MMDT3946
COMPLEMENTARY NPN/PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
• Epitaxial silicon, planar design
• Collector-emitter voltage V
CE
= 40V
• Collector current Ic = 200mA
• Transition Frequency> 300MHz f
T
@I
C
=10mA,V
CE
=20V,
f=100MHz
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound as per IEC61249 Std. .
(Halogen Free)
40 Volt
POWER
225 mWatt
MECHANICAL DATA
• Case: SOT-363, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0002 ounces, 0.006 grams
• Marking: S3A
ABSOLUTE RATINGS
ABSOLUTE RATING
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
SYMBOL
V
CEO
V
CBO
V
EBO
I
NPN 3904 SECTION
VALUE
40
60
6
200
PNP 3906 SECTION
VALUE
-40
-40
-5
-200
-
UNITS
V
V
V
mA
C
THERMAL CHARACTERISTICS
PARAMETER
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature
SYMBOL
P
TOT
R
θJA
T
J
T
STG
VALUE
225
625
-55 to 150
-55 to 150
UNITS
mW
O
C/W
O
C
C
O
Note 1: Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in.
May 26,2016REV.04
PAGE . 1
MMDT3946
ELECTRICAL CHARACTERISTICS NPN SECTION
PA RA M E TE R
C o lle c to r - E m i tte r B r e a k d o wn Vo lta g e
C o lle c to r - B a s e B re a k d o wn Vo lta g e
E m i tte r - B a s e B re a k d o wn Vo lta g e
B a s e C uto ff C ur r e nt
C o lle c to r C uto ff C urr e nt
I
S YMB OL
V
(B R) C E O
V
(B R) C B O
V
(B R)E B O
I
TE S T C OND ITION
I
C
= 1 .0 m A , I
B
=0
I
C
= 1 0 uA , I
E
=0
I
E
= 1 0 uA , I
C
=0
V
C E
= 3 0 V, V
E B
=3 .0 V
V
C E
= 3 0 V, V
E B
=3 .0 V
I
I
I
I
I
= 0 .1 m A , V
C E
=1 .0 V
= 1 .0 m A , V
C E
=1 .0 V
= 1 0 m A , V
C E
=1 .0 V
C
= 5 0 m A , V
C E
=1 .0 V
C
= 1 0 0 m A , V
C E
= 1 .0 V
C
C
C
MIN.
40
60
6 .0
-
-
40
70
100
60
30
-
0 .6 5
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MA X.
-
-
-
50
50
-
-
300
-
-
0 .2
0 .3
0 .8 5
0 .9 5
4 .0
8 .0
35
35
200
50
UNITS
V
V
V
nA
nA
Bl
CEX
D C C urr e nt Ga i n (No te 2 )
h
FE
-
C o lle c to r - E m i tte r S a tur a ti o n Vo lta g e
( No te 2 )
B a s e - E m i tte r S a tura ti o n Vo lta g e
( No te 2 )
C o lle c to r - B a s e C a p a c i ta nc e
E m i tte r - B a s e C a p a c i ta nc e
D e la y Ti m e
Ri s e Ti m e
S to ra g e Ti m e
F a ll Ti m e
V
C E (S AT)
V
B E (S AT)
C
C BO
C
EBO
td
tr
ts
tf
I
C
= 1 0 m A , I
B
=1 .0 m A
I
C
= 5 0 m A , I
B
=5 .0 m A
I
C
= 1 0 m A , I
B
=1 .0 m A
I
C
= 5 0 m A , I
B
=5 .0 m A
V
C B
= 5 V, I
E
=0 , f= 1 MHz
V
C B
= 0 .5 V, I
C
= 0 , f= 1 M Hz
V
C C
= 3 V,V
B E
= -0 .5 V,
I
C
= 1 0 m A ,I
B
=1 .0 m A
V
C C
= 3 V,V
B E
= -0 .5 V,
I
C
= 1 0 m A ,I
B
=1 .0 m A
V
C C
= 3 V,I
C
= 1 0 m A
I
B 1
= I
B 2
= 1 .0 m A
V
C C
= 3 V,I
C
= 1 0 m A
I
B 1
= I
B 2
= 1 .0 m A
V
V
pF
pF
ns
ns
ns
ns
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
May 26,2016REV.04
PAGE . 2
MMDT3946
ELECTRICAL CHARACTERISTICS PNP SECTION
PA RA M E TE R
C o lle c to r - E mi tte r B re a k d o wn Vo lta g e
C o lle c to r - B a s e B re a k d o wn Vo lta g e
E mi tte r - B a s e B re a k d o wn Vo lta g e
B a s e C uto ff C ur re nt
C o lle c to r C uto ff C urr e nt
S YMB OL
V
(B R)C E O
V
(B R)C B O
V
(B R)E B O
I
B l
I
C E X
TE S T C OND ITION
I
C
=- 1 .0 mA , I
B
= 0
I
C
=- 1 0 uA , I
E
=0
I
E
=- 1 0 uA , I
C
=0
V
C E
= -3 0 V, V
E B
= -3 .0 V
V
C E
= -3 0 V, V
E B
= -3 .0 V
I
C
=- 0 .1 mA , V
C E
=-1 .0 V
I
C
=- 1 .0 mA , V
C E
=-1 .0 V
I
C
=- 1 0 m A , V
C E
=-1 .0 V
I
C
=- 5 0 m A , V
C E
=-1 .0 V
I
C
=- 1 0 0 mA , V
C E
=- 1 .0 V
I
C
=- 1 0 m A , I
B
=-1 .0 mA
I
C
=- 5 0 m A , I
B
=-5 .0 mA
I
C
=- 1 0 m A , I
B
=-1 .0 mA
I
C
=- 5 0 m A , I
B
=-5 .0 mA
V
C B
= -5 V, I
E
=0 , f=1 M Hz
V
C B
= -0 .5 V, I
C
=0 , f= 1 MHz
V
C C
= -3 V,V
B E
=-0 .5 V,
I
C
=- 1 0 m A ,I
B
=- 1 .0 mA
V
C C
= -3 V,V
B E
=-0 .5 V,
I
C
=- 1 0 m A ,I
B
=- 1 .0 mA
V
C C
= -3 V,I
C
=-1 0 mA
I
B 1
=I
B 2
=- 1 .0 mA
V
C C
= -3 V,I
C
=-1 0 mA
I
B 1
=I
B 2
=1 .0 mA
MIN.
-4 0
-4 0
- 5 .0
-
-
60
80
100
60
30
-
- 0 .6 5
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MA X .
-
-
-
-5 0
-5 0
-
-
300
-
-
-0 .2 5
-0 .4
-0 .8 5
-0 .9 5
4 .0
10
35
35
225
75
UNITS
V
V
V
nA
nA
D C C urre nt Ga i n (No te 2 )
h
F E
-
C o lle c to r - E mi tte r S a tura ti o n Vo lta g e
(No te 2 )
B a s e - E m i tte r S a tura ti o n Vo lta g e
(No te 2 )
C o lle c to r - B a s e C a p a c i ta nc e
E mi tte r - B a s e C a p a c i ta nc e
D e la y Ti me
Ri s e Ti m e
S to r a g e Ti m e
F a ll Ti me
V
C E (S AT)
V
B E (S AT)
C
CBO
C
EBO
td
tr
ts
tf
V
V
pF
pF
ns
ns
ns
ns
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+3V
275
Ω
+0.5V
0
< 1ns
300
ns
- 10.9V
10K
Ω
C S
* < 4
pF
D elay and R ise Tim e Equivalent Test C ircuit
+3V
275
Ω
< 1ns
+9.1V
0
10
to
500us
Duty Cyc e ~2.0%
- 10.9V
10K
Ω
1
N9
1 6
C S
* < 4
pF
Storage and Fall Tim e Equivalent Test Circuit
May 26,2016REV.04
PAGE . 3
MMDT3946
ELECTRICAL CHARACTERISTICS CURVE NPN SECTION
300
250
200
1.400
T
J
=150 C
o
V
CE
=1V
1.200
1.000
T
J
=100
o
C
V
BE
(V)
h
FE
0.800
0.600
0.400
T
J
=100
o
C
T
J
=25 C
o
150
100
50
0
0.01
0.1
T
J
=25 C
o
0.200
1
10
100
1000
0.000
0.01
T
J
=150
o
C
V
CE
=1V
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 2. Typical VBE vs. Collector Current
Fig. 1. Typical h
FE
vs. Collector Current
1.000
1.0
T
J
=25 C
o
I
C
/ I
B
=10
V
CE
(sat)(mV)
T
J
=150
o
C
V
BE
(sat) (V)
T
J
=100
o
C
0.100
T
J
=25
o
C
T
J
=150 C
o
I
C
/ I
B
=10
0.010
0.01
0.1
1
10
100
1000
0.1
0.01
0.1
1.0
10
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 3. Typical V
CE (sat)
vs. Collector Current
Fig. 4. Typical V
BE(sat)
vs Collector Current
10
C
IB
(EB)
T
J
=150
o
C
Capacitance (pF)
C
OB
(CB)
1
0.1
1
10
100
Reverse Voltage, V
R
(V)
Fig. 5. Typical Capacitances vs. Reverse Voltage
May 26,2016REV.04
PAGE . 4
MMDT3946
ELECTRICAL CHARACTERISTICS CURVE PNP SECTION
300
250
200
T
J
=150
o
C
1.2
V
CE
=1V
V
CE
=1V
1.0
0.8
-V
BE
(V)
T
J
=100 C
o
T
J
=25 C
o
h
FE
150
T
J
=25 C
o
0.6
T
J
=100
o
C
T
J
=150 C
o
100
50
0
0.01
0.4
0.2
0.0
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
Collector Current, -I
C
(mA)
Collector Current, -I
C
(mA)
Fig. 1. Typical h
FE
vs Collector Current
Fig. 2. Typical V
BE
vs Collector Current
1.00
1.000
I
C
/ I
B
=10
-V
CE
(sat) (V)
-V
BE
(sat) (V)
T
J
=25 C
o
T
J
=100
o
C
T
J
=150 C
o
0.10
T
J
=150 C
o
T
J
=25 C
o
I
C
/ I
B
=10
0.01
0.01
0.1
1
10
100
1000
0.100
0.01
0.1
1
10
100
Collector Current, -I
C
(mA)
Collector Current, -I
C
(mA)
Fig. 4. Typical V
BE (sat)
vs Collector Current
Fig. 3. Typical V
CE (sat)
vs Collector Current
10
Capacitance (pF)
C
IB
(EB)
C
OB
(CB)
1
-0.1
-1
-10
-100
Reverse Voltage, V
R
(V)
Fig. 5. Typical Capacitances vs Reverse Voltage
May 26,2016REV.04
PAGE . 5
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