PPJD50N10AL
100V N-Channel Enhancement Mode MOSFET
Voltage
Features
100 V
Current
42 A
R
DS(ON) ,
V
GS
@10V, ID@20A<25mΩ
R
DS(ON)
, V
GS
@4.5V, ID@15A<28.5mΩ
Advanced Trench Process Technology
High density cell design for ultra low on-resistance
Lead free in compliance with EU RoHS 2011/65/EU
directive
TO-252AA
Green molding compound as per IEC61249 Std..
(Halogen Free)
Mechanical Data
Case : TO-252AA Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0104 ounces, 0.297grams
o
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Continuous Drain Current
Power Dissipation
Power Dissipation
(Note 1)
SYMBOL
V
DS
V
GS
T
C
=25
o
C
T
C
=100
o
C
T
C
=25
o
C
T
C
=25
o
C
T
C
=100
o
C
T
A
=25
o
C
T
A
=70
o
C
T
A
=25
o
C
T
A
=70
o
C
I
D
I
DM
P
D
I
D
P
D
E
AS
T
J
,T
STG
R
θJC
R
θJA
LIMIT
UNITS
V
V
A
100
+20
42
26
150
83
33
6.3
5.1
2.0
1.3
63.4
-55~150
1.5
62.5
o
W
A
A
W
mJ
o
Single Pulse Avalanche Energy
(Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
(Note 4,5)
C
Junction to Case
Junction to Ambient
C/W
Limited only By Maximum Junction Temperature
July 28,2016-REV.02
Page 1
PPJD50N10AL
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 7)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=1.0A, V
GS
=0V
-
-
-
0.7
42
1.2
A
V
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
t
r
td
(off)
t
f
V
DS
=50V, I
D
=10A,
V
GS
=10V
(Note 1,2)
o
SYMBOL
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
TEST CONDITION
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V,I
D
=20A
V
GS
=4.5V,I
D
=15A
V
DS
=80V,V
GS
=0V
V
GS
=+20V,V
DS
=0V
MIN.
100
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
1.8
20
22
-
-
29
4.5
6.4
1485
135
67
7.8
30
35
14
MAX.
-
2.5
25
28.5
1.0
+100
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
mΩ
uA
nA
nC
V
DS
=30V, V
GS
=0V,
f=1.0MHZ
V
DD
=50V, I
D
=10A,
V
GS
=10V,
R
G
=3Ω
(Note 1,2)
pF
ns
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and duty cycles to keep initial TJ =25°C.
4. The maximum current rating is package limited.
5. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. Mounted on a 1 inch
2
with 2oz.square pad of copper.
6. The test condition is L=3mH, I
AS
=6.5A, V
DD
=25V, V
GS
=10V
7. Guaranteed by design, not subject to production testing.
July 28,2016-REV.02
Page 2
PPJD50N10AL
TYPICAL CHARACTERISTIC CURVES
Fig.1 Output Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Source-Drain Diode Forward Voltage
July 28,2016-REV.02
Page 3
PPJD50N10AL
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature
Fig.10 Capacitance vs. Drain-Source Voltage
Fig.11 Maximum Safe Operating Area
July 28,2016-REV.02
Page 4
PPJD50N10AL
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Transient Thermal Impedance vs. Pulse Width
July 28,2016-REV.02
Page 5
详细参数
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