PPJA3412
20V N-Channel Enhancement Mode MOSFET
Voltage
Features
20 V
Current
4.1A
SOT-23
Unit: inch(mm)
R
DS(ON)
, V
GS
@4.5V, I
D
@4.1A<56mΩ
R
DS(ON)
, V
GS
@2.5V, I
D
@2.8A<68mΩ
R
DS(ON)
, V
GS
@1.8V, I
D
@1.5A<95mΩ
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC61249 standard
Mechanical Data
Case : SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0003 ounces, 0.0084 grams
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
o
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
a
=25 C
Derate above 25 C
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
-
Junction to Ambient
(Note 3)
o
o
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
LIMIT
UNITS
V
20
+12
4.1
A
16.4
1.25
10
-55~150
100
o
W
mW/ C
o
o
C
C/W
September 15,2017-REV.01
Page 1
PPJA3412
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
tr
td
(off)
tf
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=4.5V, I
D
=4.1A
Drain-Source On-State Resistance
V
GS
=2.5V, I
D
=2.8A
V
GS
=1.8V, I
D
=1.5A
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 5)
o
SYMBOL
TEST CONDITION
MIN.
20
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.66
41
50
66
-
-
4.6
0.8
1
350
40
29
4
47
18
10
MAX.
-
1.2
56
68
95
1
+100
-
-
-
-
-
-
-
-
-
-
UNITS
V
mΩ
V
DS
=20V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
uA
nA
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
V
DS
=10V, I
D
=4.1A,
V
GS
=4.5V
(Note 1,2)
nC
V
DS
=10V, V
GS
=0V,
f=1MHZ
V
DD
=10V, I
D
=4.1A,
V
GS
=4.5V,
R
G
=6Ω
(Note 1,2)
pF
ns
I
S
V
SD
---
I
S
=1A, V
GS
=0V
-
-
-
0.75
1.5
1.2
A
V
NOTES :
1. Pulse width<300us, Duty cycle<2%.
2. Essentially independent of operating temperature typical characteristics.
3.
4.
5.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
The maximum current rating is package limited.
Guaranteed by design, not subject to production testing.
September 15,2017-REV.01
Page 2
PPJA3412
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with V
GS
Fig.6 Body Diode Characteristics
September 15,2017-REV.01
Page 3
PPJA3412
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature
Fig.9 Capacitance vs. Drain-Source Voltage
September 15,2017-REV.01
Page 4
PPJA3412
Part No Packing Code Version
Part No Packing Code
PJA3412_R1_00001
Package Type
SOT-23
Packing Type
3K pcs / 7” reel
Marking
A12
Version
Halogen free
Mounting Pad Layout
September 15,2017-REV.01
Page 5
详细参数
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