30V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
PDC3906Z
BVDSS
30V
Features
30V,60A, RDS(ON) =6mΩ@VGS = 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
RDSON
6mΩ
ID
60A
PPAK3x3 Pin Configuration
D
D
D D
D
Applications
MB / VGA / Vcore
POL Applications
SMPS 2
nd
SR
S
S
SG
G
S
Absolute Maximum Ratings
Tc=25℃ unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
EAS
IAS
P
D
T
STG
T
J
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (T
C
=25℃)
Drain Current – Continuous (T
C
=100℃)
Drain Current – Pulsed
1
Single Pulse Avalanche Energy
2
Single Pulse Avalanche Current
2
Power Dissipation (T
C
=25℃)
Power Dissipation – Derate above 25℃
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Rating
30
±20
60
38
240
88
42
45
0.36
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
W/℃
℃
℃
Thermal Characteristics
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
Typ.
---
---
Max.
62
2.8
Unit
℃/W
℃/W
Potens semiconductor corp.
Ver.1.00
1
30V N-Channel MOSFETs
Electrical Characteristics
(T
J
=25
℃,
unless otherwise noted)
Static State Characteristics
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
DS
=30V , V
GS
=0V , T
J
=25℃
V
DS
=24V , V
GS
=0V , T
J
=125℃
I
GSS
R
DS(ON)
V
GS(th)
△V
GS(th)
gfs
Gate-Source Leakage Current
Static Drain-Source On-Resistance
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Forward Transconductance
3
PDC3906Z
Min.
30
---
---
---
---
---
---
1.2
---
---
Typ.
---
0.04
---
---
---
4.8
6.7
1.6
-4
23
Max.
---
---
1
10
±100
6
9
2.5
---
---
Unit
V
V/℃
uA
uA
nA
mΩ
mΩ
V
mV/℃
S
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
I
DSS
Drain-Source Leakage Current
V
GS
=±20V
, V
DS
=0V
V
GS
=10V , I
D
=20A
V
GS
=4.5V , I
D
=10A
V
GS
=V
DS
, I
D
=250uA
V
DS
=10V , I
D
=10A
Dynamic Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
R
g
Total Gate Charge
3,4
3,4
---
V
DS
=15V , V
GS
=4.5V , I
D
=20A
---
---
---
V
DD
=15V , V
GS
=10V , R
G
=3.3Ω
---
---
---
---
V
DS
=25V , V
GS
=0V , F=1MHz
---
---
V
GS
=0V, V
DS
=0V, F=1MHz
---
I
D
=15A
11.1
1.85
6.8
7.5
14.5
35.2
9.6
1210
190
100
2.5
18
3.8
12
14
28
67
18
1800
280
150
5
Ω
pF
ns
nC
Gate-Source Charge
Gate-Drain Charge
3,4
3,4
3,4
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
3,4
3,4
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Guaranteed Avalanche Energy
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Conditions
V
DD
=25V, L=0.1mH, IAS=20A
Min.
20
Typ.
---
Max.
---
Unit
mJ
Drain-Source Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
Pulsed Source Current
3
3
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25℃
V
GS
=0V,I
S
=1A , di/dt=100A/µs
T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
---
---
Max.
60
240
1
---
---
Unit
A
A
V
ns
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=42A.,R
G
=25
Ω,
Starting T
J
=25℃.
3. The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
4. Essentially independent of operating temperature.
Potens semiconductor corp.
Ver.1.00
2
30V N-Channel MOSFETs
PDC3906Z
Normalized On Resistance (mΩ)
T
J
, Junction Temperature (℃)
Fig.2 Normalized RDSON vs. T
J
Normalized Gate Threshold Voltage (V)
I
D
, Continuous Drain Current (A)
T
C
, Case Temperature (℃)
Fig.1 Continuous Drain Current vs. T
C
T
J
, Junction Temperature (℃)
Fig.3 Normalized V
th
vs. T
J
Normalized Thermal Response (R
θJC
)
Square Wave Pulse Duration (s)
Fig.5 Normalized Transient Impedance
Potens semiconductor corp.
I
D
, Continuous Drain Current (A)
V
DS
, Drain to Source Voltage (V)
Fig.6 Maximum Safe Operation Area
V
GS
, Gate to Source Voltage (V)
Qg , Gate Charge (nC)
Fig.4 Gate Charge Waveform
Ver.1.00
3
30V N-Channel MOSFETs
V
DS
90%
BV
DSS
EAS=
1
L x I
AS2
x
2
PDC3906Z
BV
DSS
BV
DSS
-V
DD
V
DD
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
I
AS
V
GS
Fig.8 EAS Waveform
Fig.7 Switching Time Waveform
Potens semiconductor corp.
Ver.1.00
4
30V N-Channel MOSFETs
PDC3906Z
PPAK3x3 PACKAGE INFORMATION
Symbol
A
b
c
D
D1
D2
D3
E
E1
E2
e
H
L
L1
θ
M
Potens semiconductor corp.
Dimensions In Millimeters
Min
Max
0.700
0.800
0.250
0.350
0.100
0.250
3.250
3.450
3.000
3.200
1.780
1.980
0.130 REF
3.200
3.400
3.000
3.200
2.390
2.590
0.650 BSC
0.300
0.500
0.300
0.500
0.130 REF
0°
12°
0.150 REF
Dimensions In Inches
Min
Max
0.028
0.031
0.010
0.013
0.004
0.128
0.119
0.070
0.005 REF
0.126
0.119
0.094
0.026 BSC
0.011
0.011
0.005 REF
0°
0.006 REF
Ver.1.00
0.009
0.135
0.125
0.077
0.133
0.125
0.102
0.019
0.019
12°
5
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