PPJA3415
20V P-Channel Enhancement Mode MOSFET
Voltage
Features
-20 V
Current
-4.0A
SOT-23
Unit : inch(mm)
R
DS(ON)
, V
GS
@-4.5V, I
D
@-4.0A<57mΩ
R
DS(ON)
, V
GS
@-2.5V, I
D
@-2.8A<70mΩ
R
DS(ON)
, V
GS
@-1.8V, I
D
@-2.1A<95mΩ
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A15
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
a
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
LIMIT
o
UNITS
V
V
A
A
W
mW/
o
C
o
-20
+12
-4.0
-16
1.25
10
-55~150
100
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
February 17,2014-REV.00
Page 1
PPJA3415
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=-1.0A, V
GS
=0V
-
-
-
0.76
-1.5
-1.2
A
V
td
(on)
tr
td
(off)
tf
V
DD
=-10V, I
D
=-4.0A,
V
GS
=-4.5V,
R
G
=6Ω
(Note 1,2)
-
-
-
-
5
61
70
137
-
-
-
-
ns
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
V
DS
=-10V, I
D
=-4.0A,
V
GS
=-4.5V
(Note 1,2)
V
DS
=-10V, V
GS
=0V,
f=1.0MHZ
-
-
-
-
-
-
18
2
7
756
75
58
-
-
-
-
-
-
pF
nC
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
V
GS
=0V, I
D
=-250uA
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-4.5V, I
D
=-4.0A
V
GS
=-2.5V, I
D
=-2.8A
V
GS
=-1.8V, I
D
=-2.1A
V
DS
=-20V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
-20
-0.4
-
-
-
-
-
-
-0.62
50
59
74
-0.01
+10
-
-1.2
57
70
95
-1
+100
uA
nA
mΩ
V
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. R
ΘJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
February 17,2014-REV.00
Page 2
PPJA3415
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
February 17,2014-REV.00
Page 3
PPJA3415
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Capacitance vs. Drain-Source Voltage.
February 17,2014-REV.00
Page 4
PPJA3415
PART NO PACKING CODE VERSION
Part No Packing Code
PJA3415_R1_00001
PJA3415_R2_00001
Package Type
SOT-23
SOT-23
Packing type
3K pcs / 7” reel
12K pcs / 13” reel
Marking
A15
A15
Version
Halogen free
Halogen free
MOUNTING PAD LAYOUT
February 17,2014-REV.00
Page 5
详细参数
全文预览
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
