20V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
PDC2306Z
BVDSS
20V
Features
20V,65A, RDS(ON) =5.4mΩ @VGS = 4.5V
Green Device Available
RDSON
5.4m
ID
65A
Suit for 1.8V Gate Drive Applications
PPAK3x3 Pin Configuration
D
D
D D
Applications
Load Switch
D
S
S
S
G
G
Absolute Maximum Ratings
Tc=25℃ unless otherwise noted
Symbol
V
DS
V
GS
I
D
Parameter
ar
yd
Parameter
---
---
S
at
as
POL Applications
SMPS 2
nd
SR
Li-Battery Protection
Rating
20
±10
65
41
260
44.6
0.36
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Typ.
Max.
62
2.8
Unit
℃/W
℃/W
Ver.1.00
Drain-Source Voltage
Gate-Source Voltage
Pr
el
im
in
I
DM
P
D
Drain Current – Pulsed
1
Power Dissipation (T
C
=25℃)
T
STG
T
J
Storage Temperature Range
Drain Current – Continuous (T
C
=25℃)
Drain Current – Continuous (T
C
=100℃)
Power Dissipation – Derate above 25℃
Operating Junction Temperature Range
Thermal Characteristics
Symbol
R
θJA
R
θJC
Thermal Resistance Junction to ambient
Thermal Resistance Junction to Case
Potens semiconductor corp.
1
he
et
Improved dv/dt capability
20V N-Channel MOSFETs
Electrical Characteristics
(T
J
=25
℃,
unless otherwise noted)
Off Characteristics
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
DS
=20V , V
GS
=0V , T
J
=25℃
V
DS
=16V , V
GS
=0V , T
J
=125℃
I
GSS
Gate-Source Leakage Current
V
GS
=±10V
, V
DS
=0V
PDC2306Z
Min.
20
---
---
---
---
Typ.
---
0.01
---
---
---
Max.
---
---
1
10
±100
Unit
V
V/℃
uA
uA
nA
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
I
DSS
Drain-Source Leakage Current
On Characteristics
V
GS
=4.5V , I
D
=20A
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=2.5V , I
D
=15A
V
GS
=1.8V , I
D
=10A
V
GS(th)
△V
GS(th)
gfs
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Forward Transconductance
V
GS
=V
DS
, I
D
=250uA
V
DS
=10V , I
S
=5A
at
as
0.3
---
---
---
---
---
---
---
---
---
---
---
---
Conditions
Min.
---
---
---
Dynamic and switching Characteristics
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
Total Gate Charge
2 , 3
Gate-Source Charge
2 , 3
Gate-Drain Charge
2 , 3
Rise Time
2 , 3
Fall Time
2 , 3
Input Capacitance
Turn-On Delay Time
2 , 3
Turn-Off Delay Time
2 , 3
ar
yd
I
D
=1A
V
DS
=10V , V
GS
=4.5V , I
D
=6A
V
DD
=10V , V
GS
=4.5V , R
G
=25
Pr
el
im
in
C
oss
C
rss
Output Capacitance
V
DS
=10V , V
GS
=0V , F=1MHz
Reverse Transfer Capacitance
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
I
S
Parameter
Typ.
---
---
---
Max.
65
130
1
Unit
A
A
V
Continuous Source Current
Pulsed Source Current
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25℃
I
SM
V
SD
Diode Forward Voltage
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%.
3. Essentially independent of operating temperature.
Potens semiconductor corp.
2
he
et
---
---
---
4.5
5.5
6.8
0.6
2
20
5.4
6.8
8.8
1
---
---
V
S
29.8
2.7
9
13.5
29
66.9
19.2
1920
280
180
45
6
14
26
55
127
36
2790
410
270
pF
ns
nC
m
m
m
mV/℃
Ver.1.00
20V N-Channel MOSFETs
PDC2306Z
Normalized On Resistance (m)
I
D
, Continuous Drain Current (A)
Fig.1
Normalized Gate Threshold Voltage (V)
T
C
, Case Temperature (℃)
Continuous Drain Current vs. T
C
Fig.2
T
J
, Junction Temperature (℃)
Normalized RDSON vs. T
J
ar
yd
Fig.4
I
D ,
Continuous Drain Current (A)
Fig.6
3
V
GS
, Gate to Source Voltage (V)
Normalized Thermal Response (R
ΘJC
)
Pr
el
im
in
Fig.3
Square Wave Pulse Duration (s)
Fig.5
Normalized Transient Response
Potens semiconductor corp.
T
J
, Junction Temperature (℃)
Normalized V
th
vs. T
J
at
as
Qg , Gate Charge (nC)
Gate Charge Waveform
V
DS
, Drain to Source Voltage (V)
Maximum Safe Operation Area
Ver.1.00
he
et
20V N-Channel MOSFETs
V
DS
90%
BV
DSS
EAS=
1
L x I
AS2
x
2
PDC2306Z
BV
DSS
BV
DSS
-V
DD
V
DD
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.8
Fig.7
Switching Time Waveform
EAS Waveform
Pr
el
im
in
Potens semiconductor corp.
ar
yd
Ver.1.00
at
as
4
he
et
I
AS
20V N-Channel MOSFETs
PDC2306Z
PPAK3x3 PACKAGE INFORMATION
Symbol
A
Pr
el
im
in
b
c
D
D1
D2
E
E1
E2
e
H
L
L1
θ
0.350
0.250
3.450
3.200
1.850
3.400
3.250
2.600
0.65BSC
0.500
0.500
0.200
12°
Potens semiconductor corp.
ar
yd
Dimensions In Millimeters
MAX
MIN
0.900
0.700
0.240
0.100
3.050
2.900
1.350
3.000
2.900
2.350
0.300
0.300
0.070
0°
5
at
as
Dimensions In Inches
MAX
MIN
0.035
0.028
0.014
0.010
0.136
0.126
0.073
0.134
0.128
0.102
0.026BSC
0.020
0.020
0.008
12°
0.009
0.004
0.120
0.114
0.053
0.118
0.114
0.093
0.012
0.012
0.003
0°
Ver.1.00
he
et
模拟电子
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