PPJT7600
20V Complementary Enhancement Mode MOSFET – ESD Protected
Voltage
Features
20 / -20V
Current
1 / -0.7A
SOT-363
Unit: inch(mm)
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected 2KV HBM
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-363 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0002 ounces, 0.006 grams
Marking: T60
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
(Note 4)
o
SYMBOL
V
DS
V
GS
I
D
I
DM
T
a
=25
o
C
Derate above 25
o
C
P
D
T
J
,T
STG
R
θJA
N-Ch LIMIT
P-Ch LIMIT
UNITS
V
V
A
A
mW
mW/
o
C
o
20
+8
1
4
350
2.8
-55~150
357
-20
+8
-0.7
-2.8
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
o
C/W
May 5,2016-REV.03
Page 1
PPJT7600
N-Channel Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
= 1A, V
GS
=0V
-
-
-
0.85
1
1.2
A
V
td
(on)
tr
td
(off)
tf
V
DD
=10V, I
D
=1A,
V
GS
=4.5V, R
G
=6Ω
(Note 1,2)
o
SYMBOL
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
TEST CONDITION
V
GS
=0V, I
D
= 250uA
V
DS
=V
GS
, I
D
= 250uA
V
GS
= 4.5V, I
D
= 1A
V
GS
= 2.5V, I
D
= 0.7A
V
GS
= 1.8V, I
D
= 0.3A
V
DS
= 20V, V
GS
=0V
V
GS
=+8V, V
DS
=0V
MIN.
20
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.8
114
160
280
0.01
+2
1.6
0.3
0.41
92
25
9.1
5.8
25.7
41
31
MAX.
-
1.0
150
215
400
1
+10
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
mΩ
uA
uA
V
DS
=10V, I
D
=1A,
V
GS
=4.5V
(Note 1,2)
V
DS
=10V, V
GS
=0V,
f=1.0MHZ
nC
pF
ns
May 5,2016-REV.03
Page 2
PPJT7600
P-Channel Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=-1A, V
GS
=0V
-
-
-
-0.86
-1
-1.2
A
V
td
(on)
tr
td
(off)
tf
V
DD
=-10V, I
D
=-0.7A,
V
GS
=-4.5V, R
G
=6Ω
(Note 1,2)
o
SYMBOL
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
TEST CONDITION
V
GS
=0V, I
D
= -250uA
V
DS
=V
GS
, I
D
= -250uA
V
GS
= -4.5V, I
D
= -0.7A
V
GS
= -2.5V, I
D
= -0.6A
V
GS
= -1.8V, I
D
= -0.5A
V
DS
=-20V, V
GS
=0V
V
GS
=+8V, V
DS
=0V
MIN.
-20
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-0.64
260
310
400
-0.01
+3.5
2.2
0.4
0.5
151
27
8.8
2.2
19.2
6.2
23
MAX.
-
-1
325
420
600
-1
+10
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
mΩ
uA
uA
V
DS
=-10V, I
D
=-0.7A,
V
GS
=-4.5V
(Note 1,2)
nC
V
DS
=-10V, V
GS
=0V,
f=1.0MHZ
pF
ns
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
May 5,2016-REV.03
Page 3
PPJT7600
N-Channel TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Dlode Characterlslcs
May 5,2016-REV.03
Page 4
PPJT7600
N-Channel TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Capacitance vs. Drain-Source Voltage.
May 5,2016-REV.03
Page 5
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