PPJQ5494
150V N-Channel Enhancement Mode MOSFET
Voltage
Features
150 V
Current
40A
DFN5060-8L
R
DS(ON)
, V
GS
@10V, I
D
@20A<35mΩ
High switching speed
Improved dv/dt capability
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case: DFN5060-8L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0028 ounces, 0.08 grams
o
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Continuous Drain Current
Power Dissipation
Power Dissipation
(Note 1)
SYMBOL
V
DS
V
GS
LIMIT
UNITS
V
150
+20
40
25
120
131
52
5.0
4.0
2.0
1.3
31.5
-55~150
0.95
62.5
o
T
C
=25
o
C
T
C
=100
o
C
T
C
=25 C
T
C
=25
o
C
T
C
=100
o
C
T
A
=25
o
C
T
A
=70
o
C
T
A
=25
o
C
T
A
=70
o
C
o
I
D
I
DM
P
D
I
D
P
D
E
AS
T
J
,T
STG
R
θJC
R
θJA
A
W
A
W
mJ
o
Single Pulse Avalanche Energy
(Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
(Note 4,5)
C
Junction to Case
Junction to Ambient
C/W
Limited only By Maximum Junction Temperature
March 27,2018-REV.01
Page 1
PPJQ5494
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 7)
o
SYMBOL
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
t
r
td
(off)
t
f
TEST CONDITION
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
=20A
V
DS
=120V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
MIN.
150
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
3.0
30
-
-
52
10
19
2207
136
58
17
100
35
106
MAX.
-
4.0
35
1.0
+100
-
-
-
-
-
-
-
-
-
-
UNITS
V
mΩ
uA
nA
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
V
DS
=120V, I
D
=30A,
V
GS
=10V
(Note 1,2)
V
DS
=75V, V
GS
=0V,
f=1.0MHZ
V
DS
=75V, RL=1.7Ω,
V
GS
=10V, R
G
=25Ω
(Note 1,2)
nC
pF
ns
I
S
V
SD
---
I
S
=1A,V
GS
=0V
-
-
-
0.7
40
1.3
A
V
NOTES :
1. Pulse width<300us, Duty cycle<2%.
2. Essentially independent of operating temperature typical characteristics.
3. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and
duty cycles to keep initial T
J
=25°C.
4. The maximum current rating is package limited.
5. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. Mounted on a 1 inch
2
with 2oz.square pad of copper.
6. The test condition is L=0.1mH, I
AS
=38A, V
DD
=25V, V
GS
=10V, Starting T
J
=25
o
C.
7. Guaranteed by design, not subject to production testing.
March 27,2018-REV.01
Page 2
PPJQ5494
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with V
GS
Fig.6 Body Diode Characteristics
March 27,2018-REV.01
Page 3
PPJQ5494
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature
Fig.10 Capacitance vs. Drain-Source Voltage
Fig.11 Maximum Safe Operating Area
Fig.12 Normalized Transient Thermal Impedance
March 27,2018-REV.01
Page 4
PPJQ5494
Part No Packing Code Version
Part No Packing Code
PJQ5494_R2_00001
Package Type
DFN5060-8L
Packing Type
3000pcs / 13” reel
Marking
Q5494
Version
Halogen free
Packaging Information & Mounting Pad Layout
DFN5060-8L Dimension
Unit: inch(mm)
DFN5060-8L Pad Layout
Unit: inch(mm)
March 27,2018-REV.01
Page 5
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