applications
MB / VGA / Vcore
Load Switch
Hand-Held Instrument
Absolute Maximum Ratings
Tc=25℃ unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
D M
EAS
IAS
P
D
T
STG
T
J
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (T
C
=25℃)
Drain Current – Continuous (T
C
=100℃)
Drain Current – Pulsed
1
Single Pulse Avalanche Energy
2
Single Pulse Avalanched Current
2
Power Dissipation (T
C
=25℃)
Power Dissipation – Derate above 25℃
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Rating
30
±20
6.5
4.1
26
32
8
1.56
0.012
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
W/℃
℃
℃
Thermal Characteristics
Symbol
R
θJA
Parameter
Thermal Resistance Junction to ambient
Typ.
---
Max.
80
Unit
℃/W
Potens semiconductor corp.
Ver.1.01
1
30V N-Channel MOSFETs
Electrical Characteristics
(T
J
=25
℃,
unless otherwise noted)
Off Characteristics
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
DS
=30V , V
GS
=0V , T
J
=25℃
V
DS
=24V , V
GS
=0V , T
J
=125℃
I
GSS
Gate-Source Leakage Current
V
GS
=±20V
, V
DS
=0V
PDN3912S
Min.
30
---
---
---
---
Typ.
---
0.04
---
---
---
Max.
---
---
1
10
±100
Unit
V
V/℃
uA
uA
nA
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
I
DSS
Drain-Source Leakage Current
On Characteristics
R
DS(ON)
V
GS(th)
△V
GS(th)
gfs
Static Drain-Source On-Resistance
3
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Forward Transconductance
V
DS
=10V , I
D
=4A
V
GS
=10V , I
D
=6A
V
GS
=4.5V , I
D
=4A
V
GS
=V
DS
, I
D
=250uA
---
---
1.2
---
---
20
27
1.6
-4
6.5
24
34
2.5
---
---
m
m
V
mV/℃
S
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Rg
Total Gate Charge
3 , 4
Gate-Source Charge
3 , 4
Gate-Drain Charge
3 , 4
Turn-On Delay Time
3 , 4
Rise Time
3 , 4
Turn-Off Delay Time
3 , 4
Fall Time
3 , 4
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, F=1MHz
V
DS
=25V , V
GS
=0V , F=1MHz
V
DD
=15V , V
GS
=10V , R
G
=6
I
D
=1A
V
DS
=15V , V
GS
=4.5V , I
D
=6A
---
---
---
---
---
---
---
---
---
---
---
4.1
1
2.1
2.8
7.2
15.8
4.6
345
55
32
3.2
8
2
4
5
14
30
9
500
80
45
6.4
pF
ns
nC
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
Pulsed Source Current
3
Diode Forward Voltage
3
Reverse Recovery Time
Reverse Recovery Charge
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25℃
V
GS
=0V,I
S
=1A , di/dt=100A/µs
T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
---
---
Max.
6.5
26
1
---
---
Unit
A
A
V
ns
nC
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. V
DD
=25V,V
GS
=10V,L=1mH,I
AS
=8A.,R
G
=25
,
Starting T
J
=25℃.
3. The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
4. Essentially independent of operating temperature.
Potens semiconductor corp.
Ver.1.01
2
30V N-Channel MOSFETs
PDN3912S
Normalized On Resistance (m)
I
D
, Continuous Drain Current (A)
T
C
, Case Temperature (℃)
Fig.1 Continuous Drain Current vs. T
C
T
J
, Junction Temperature (℃)
Fig.2 Normalized RDSON vs. T
J
Normalized Gate Threshold Voltage (V)
V
GS
, Gate to Source Voltage (V)
T
J
, Junction Temperature (℃)
Fig.3 Normalized V
th
vs. T
J
Qg , Gate Charge (nC)
Fig.4 Gate Charge Waveform
V
D S
Drain-Source V
oltage (V)
Fig.5 On Region Characteristics
Potens semiconductor corp.
I
D ,
Continuous Drain Current (A)
V
DS
, Drain to Source V
oltage (V)
Fig.6 Maximum Safe Operation Area
I
D
Drain Current (A)
Ver.1.01
3
30V N-Channel MOSFETs
PDN3912S
Normalized Thermal Response (R
ΘJA
)
Square Wave Pulse Duration (s)
Fig.7 Normalized Transient Response
V
DS
90%
EAS=
BV
DSS
1
L x I
AS2
x
2
BV
DSS
BV
DSS
-V
DD
V
DD
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
I
AS
V
GS
Fig.9 EAS Waveform
Fig.8 Switching Time Waveform
Potens semiconductor corp.
Ver.1.01
4
30V N-Channel MOSFETs
PDN3912S
SOT23-3S PACKAGE INFORMATION
Symbol
A
A1
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.000
0.000
0.100
0.300
0.500
0.090
0.110
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP.
1.800
2.000
0.550 REF.
0.300
0.500
1°
7°
Dimensions In Inches
Min
Max
0.035
0.039
0.000
0.004
0.012
0.003
0.110
0.047
0.089
0.037 TYP.
0.071
0.022 REF.
0.012
1°
0.020
7°
0.079
0.020
0.004
0.118
0.055
0.100
Potens semiconductor corp.
Ver.1.01
5
单片机
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