20V P-Channel MOSFETs
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
PDC2603Z
BVDSS
-20V
Features
-20V,-60A, RDS(ON) =8mΩ@VGS = -4.5V
Improved dv/dt capability
Fast switching
Green Device Available
Suit for -1.8V Gate Drive Applications
RDSON
8m
ID
-60A
PPAK3X3 Pin Configuration
DD
DD
G
S
S S
G
D
Applications
Notebook
Load Switch
Networking
Hand-Held Instruments
S
Absolute Maximum Ratings
Tc=25℃ unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (T
C
=25℃)
Drain Current – Continuous (T
C
=100℃)
Drain Current – Pulsed
1
Power Dissipation (T
C
=25℃)
Power Dissipation – Derate above 25℃
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Rating
-20
±12
-60
-38
-240
62.5
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Characteristics
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
Typ.
---
---
Max.
62
2
Unit
℃/W
℃/W
Potens semiconductor corp.
Ver.1.01
1
20V P-Channel MOSFETs
Electrical Characteristics
(T
J
=25
℃,
unless otherwise noted)
Off Characteristics
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=
-
250uA
Reference to 25℃ , I
D
=
-
1mA
V
DS
=
-
20V , V
GS
=0V , T
J
=25℃
V
DS
=
-
16V , V
GS
=0V , T
J
=125℃
V
GS
=±12V
, V
DS
=0V
PDC2603Z
Min.
-20
---
---
---
---
Typ.
---
-0.01
---
---
---
Max.
---
---
-1
-10
±100
Unit
V
V/℃
uA
uA
nA
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
I
DSS
I
GSS
Drain-Source Leakage Current
Gate-Source Leakage Current
On Characteristics
V
GS
=
-
4.5V , I
D
=
-
8A
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=
-
2.5V , I
D
=
-
5A
V
GS
=
-
1.8V , I
D
=
-
3A
V
GS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
V
GS
=V
DS
, I
D
=
-
250uA
V
DS
=
-
10V , I
S
=
-
5A
---
---
---
-0.3
---
6
8
11
-0.6
20
8
11
16
-1.0
---
V
S
m
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Total Gate Charge
2 , 3
Gate-Source Charge
2 , 3
Gate-Drain Charge
2 , 3
Turn-On Delay Time
2 , 3
Rise Time
2 , 3
Turn-Off Delay Time
2 , 3
Fall Time
2 , 3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=
-
15V , V
GS
=0V , F=1MHz
V
DD
=
-
10V , V
GS
=
-
4.5V , R
G
=25
I
D
=
-
1A
V
DS
=
-
10V , V
GS
=
-
4.5V , I
D
=
-
5A
---
---
---
---
---
---
---
---
---
---
44.4
7.2
10.2
13.2
68
160
154
4060
520
400
80
14
20
26
120
320
300
8000
1000
800
pF
nS
nC
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
V
GS
=0V , I
S
=
-
1A , T
J
=25℃
Conditions
V
G
=V
D
=0V , Force Current
Min.
---
---
---
Typ.
---
---
---
Max.
-60
-120
-1
Unit
A
A
V
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
3. Essentially independent of operating temperature.
Potens semiconductor corp.
Ver.1.01
2
20V P-Channel MOSFETs
PDC2603Z
Normalized On Resistance (m)
-I
D
, Continuous Drain Current (A)
T
C
, Case Temperature (℃)
Fig.1
Continuous Drain Current vs. T
C
Fig.2
T
J
, Junction Temperature (℃)
Normalized RDSON vs. T
J
Normalized Gate Threshold Voltage (V)
-V
GS
, Gate to Source Voltage (V)
Fig.3
T
J
, Junction Temperature (℃)
Normalized V
th
vs. T
J
Qg , Gate Charge (nC)
Fig.4
Gate Charge Waveform
Normalized Thermal Response (R
ΘJA
)
-I
D ,
Continuous Drain Current (A)
Square Wave Pulse Duration (s)
Fig.5
Normalized Transient Response
Fig.6
-V
DS
, Drain to Source Voltage (V)
Maximum Safe Operation Area
Potens semiconductor corp.
Ver.1.01
3
20V P-Channel MOSFETs
PDC2603Z
I
D
, Drain Current (A)
V
DS
, Drain to Source Voltage
Fig.7
-V
DS
90%
RDSON (mohm)
I
D
, Drain Current (A)
Fig.8
RDSON vs. Drain Current
Typical Output Characteristics
10%
-V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.9
Switching Time Waveform
Fig.10
Gate Charge Waveform
Potens semiconductor corp.
Ver.1.01
4
20V P-Channel MOSFETs
PDC2603Z
PPAK3x3 PACKAGE INFORMATION
Symbol
A
b
c
D
D1
D2
E
E1
E2
e
H
L
L1
θ
Dimensions In Millimeters
MAX
MIN
0.900
0.700
0.350
0.250
3.450
3.200
1.850
3.400
3.250
2.600
0.500
0.500
0.200
12°
0.240
0.100
3.050
2.900
1.350
3.000
2.900
2.350
0.65BSC
0.300
0.300
0.070
0°
Dimensions In Inches
MAX
MIN
0.035
0.028
0.014
0.010
0.136
0.126
0.073
0.134
0.128
0.102
0.020
0.020
0.008
12°
0.009
0.004
0.120
0.114
0.053
0.118
0.114
0.093
0.026BSC
0.012
0.012
0.003
0°
Potens semiconductor corp.
Ver.1.01
5
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