BC847BPN
DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY)
This device contains two electrically-isolated complimentary pair (NPN and
PNP) general-purpose transistors. This device is ideal for portable
applications where board space is at a premium.
4
SOT- 363
FEATURES
Electrically-Isolated Complimentary Transistor Pairs
Lead free in
compliance with EU RoHS 2.0
Green molding
compound as per IEC 61249 standard
5
6
2
1
3
6
5
4
APPLICATIONS
General Purpose Amplifier Applications
Hand-Held Computers, PDAs
Device Marking Code: 47P
MAXIMUM RATINGS - NPN
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage Voltage
Collector Current
1
2
3
T
J
= 25°C Unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
50
45
6.0
100
Units
V
V
V
mA
MAXIMUM RATINGS - PNP
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage Voltage
Collector Current
T
J
= 25°C Unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-50
-45
-5.0
-100
Units
V
V
V
mA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Ambient (Note 1)
P
D
T
J
T
stg
R
thja
200
-55 to +150
-55 to +150
556
mW
°C
°C
°C/W
Note 1. FR-4 board
70
x
60
x
1mm
with minimum recommended pad layout
February 1,2018-REV.03
Page 1
www.panjit.com
BC847BPN
NPN ELECTRICAL CHARACTERISTICS (Note 2)
Parameter
Symbol
Conditions
Collector-Emitter Breakdown VoltageV
(BR)CEO
I
C
= 10mA
Collector-Emitter Breakdown VoltageV
(BR)CES
I
C
= 10uA, V
EB
= 0
Collector-Base Breakdown Voltage V
(BR)CBO
I
C
= 10uA
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
V
(BR)EBO
I
E
= 1.0uA
I
CBO
I
EBO
h
FE
V
CB
= 30V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 2.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
T
J
=150°C
T
J
= 25°C Unless otherwise noted
Min
45
50
50
6.0
-
-
-
200
-
-
-
0.58
100
-
-
Typ
-
-
-
-
-
-
-
-
-
-
0.75
-
-
-
7
Max
-
-
-
-
15
5
100
450
0.1
0.4
-
0.7
-
1.5
-
Units
V
V
V
V
nA
uA
nA
-
V
V
V
V
MHz
pF
pF
Collector-Emitter Saturation Voltage V
CE(SAT)
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Gain-Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
V
BE(SAT)
I
C
= 10mA, I
B
= 0.5mA
V
BE
f
T
C
CBO
C
EBO
V
CE
= 5V, I
C
= 2.0mA
V
CE
= 5V, I
C
= 10mA
f = 100MHz
V
CB
= 10V, f =1.0MHz
V
EB
= 0.5V, f =1.0MHz
PNP ELECTRICAL CHARACTERISTICS (Note 2)
Parameter
Symbol
Conditions
Collector-Emitter Breakdown VoltageV
(BR)CEO
I
C
= -10mA
Collector-Emitter Breakdown VoltageV
(BR)CES
I
C
= -10uA, V
EB
= 0
Collector-Base Breakdown Voltage V
(BR)CBO
I
C
= -10uA
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
V
(BR)EBO
I
E
= -1.0uA
I
CBO
I
EBO
h
FE
V
CB
= -30V, I
E
= 0
V
EB
= -5V, I
C
= 0
V
CE
= -5V, I
C
= -2.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
T = 25°C Unless otherwise noted
J
Min
-45
-50
-50
-5.0
-
Typ
-
-
-
-
-
-
-
-
-
-
-0.7
-
-
-
11
Max
-
-
-
-
-15
-4.0
-100
475
-0.3
-0.65
-
-0.75
-
4.5
-
Units
V
V
V
V
nA
uA
nA
V
V
V
V
MHz
pF
pF
T
J
=150°C
-
-
200
-
-
-
-0.6
100
-
-
Collector-Emitter Saturation Voltage V
CE(SAT)
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Gain-Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
V
BE(SAT)
I
C
= -10mA, I
B
= -0.5mA
V
BE
f
T
C
CBO
C
EBO
V
CE
= -5V, I
C
= -2.0mA
V
CE
= -5V, I
C
= -10mA
f = 100MHz
V
CB
= -10V, f =1.0MHz
V
EB
= -0.5V, f =1.0MHz
Note 2. Short duration test pulse used to minimize self-heating
February 1,2018-REV.03
Page 2
www.panjit.com
BC847BPN
ELECTRICA5L CHARACTERISTICS CURVE
100
V
CB
=30V
10
hF
E
500
450
400
350
300
250
200
150
100
50
T
J
=25 °C
T
J
=100° C
T
J
=150° C
V
CE
=5V
I
CB0
, Collector Current (nA)
1
0
25
50
75
100
125
150
Junction Temperature, T
J
(
O
C)
0
0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
Fig. 1. Typical I
CB0
vs. Junction Temperature
1200
1000
800
V
BE(ON)
(mV)
,
600
400
200
0
0.01
V
CE
=5V
T
J
= 25 °C
V
CE(sat)
(mV)
,
1000
Fig. 2. Typical h
FE
vs. Collector Current
T
J
= 100 °C
T
J
= 100 °C
100
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
I
C
/I
B
=20
0.1
1
10
100
1000
10
0.01
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 3. Typical V
BE(ON)
vs. Collector Current
1200
Fig. 4. Typical V
CE(SAT)
vs. Collector Current
10
C
ib (EB)
1000
T
J
= 25 °C
800
T
J
= 100 °C
T
J
= 25 °C
600
Capacitance, C (pF
)
V
BE(sat)
(mV)
,
C
ob (CB)
400
I
C
/I
B
=20
200
T
J
= 150 °C
0
0.01
1
0.1
1
10
100
0.1
1
10
100
Collector Current, I
C
(mA)
Reverse Voltage (V)
Fig. 5. Typical V
BE(SAT)
vs. Collector Current
Fig. 6. Typical Capacitances vs. Reverse Voltage
February 1,2018-REV.03
Page 3
www.panjit.com
BC847BPN
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
SOT-363
Unit
：
inch(mm)
0.087(2.20)
0.074(1.90)
0.010(0.25)
0.054(1.35)
0.045(1.15)
0.030(0.75)
0.021(0.55)
0.056(1.40)
0.047(1.20)
0.010(0.25)
0.003(0.08)
0.004(0.10)
0.000(0.00)
0.012(0.30)
0.005(0.15)
ORDERING INFORMATION
BC847BPN T/R7 - 3,000 units per 7 inch reel
BC847BPN T/R13 -10,000 units per 13 inch reel
February 1,2018-REV.03
Page
4
www.panjit.com
BC847BPN
Part No_packing code_Version
BC847BPN_R1_00001
BC847BPN_R2_00001
For example :
RB500V-40_R2_00001
Serial number
Part No.
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing Code
XX
Packing type
Tape and Ammunition Box
(T/B)
Tape and Reel
(T/R)
Bulk Packing
(B/P)
Tube Packing
(T/P)
Tape and Reel (Right Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
FORMING
1
st
Code
A
R
B
T
S
L
F
Packing size code
N/A
7"
13"
26mm
52mm
PANASERT T/B CATHODE UP
(PBCU)
PANASERT T/B CATHODE DOWN
(PBCD)
Version Code
XXXXX
2
nd
Code
HF or RoHS
1
st
Code 2
nd
~5
th
Code
0
1
2
X
Y
U
D
HF
RoHS
0
1
serial number
serial number
February 1,2018-REV.03
PAGE .
5
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