1. FEATURES ........................................................................................................................................................ 4
2. GENERAL DESCRIPTION ............................................................................................................................... 6
6. DATA PROTECTION.......................................................................................................................................... 9
Table 2. Protected Area Sizes ..............................................................................................................10
9. HOLD FEATURE.............................................................................................................................................. 14
10-18. Page Program (PP) .............................................................................................................................40
10-19. 4 x I/O Page Program (4PP) ................................................................................................................41
10-20. Continuous Program mode (CP mode)................................................................................................44
10-21. Deep Power-down (DP) .......................................................................................................................46
10-22. Release from Deep Power-down (RDP), Read Electronic Signature (RES) .......................................47
10-23. Read Electronic Manufacturer ID & Device ID (REMS), (REMS2), (REMS4) .....................................49
10-24. ID Read ................................................................................................................................................50
11. POWER-ON STATE ....................................................................................................................................... 69
13-1. Initial Delivery State .............................................................................................................................77
15. ERASE AND PROGRAMMING PERFORMANCE ........................................................................................ 80
16. DATA RETENTION ........................................................................................................................................ 80
18. ORDERING INFORMATION .......................................................................................................................... 81
19. PART NAME DESCRIPTION ......................................................................................................................... 82
20. PACKAGE INFORMATION ............................................................................................................................ 83
21. REVISION HISTORY ..................................................................................................................................... 88
10-28.
10-29.
10-30.
10-31.
10-32.
10-33.
10-34.
10-35.
10-36.
10-37.
P/N: PM1784
3
REV. 1.4, NOV. 05, 2013
MX25L6435E
64M-BIT [x 1/x 2/x 4] CMOS MXSMIO
®
(SERIAL MULTI I/O) FLASH MEMORY
1. FEATURES
GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
•
67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two I/O mode) structure or 16,777,216 x 4 bits (four I/O
mode) structure
• 2048 Equal Sectors with 4K bytes each
- Any Sector can be erased individually
• 256 Equal Blocks with 32K bytes each
- Any Block can be erased individually
• 128 Equal Blocks with 64K bytes each
- Any Block can be erased individually
• Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
• High Performance
VCC = 2.7~3.6V
- Normal read
- 50MHz
- Fast read
- 1 I/O: 104MHz with 8 dummy cycles
- 2 I/O: 86MHz with 4 dummy cycles for 2READ instruction
- 4 I/O: Up to 104MHz
- Configurable dummy cycle number for 4 I/O read operation
- Fast program time: 0.7ms(typ.) and 3ms(max.)/page (256-byte per page)
- Byte program time: 12us (typical)
- Continuous Program mode (automatically increase address under word program mode)
- Fast erase time: 30ms (typ.)/sector (4K-byte per sector) ; 0.25s(typ.) /block (64K-byte per block); 20s(typ.) /
chip
• Low Power Consumption
- Low active read current: 19mA(max.) at 104MHz, 10mA(max.) at 33MHz
- Low active programming current: 15mA (typ.)
- Low active sector erase current: 10mA (typ.)
- Low standby current: 15uA (typ.)
- Deep power down current: 1uA (typ.)
• Typical 100,000 erase/program cycles
• 20 years data retention
P/N: PM1784
4
REV. 1.4, NOV. 05, 2013
MX25L6435E
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Advanced Security Features
- BP0-BP3 block group protect
- Flexible individual block protect when OTP WPSEL=1
- Additional 4K bits secured OTP for unique identifier
• Auto Erase and Auto Program Algorithms
-
Automatically erases and verifies data at selected sector
-
Automatically programs and verifies data at selected page by an internal algorithm that automatically times
the program pulse width (Any page to be programmed should have page in the erased state first.)
•
Status Register Feature
•
Electronic Identification
-
JEDEC 1-byte Manufacturer ID and 2-byte Device ID
- RES command for 1-byte Device ID
- The REMS,REMS2, REMS4 commands for 1-byte Manufacturer ID and 1-byte Device ID
•
Support Serial Flash Discoverable Parameters (SFDP) mode
HARDWARE FEATURES
•
SCLK Input
-
Serial clock input
• SI/SIO0
-
Serial Data Input or Serial Data Input/Output for 2 x I/O mode and 4 x I/O mode
• SO/SIO1
-
Serial Data Output or Serial Data Input/Output for 2 x I/O mode and 4 x I/O mode
• WP#/SIO2
-
Hardware write protection or serial data Input/Output for 4 x I/O mode
• HOLD#/SIO3
-
To pause the device without deselecting the device or serial data Input/Output for 4 x I/O mode
PCB设计
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